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A method for manufacturing a flexural plate wave sensor includes the steps of depositing an etch-stop layer over a substrate, depositing a membrane layer over the etch stop layer, depositing a piezoelectric layer over the membrane layer, forming a first transducer on the piezoelectric layer and form

A method for manufacturing a flexural plate wave sensor includes the steps of depositing an etch-stop layer over a substrate, depositing a membrane layer over the etch stop layer, depositing a piezoelectric layer over the membrane layer, forming a first transducer on the piezoelectric layer and forming a second transducer on the piezoelectric layer, spaced from the first transducer. The method further includes the steps of etching a cavity through the substrate, the cavity having substantially parallel interior walls, removing the portion of the etch stop layer between the cavity and the membrane layer to expose a portion of the membrane layer, and depositing an absorptive coating on the exposed portion of the membrane layer.

대표청구항 ▼

1. A method for manufacturing a flexural plate wave sensor comprising the steps of:depositing an etch-stop layer over a substrate; depositing a membrane layer over said etch stop layer; depositing a piezoelectric layer over said membrane layer; forming a first transducer on said piezoelectric layer;

1. A method for manufacturing a flexural plate wave sensor comprising the steps of:depositing an etch-stop layer over a substrate; depositing a membrane layer over said etch stop layer; depositing a piezoelectric layer over said membrane layer; forming a first transducer on said piezoelectric layer; forming a second transducer on said piezoelectric layer, spaced from said first transducer; etching a cavity through the substrate, the cavity having substantially parallel interior walls; removing the portion of the etch stop layer between the cavity and the membrane layer to expose a portion of the membrane layer; and depositing an absorptive coating on the exposed portion of the membrane layer. 2. The method of claim 1 further comprising the steps of etching a hole in the piezoelectric and forming a ground contact on the silicon membrane layer.3. A flexural plate wave sensor comprising:a base substrate; an etch stop layer disposed over said base substrate; a membrane layer disposed over said etch stop layer; a cavity disposed in said base substrate and said etch stop layer, thereby exposing a portion of said membrane layer, said cavity having substantially parallel interior walls; an absorptive coating disposed on the exposed portion of said membrane layer within said cavity; a piezoelectric layer disposed over said membrane layer; a first transducer disposed on said piezoelectric layer; and a second transducer disposed on said piezoelectric layer, spaced from said first transducer. 4. The flexural plate wave sensor of claim 3 wherein said first and second transducers are interdigitated transducers.5. The flexural plate wave sensor of claim 3 wherein said first and second transducers are formed from TiPtAu.6. The flexural plate wave sensor of claim 3 wherein said first and second transducers are formed from aluminum.7. The flexural plate wave sensor of claim 3 wherein said piezoelectric layer is formed from a material selected from the group consisting of aluminum nitride, zinc oxide and lead zirconium titanate.8. The flexural plate wave sensor of claim 3 wherein said etch stop layer is formed from silicon dioxide.9. The flexural plate wave sensor of claim 3 wherein said membrane layer is formed from silicon.10. The flexural plate wave sensor of claim 3 wherein said base substrate is formed from silicon.11. A flexural plate wave sensor array comprising:a substrate; and a plurality of flexural plate wave sensors, each sensor including a cavity formed in the substrate, a thin film membrane layer spanning the cavity, a piezoelectric layer disposed on the thin film membrane layer, a transducer disposed on the piezoelectric layer and a plurality of discrete absorptive coatings disposed on said thin film membrane layer within said cavity; wherein said cavity of each of said sensors includes interior walls which are substantially parallel to each other and to the interior walls of adjacent sensors.