초록 ▼

An integrated circuit for wireless communications includes substrate, at least one integrated antenna formed in or on the substrate, and a heat sink. At least one dielectric propagating layer is disposed between the integrated antenna and the heat sink which provides a thermal conductivity of at lea

An integrated circuit for wireless communications includes substrate, at least one integrated antenna formed in or on the substrate, and a heat sink. At least one dielectric propagating layer is disposed between the integrated antenna and the heat sink which provides a thermal conductivity of at least 35 W/m·K and resistivity greater than 100 Ohm-cm at 25 C. The invention can be used to establish an on-chip or inter-chip wireless link over at least a 2.2 cm distance.

대표청구항 ▼

1. An integrated circuit adapted for wireless communications, comprising:a monolithic substrate including at least one integrated electronic device; at least one integrated antenna formed in or on said substrate; a heat sink, and at least one dielectric propagating layer disposed between said integr

1. An integrated circuit adapted for wireless communications, comprising:a monolithic substrate including at least one integrated electronic device; at least one integrated antenna formed in or on said substrate; a heat sink, and at least one dielectric propagating layer disposed between said integrated antenna and said heat sink, said propagating layer providing a bulk thermal conductivity of at least 35 W/m·K and a resistivity of at least 100 Ohm-cm at 25 C. 2. The integrated circuit of claim 1, wherein said dielectric propagating layer is an insert layer comprising a material distinct from said substrate.3. The integrated circuit of claim 2, wherein said insert layer comprises at least one material selected from the group consisting of aluminum nitride (AlN), sapphire and diamond.4. The integrated circuit of claim 2, wherein a thickness of said insert layer is between 0.01 to 1 mm.5. The integrated circuit of claim 1, wherein said circuit provides wireless communications over a distance of at least 1.0 cm.6. The integrated circuit of claim 1, wherein said circuit provides wireless communications over a distance of at least 2.0 cm.7. The integrated circuit of claim 1, wherein said monolithic substrate provides said dielectric propagating layer.8. The integrated circuit of claim 7, wherein said monolithic substrate comprises silicon.9. The integrated circuit of claim 8, wherein said silicon substrate provides a resistivity of at least 100 Ohm-cm.10. The integrated circuit of claim 2, wherein said insert layer is in intimate contact with said monolithic substrate.11. The integrated circuit of claim 1, wherein said at least one integrated electronic device comprises at least a first and second integrated electronic device, said first and second integrated electronic devices each including said integrated antennas, said electronic devices communicating on-chip between one another over the air.12. The integrated circuit of claim 11, wherein said dielectric propagating layer is an insert layer comprising material distinct from said substrate.13. The integrated circuit of claim 12, wherein said insert layer comprising at least one selected from the group consisting of aluminum nitride (AIN), sapphire and diamond.14. The integrated circuit of claim 13, wherein a thickness of said insert layer is between 0.01 to 1 mm.15. The integrated circuit of claim 11, wherein said circuit provides on-chip wireless communications over a distance of at least 1.0 cm.16. The integrated circuit of claim 11, wherein said circuit provides on-chip wireless communications over a distance of at least 2.0 cm.17. The integrated circuit of claim 11, wherein at least one of said first and second integrated electronic devices comprises a microprocessor.