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특허 상세정보

Polishing pad for in-situ endpoint detection

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B49D-001/00   
미국특허분류(USC) 451/006; 451/008; 451/009; 451/010; 451/041; 451/526; 451/527; 451/533
출원번호 US-0722305 (2003-11-25)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Fish &
인용정보 피인용 횟수 : 8  인용 특허 : 47
초록

An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

대표
청구항

1. A polishing article for use in a chemical mechanical polishing system, said polishing article comprising:a polishing pad having a polishing surface and a bottom surface; and a window from said polishing surface to said bottom surface, said window including a solid light transmissive element abutting and secured to the polishing pad, the solid light transmissive element being more transmissive to light than the polishing surface. 2. The polishing pad of claim 1, wherein a top surface of said light transmissive element is flush with the polishing surfac...

이 특허에 인용된 특허 (47)

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