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특허 상세정보

MyON담기
내보내기 페이스북 공유 카카오톡 공유

Polishing pad for in-situ endpoint detection

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B49D-001/00   
미국특허분류(USC) 451/006; 451/008; 451/009; 451/010; 451/041; 451/526; 451/527; 451/533
출원번호 US-0722305 (2003-11-25)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Fish &
인용정보 피인용 횟수 : 8  인용 특허 : 47
초록

An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

대표
청구항
▼

1. A polishing article for use in a chemical mechanical polishing system, said polishing article comprising:a polishing pad having a polishing surface and a bottom surface; and a window from said polishing surface to said bottom surface, said window including a solid light transmissive element abutting and secured to the polishing pad, the solid light transmissive element being more transmissive to light than the polishing surface. 2. The polishing pad of claim 1, wherein a top surface of said light transmissive element is flush with the polishing surfac...

이 특허에 인용된 특허 (47)

  1. Manoocher Birang ; Boguslaw Swedek. Adaptive endpoint detection for chemical mechanical polishing. USP2002056383058.
  2. Birang, Manoocher; Gleason, Allan. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations. USP2004016676717.
  3. Birang, Manoocher; Johansson, Nils; Gleason, Allan. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations. USP2004046719818.
  4. Birang Manoocher ; Pyatigorsky Grigory. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations. USP1999105964643.
  5. Hyde Thomas C. (Chandler AZ) Roberts John V. H. (Newark DE). Apparatus for interlayer planarization of semiconductor material. USP1993115257478.
  6. Yu Chris C. (Boise ID) Sandhu Gurtej S. (Boise ID). Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection. USP1993085240552.
  7. Doan Trung T. (Boise ID) Meikle Scott (Boise ID). Chemical-mechanical polishing processes of planarizing insulating layers. USP1995035395801.
  8. Sune Ching-Tzong (Hsinchu TWX) Lu Chih-Yuan (Hsinchu TWX). Chemical/mechanical polishing for ULSI planarization. USP1994075332467.
  9. Rostoker Michael D. (San Jose CA). Detecting the endpoint of chem-mech polishing and resulting semiconductor device. USP1993115265378.
  10. Rostoker, Michael D.. Detecting the endpoint of chem-mech polishing, and resulting semiconductor device. USP1994065321304.
  11. Heinz Tony F. (Chappaqua NY) Selwyn Gary S. (Hopewell Junction NY) Singh Syothi (Hopewell Junction NY) Spinetti ; Jr. John A. (Endicott NY). Detection of interfaces with atomic resolution during material processing by optical second harmonic generation. USP1994035294289.
  12. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT). Device and method for detecting an end point in polishing operation. USP1993055213655.
  13. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT). Device for detecting an end point in polishing operations. USP1993095242524.
  14. Cote William J. (Poughquag NY) Cronin John E. (Milton VT) Hill William R. (Underhill VT) Hoffman Cheryl A. (Colchester VT). Endpoint detection apparatus and method for chemical/mechanical polishing. USP1994055308438.
  15. Birang Manoocher ; Gleason Allan ; Guthrie William L.. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus. USP2000046045439.
  16. Birang Manoocher ; Gleason Allan ; Guthrie William L.. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus. USP1999045893796.
  17. Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT). In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection. USP1988124793895.
  18. Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ). In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection. USP1992015081421.
  19. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY). In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing. USP1995075433651.
  20. Lustig Naftali E. (Croton on Hudson NY) Feenstra Randall M. (Mt. Kisco NY) Guthrie William L. (Hopewell Junction NY). In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage. USP1994085337015.
  21. Tang Wallace T. Y.. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical po. USP1999095949927.
  22. Tang, Wallace T. Y.. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization. USP2003096614529.
  23. Chaussade Pierre,FRX ; Heutte Catherine,FRX. Laminated safety pane for aircraft. USP1998065766755.
  24. Birang Manoocher (Los Gatos CA). Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber. USP1992035097430.
  25. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H.. Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher. USP2000116146248.
  26. Schultz Laurence D. (Boise ID). Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer. USP1992015081796.
  27. Enke Knut (Johannesberg DEX) Hussla Ingo (Hanau DEX) Lorenz Gerhard (Alzenau DEX). Method and apparatus for monitoring layer erosion in a dry-etching process. USP1990084948259.
  28. Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID). Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o. USP1993035196353.
  29. Cote William J. (Poughquag NY). Method for determining planarization endpoint during chemical-mechanical polishing. USP1993085234868.
  30. Curtis Bernard J. (Gattikon CHX). Method for end point detection in a plasma etching process. USP1982054328068.
  31. Birang, Manoocher; Johansson, Nils; Gleason, Allan. Method for in-situ endpoint detection for chemical mechanical polishing operations. USP2003036537133.
  32. Carr Jeffrey W. (Fishkill NY) David Lawrence D. (Wappingers Falls NY) Guthrie William L. (Hopewell Junction NY) Kaufman Frank B. (Amawalk NY) Patrick William J. (Newburgh NY) Rodbell Kenneth P. (Poug. Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor. USP1990094954142.
  33. Sandhu, Gurtej S.; Schultz, Laurence D.; Doan, Trung T.. Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers. USP1991075036015.
  34. Birang Manoocher ; Gleason Allan ; Guthrie William L.. Method of forming a transparent window in a polishing pad. USP2001086280290.
  35. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT). Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within th. USP1992075132617.
  36. Brunsch Arwed (Stuttgart DEX) Ruh Wolf-Dieter (Sindelfingen DEX) Trippel Gerhard (Sindelfingen DEX). Method of measuring the thickness of the removed layer in subtractive workpiece processing. USP1985044512847.
  37. Masuko Masami (Tokyo JPX) Ichikawa Chikanobu (Koshoku JPX). Method of ultrasonic control for lapping and an apparatus therefor. USP1981064272924.
  38. Koos Daniel A. (Boise ID) Meikle Scott (Boise ID). Optical end point detection methods in semiconductor planarizing polishing processes. USP1995055413941.
  39. Litvak Herbert E. (Cupertino CA). Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment. USP1996035499733.
  40. Takahashi Tsutomu (Yokohama JPX) Tohyama Keiichi (Kawasaki JPX) Takahashi Tamami (Yamato JPX). Polishing apparatus having endpoint detection device. USP1997095672091.
  41. Moriyama Shigeo (Tama JPX) Kawamura Yoshio (Kokubunji JPX) Homma Yoshio (Hinode-machi JPX) Kusukawa Kikuo (Fujino-machi JPX) Furusawa Takeshi (Hachioji JPX). Polishing method. USP1997035609511.
  42. Aiyer Arun A.. Polishing pad thinning to optically access a semiconductor wafer surface. USP2001066248000.
  43. Roberts John V. H. (Newark DE). Polishing pads. USP1997025605760.
  44. Cook Lee M. (Steelville PA) Roberts John V. H. (Newark DE) Jenkins Charles W. (Newark DE) Pillai Raj R. (Newark DE). Polishing pads and methods for their use. USP1996025489233.
  45. Kajimoto Nobuyuki (Omuta JPX) Tamaki Akihiro (Omuta JPX) Nagata Teruyuki (Omuta JPX). Sulfur-containing polyurethane base lens resin. USP1987074680369.
  46. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID). System and method for real-time control of semiconductor a wafer polishing, and a polishing head. USP1996015486129.
  47. Carey David H. (Austin TX) Pietila Douglass A. (Puyallup WA) Sigmond David M. (Austin TX). Trenching techniques for forming channels, vias and components in substrates. USP1993065219787.

이 특허를 인용한 특허 피인용횟수: 8

  1. Birang, Manoocher; Johansson, Nils; Gleason, Allan. Apparatus and method for in-situ endpoint detection for semiconductor processing operations. USP2014088795029.
  2. Allison, William; Huang, Ping; Scott, Diane; Frentzel, Richard; Kerprich, Robert. CMP pad with local area transparency. USP2015049017140.
  3. Birang,Manoocher; Gleason,Allan; Guthrie,William L.. Polishing assembly with a window. USP2007087255629.
  4. Allison, William; Scott, Diane; Kerprich, Robert; Huang, Ping; Frentzel, Richard. Soft polishing pad for polishing a semiconductor substrate. USP2015109156124.
  5. Birang, Manoocher; Pyatigorsky, Grigory. Substrate polishing metrology using interference signals. USP2010117841926.
  6. Birang, Manoocher; Pyatigorsky, Grigory. Substrate polishing metrology using interference signals. USP2010067731566.
  7. Birang, Manoocher; Pyatigorsky, Grigory. Substrate polishing metrology using interference signals. USP2013108556679.
  8. Birang, Manoocher; Pyatigorsky, Grigory. Substrate polishing metrology using interference signals. USP2012018092274.

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