초록 ▼

The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen perox

The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

대표청구항 ▼

1. A method for cleaning semiconductor articles, comprising the steps of:placing one or more articles into a chamber; rotating the articles within the chamber; applying a heated liquid comprising water onto the rotating articles; introducing ozone gas and carbon dioxide gas into the chamber, with th

1. A method for cleaning semiconductor articles, comprising the steps of:placing one or more articles into a chamber; rotating the articles within the chamber; applying a heated liquid comprising water onto the rotating articles; introducing ozone gas and carbon dioxide gas into the chamber, with the ozone oxidizing contaminants on the articles, to clean the articles. 2. The method of claim 1 wherein the liquid is heated to 50-200 C.3. The method of claim 1 wherein the liquid is heated to 75-150 C.4. The method of claim 1 wherein the liquid includes an acid.5. The method of claim 1 further including the step of rinsing the articles.6. The method of claim 5 further including the step of drying the articles.7. The method of claim 6 further including the step of drying the articles using isopropyl alcohol.8. The method of claim 1 wherein at least some of the ozone is entrained in the liquid, before the liquid is applied to the articles.9. The method of claim 1 wherein the heated liquid is sprayed onto the articles.10. The method of claim 1 wherein the articles comprise semiconductor material wafers.11. The method of claim 1 wherein the liquid includes hydrogen peroxide.12. A method for cleaning a wafer, comprising the steps of:rotating the wafer; applying a liquid comprising water onto the rotating wafer, with the liquid heated to 50-200 C; supplying ozone gas and carbon dioxide gas to the wafer, with the ozone oxidizing contaminants on the wafer, to clean the wafer. 13. The method of claim 12 wherein at least some of the ozone is entrained in the liquid, before the liquid is applied to the articles.14. The method of claim 12 further including the step of placing the wafer into a chamber, and wherein the ozone gas is mixed with the carbon dioxide gas before the gases are supplied to the wafer in the chamber.15. The method of claim 12 wherein the heated liquid is sprayed onto the rotating wafer.16. A method for cleaning semiconductor wafers, comprising the steps of:placing the wafers into a chamber; rotating the wafers; applying a liquid including water heated to 50-200 C generally uniformly onto the wafers; providing ozone gas and carbon dioxide gas into the chamber, with the ozone oxidizing contaminants on the surface of the article. 17. The method of claim 16 with the some of the ozone gas entrained into the liquid, before the liquid is applied to the wafers.18. The method of claim 16 further including the step of applying the liquid by spraying.