Silicon/silicon carbide composite and process for manufacturing the same
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0023799
(2001-12-21)
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우선권정보 |
JP-0398035 (2000-12-27); JP-0084902 (2001-03-23) |
발명자
/ 주소 |
- Horiuchi, Yushi
- Yamaguchi, Masahiro
- Li, Jianhui
|
출원인 / 주소 |
- Toshiba Ceramics Co., Ltd.
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
5 인용 특허 :
3 |
초록
▼
The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer or the like and
The present invention provides a silicon/silicon carbide composite and having a high quality in avoiding warp or breakage and in a corrosion resistance, a durability, a heat shock resistance and particularly suitable used for semiconductor heat treatment member such as a dummy wafer or the like and a process for manufacturing a high purity silicon/silicon carbide composite containing a limited amount of carbon left without reaction. The present invention uses a silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % silicon carbide, said silicon carbide being formed from an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm. The present invention is directed to a process for manufacturing a silicon/silicon carbide composite which comprises a first step where cellulose fibers with a fiber thickness of 150 μm or less is heated at a temperature of 500° C. to 1500° C. in a non-oxidizing atmosphere to produce a porous carbon body with a bulk density of 0.10 to 0.80 g/cm3 and a second step where said porous carbon body is silicification in an atmosphere containing silicon.
대표청구항
▼
1. A silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % of silicon carbide, said silicon carbide consisting essentially of an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm, said composite having a surface on
1. A silicon/silicon carbide composite comprised of 45 to 75 weight % of silicon and 25 to 55 weight % of silicon carbide, said silicon carbide consisting essentially of an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm, said composite having a surface on which a silicon carbide film having a thickness of 30 to 500 μm is formed.2. A silicon/silicon carbide composite according to claim 1, wherein said silicon/silicon carbide composite contains carbon left without reaction therein in an amount of 0.25% by weight or less.3. A silicon/silicon carbide composite according to claim 1, wherein said silicon/silicon carbide composite contains the silicon carbide film having a thickness of 30 to 150 μm to form a dummy wafer having a total thickness of 0.5 mm to 1 mm.4. A silicon/silicon carbide composite according to claim 1, wherein said silicon/silicon carbide composite is a semiconductor heat treatment member.5. A silicon/silicon carbide composite consisting essentially of 45 to 75% by weight of silicon and 25 to 55% by weight of silicon carbide, said silicon carbide consisting essentially of an assembly of fibers each having a thickness of 150 μm or less and a length of 0.8 to 3.5 mm, said composite having a surface on which a silicon carbide film having a thickness of 30 to 500 μm is formed.6. A silicon/silicon carbide composite according to claim 5, wherein said silicon/silicon carbide composite is a dummy wafer with the silicon carbide film having a thickness of 30 to 150 μm formed on the surface thereof, said dummy wafer having a total thickness of 0.5 to 1 mm.7. A silicon/silicon carbide composite according to claim 5, wherein said silicon/silicon carbide composite is a semiconductor heat treatment member.8. A silicon/silicon carbide composite according to claim 5, wherein said silicon/silicon carbide composite contains carbon left without reaction therein in an amount of 0.25% by weight or less.9. A process for manufacturing a silicon/silicon carbide composite comprising a first step in which cellulose fibers each having a fiber thickness of 150 μm or less are heated at a temperature of 500° C. to 1500° C. in a non-oxidizing atmosphere to obtain a porous carbon body having a bulk density of 0.10 to 0.80 g/cm3;and a second step in which said porous carbon body is silicified in an atmosphere containing silicon. 10. A process for manufacturing a silicon/silicon carbide composite according to claim 9, wherein said thickness of each cellulose fiber is within a range of 5 to 80 μm.11. A process for manufacturing a silicon/silicon carbide composite according to claim 9 or 10, wherein the length of each cellulose fiber is 1.5mm or more.12. A process for manufacturing a silicon/silicon carbide composite according to claim 9, wherein said cellulose fiber is paper pulp.13. A process of manufacturing a silicon/silicon carbide composite according to claim 11, wherein said cellulose fiber is paper pulp.14. A process for manufacturing a silicon/silicon carbide composite according to claim 9, wherein the bulk density of the porous carbon body produced by said first step is 0.70 g/cm3 or less.15. A process for manufacturing a silicon/silicon carbide composite according to claim 9, in which a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.16. A process for manufacturing a silicon/silicon carbide composite according to claim 11, wherein a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.17. A process for manufacturing a silicon/silicon carbide composite according to claim 14, wherein a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.18. A process for manufacturing a silicon/silicon carbide composite according to claim 9, wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.19. A process for manufacturing a silicon/silicon carbide composite according to claim 11, wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.20. A process for manufacturing a silicon/silicon carbide composite according to claim 15, wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.21. A process for manufacturing a silicon/silicon carbide composite according to claim 10, wherein the length of each cellulose fiber is 1.5 mm or more.22. A process for manufacturing a silicon/silicon carbide composite according to claim 10, wherein said cellulose fiber is paper pulp.23. A process for manufacturing a silicon/silicon carbide composite according to claim 10, wherein the bulk density of the porous carbon body produced by said first step is 0.70 g/cm3 or less.24. A process for manufacturing a silicon/silicon carbide composite according to claim 13, wherein the bulk density of the porous carbon body produced by said first step is 0.70 g/cm3 or less.25. A process for manufacturing a silicon/silicon carbide composite according to claim 10, in which a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.26. A process for manufacturing a silicon/silicon carbide composite according to claim 13, in which a silicification treatment in said second step is conducted by either a reaction with fused silicon or a reaction with silicon monoxide gas.27. A process for manufacturing a silicon/silicon carbide composite according to claim 10, wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.28. A process for manufacturing a silicon/silicon carbide composite according to claim 13, wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.29. A process for manufacturing a silicon/silicon carbide composite according to claim 16, wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.30. A process for manufacturing a silicon/silicon carbide composite according to claim 17, wherein the porous carbon body produced by said first step is heated at a temperature of 1100° C. to 2000° C. in an atmosphere of halogen gas to be purified prior to the second step.
이 특허에 인용된 특허 (3)
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Steibel James D. ; Corman Gregory S. ; Schikner Robert C. ; Szweda Andrew, Article and method for making complex shaped preform and silicon carbide composite by melt infiltration.
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Nagle Dennis C. ; Byrne Christopher E., Carbonized wood and materials formed therefrom.
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Tani, Eiji, Process for producing fiber-reinforced silicon carbide composites.
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Quantrille, Thomas E.; Rogers, William M., Composite materials and devices comprising single crystal silicon carbide heated by electromagnetic radiation.
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Angier,Derek J.; Rhodes,James F.; Rogers,William M., Process for producing silicon carbide fibers essentially devoid of whiskers.
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Angier,Derek J.; Rhodes,James F.; Rogers,William M., Silicon carbide fibers essentially devoid of whiskers and products made therefrom.
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