In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-01652
G01B-01106
H01L-021304
B24B-02704
출원번호
US-0909766
(2001-07-19)
발명자
/ 주소
Tang, Wallace T. Y.
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Fish &
인용정보
피인용 횟수 :
4인용 특허 :
65
초록▼
A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitor
A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.
대표청구항▼
1. An apparatus for chemical mechanical polishing of a wafer, comprising:(a) a platen supporting a polishing surface; (b) a chuck to hold the wafer against the polishing surface; (c) a motor coupled to at least one of the polishing surface and the chuck to generate relative motion therebetween; and
1. An apparatus for chemical mechanical polishing of a wafer, comprising:(a) a platen supporting a polishing surface; (b) a chuck to hold the wafer against the polishing surface; (c) a motor coupled to at least one of the polishing surface and the chuck to generate relative motion therebetween; and (d) an endpoint detector, comprising (c1) a light source operable to generate a light beam that is directed through the polishing surface to the wafer and produce, from the light beam that is directed through the polishing surface, a light beam reflected from the wafer, and (c2) a receiver operable to receive the light beam reflected from the wafer, wherein the endpoint detector is operable to determine, based on the light beam reflected from the wafer, when an end point is reached. 2. The apparatus of claim 1, wherein the light source is a laser source and the light beam is a laser beam.3. The apparatus of claim 1, wherein:the receiver is an interferometer. 4. The apparatus of claim 1, further comprising:a fiber optic cable situated to convey light to and from the wafer. 5. The apparatus of claim 1, wherein:the fiber optic cable is situated to convey light from the light source through the polishing surface to the wafer. 6. The apparatus of claim 1, wherein:the fiber optic cable is situated to convey light reflected from the wafer to the receiver. 7. The apparatus of claim 1, wherein:the fiber optic cable is bifurcated. 8. A chemical mechanical polisher, comprising:a polishing surface that is movable relative to a substrate; at least one light source operable to transmit light through the polishing surface to a film on the substrate and produce, from the light that is transmitted through the polishing surface, light reflected from the film on the substrate; and at least one device operable to detect a change in the light reflected from the film on the substrate and determine, based on the detected change, when an end point is reached. 9. The chemical mechanical polisher of claim 8, wherein the at least one device comprises a detector to detect interferometric change in the light reflected from the film and an analyzer to control the chemical mechanical polisher in response to the detected interferometric change.10. The chemical mechanical polisher of claim 9, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film to determine a change in dimension of the film.11. The chemical mechanical polisher of claim 10, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film using interferometry at one wavelength.12. The chemical mechanical polisher of claim 10, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film using spectrophotometry over a continuous range of wavelengths.13. The chemical mechanical polisher of claim 10, wherein the analyzer is operable to analyzes interferometric change in the light reflected from the film to determine a change in thickness or planarity of the film.14. The chemical mechanical polisher of claim 8, wherein light transmitted through the polishing surface and the light reflected from the film are transmitted through a rotating fiber optic cable embedded in a rotating platen below the polishing pad.15. The chemical mechanical polisher of claim 8, wherein the at least one light source is operable to transmit light to only a section of the film.16. The chemical mechanical polisher of claim 8, wherein the light source is operable to transmit light to more than one section of the film.17. The chemical mechanical polisher of claim 8, wherein the light source is operable to produces a light of at least one wavelength between 200 and 11,000 nanometers.18. The chemical mechanical polisher of claim 8, wherein the light source is operable to produces laser light.19. A chemical mechanical polisher, comprising:a polishing material having at least one optical access through which light can be transmitted to a portion of a film on a substrate; a platen to support the polishing material; an interferometer operable to detect interferometric changes in light reflected from the film and passing through the optical access in the polishing material; and a device operable to determine, based on the detected interferometric changes, when an end point is reached. 20. The chemical mechanical polisher of claim 19, wherein the at least one optical access in the polishing pad is transmissive to light comprising at least one wavelength between 200 and 11,000 nanometers.21. The chemical mechanical polisher of claim 19, wherein the at least one optical access includes a portion of a fiber optic cable.22. The chemical mechanical polisher of claim 19, further comprising a focusing lens to enhance transmission of light passing between the polishing material and the film on the substrate.
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이 특허에 인용된 특허 (65)
Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
Sandhu Gurtej S. (Boise ID) Schultz Laurence D. (Boise ID) Doan Trung T. (Boise ID), Apparatus for endpoint detection during mechanical planarization of semiconductor wafers.
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Heinz Tony F. (Chappaqua NY) Selwyn Gary S. (Hopewell Junction NY) Singh Syothi (Hopewell Junction NY) Spinetti ; Jr. John A. (Endicott NY), Detection of interfaces with atomic resolution during material processing by optical second harmonic generation.
Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Device and method for detecting an end point in polishing operation.
Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Device for detecting an end point in polishing operations.
Lewis Russell E. (Cupertino CA) Howard Richard E. (Pleasanton CA) Litvak Herbert E. (Cupertino CA), Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across t.
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van Pham Hung (Santa Clara County CA) Borglum Wayne K. (Santa Clara County CA) Mallory Chester (Santa Clara County CA), High accuracy film thickness measurement system.
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Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Kaczorowski Edward M. (Santa Clara CA), Laser interferometer system and method for monitoring and controlling IC processing.
Birang Manoocher (Los Gatos CA), Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber.
Enke Knut (Johannesberg DEX) Hussla Ingo (Hanau DEX) Lorenz Gerhard (Alzenau DEX), Method and apparatus for monitoring layer erosion in a dry-etching process.
Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID), Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o.
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Sandhu, Gurtej S.; Schultz, Laurence D.; Doan, Trung T., Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers.
Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within th.
Brunsch Arwed (Stuttgart DEX) Ruh Wolf-Dieter (Sindelfingen DEX) Trippel Gerhard (Sindelfingen DEX), Method of measuring the thickness of the removed layer in subtractive workpiece processing.
d\Auria Luigi (Paris FRX) Auvray Grard (Paris FRX) Desormiere Bernard (Paris FRX), Optical connection system for the bidirectional exchange of data between a central unit and peripheral units and an elec.
Litvak Herbert E. (Cupertino CA), Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.
Cook Lee M. (Steelville PA) Roberts John V. H. (Newark DE) Jenkins Charles W. (Newark DE) Pillai Raj R. (Newark DE), Polishing pads and methods for their use.
Carey David H. (Austin TX) Pietila Douglass A. (Puyallup WA) Sigmond David M. (Austin TX), Trenching techniques for forming channels, vias and components in substrates.
Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
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