초록 ▼

There are provided a system for manufacturing a single-crystal ingot which is equipped with a cooler for cooling the single-crystal ingot being pulled and is capable of forming a tail without involvement of excessive heating of a crucible, as well as to a method for controlling the system. In a syst

There are provided a system for manufacturing a single-crystal ingot which is equipped with a cooler for cooling the single-crystal ingot being pulled and is capable of forming a tail without involvement of excessive heating of a crucible, as well as to a method for controlling the system. In a system for manufacturing a single-crystal ingot having a cooler for cooling a single-crystal ingot which is being pulled from molten raw material (called a single-crystal pulled ingot), when a tail of the single-crystal pulled ingot is formed, the cooler is moved away from the solid/melt interface between the single-crystal ingot and the molten raw material, to thereby reduce the power dissipated by the system. In the system, the cooler is moved upward after the end of a product area of the single-crystal ingot has been cooled until it passes through a grown-in defect temperature range.

대표청구항 ▼

1. A method of controlling a system for manufacturing a single-crystal ingot by means of the Czochralski technique, the system having a cooler provided in a furnace for cooling a predetermined location of a single-crystal ingot which is being pulled from molten raw material, whereinwhen a tail of th

1. A method of controlling a system for manufacturing a single-crystal ingot by means of the Czochralski technique, the system having a cooler provided in a furnace for cooling a predetermined location of a single-crystal ingot which is being pulled from molten raw material, whereinwhen a tail of the single-crystal pulled ingot is formed the cooler is moved up in correspondence with a pulling-up amount of the single-crystal ingot. 2. A method of controlling a system for manufacturing a single-crystal ingot according to claim 1, whereinafter the single-crystal ingot has been pulled from the molten raw material, the cooler is moved close to the crucible whose heating has been completed. 3. The method as defined in claim 1, wherein, when the cooler is moved away from the solid/melt interface between the single-crystal ingot and the molten raw material, a timing at which the cooler is moved away from the solid/melt interface is delayed, to thereby increase an area of the single-crystal pulled ingot to be used for manufacturing products.4. The method as defined in claim 3, wherein the timing at which the cooler is moved upward is controlled in consideration of a balance between the saving in power consumption stemming from movement of the cooler away from the solid/melt interface between the single-crystal ingot and molten raw material and an increase in the area of the single-crystal ingot to be used for manufacturing products due to a delay in the timing at which the cooler is moved away, thereby optimizing the economy of wafer production.5. A method of manufacturing a single-crystal ingot, through use of a system for manufacturing a single-crystal ingot by means of the Czochralski technique, the system having a cooler provided in a furnace for cooling a predetermined location of a single-crystal ingot which is being pulled from molten raw material, whereina diameter of the single-crystal pulled ingot is controlled by changing a distance from the cooler to a solid/melt interface between the single-crystal pulled ingot and the molten raw material. 6. A method of controlling a system for manufacturing a single-crystal ingot by means of the Czochralski technique, the system having a cooler provided in a furnace for cooling a predetermined location of a single-crystal ingot which is being pulled from molten raw material, whereinwhen a tail of the single-crystal pulled ingot is formed the cooler is moved away from a solid/melt interface between the single-crystal ingot and the molten raw material to maintain a desired diameter of the single-crystal pulled ingot.