IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0709265
(2004-04-26)
|
우선권정보 |
TW-0205886 (2002-04-29) |
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
61 인용 특허 :
1 |
초록
▼
A flip-chip die and a flip-chip package substrate. The flip-chip die has an active surface containing a plurality of core power/ground pads, at least one signal pad rings, at least one power pad rings and at least one ground pad rings. The core power/ground pads are located in the central region of
A flip-chip die and a flip-chip package substrate. The flip-chip die has an active surface containing a plurality of core power/ground pads, at least one signal pad rings, at least one power pad rings and at least one ground pad rings. The core power/ground pads are located in the central region of the die while the die pad rings are arranged concentrically just outside the central power/ground pad occupied region. The uppermost layer of the flip-chip package substrate has a plurality of bump pads that correspond to the die pads on the die. Non-signal bump pad rings may also form outside the signal bump pad ring. Pairs of power trace or ground trace may also form on the sides of a signal trace in any one of the wiring layers within the flip-chip package substrate to serve as guard traces for the signal trace.
대표청구항
▼
1. A flip-chip package substrate, comprising:a plurality of wiring layers forming a stack and having an uppermost wiring layer, a bottommost layer, and at least one inner wiring layer; a plurality of insulation layers sandwiched between two neighboring wiring layers for isolating the wiring layers s
1. A flip-chip package substrate, comprising:a plurality of wiring layers forming a stack and having an uppermost wiring layer, a bottommost layer, and at least one inner wiring layer; a plurality of insulation layers sandwiched between two neighboring wiring layers for isolating the wiring layers such that an insulation layer and a wiring layer stack on top of each other alternately; and a plurality of conductive plugs passing through the insulation layer for connecting the wiring layers electrically; wherein the uppermost wiring layer has a plurality of core power/ground bump pads, at least one signal bump pad rings, at least one power bump pad rings and at least one ground bump pad rings, the core power/ground pads are located in the central region of the die while the signal pad ring, the power pad ring and the ground pad ring are located outside the central power/ground pad region but concentric to the central power/ground pad region; wherein at least one non-signal bump pad ring encloses at least one signal bump pad ring; and wherein at least one inner wiring layer has at least one signal trace, and at least one guard traces and the guard trace is adjacent to the signal trace. 2. The flip-chip package substrate of claim 1, wherein the signal bump pad ring encloses a plurality of bump pads such that over 50% of the bump pads within the signal bump pad ring is signal bump pads.3. The flip-chip package substrate of claim 1, wherein the signal bump pad ring encloses a plurality of bump pads and the bump pads are positioned as a multiple of rings.4. The flip-chip package substrate of claim 1, wherein the power bump pad ring includes a plurality of bump pads such that over 50% of the bump pads within the power bump pad ring is power bump pads.5. The flip-chip package substrate of claim 1, wherein the power bump pad ring encloses a plurality of bump pads and the bump pads are positioned as a multiple of rings.6. The flip-chip package substrate of claim 1, wherein the ground bump pad ring includes a plurality of bump pads such that over 50% of the bump pads within the ground bump pad ring is ground bump pads.7. The flip-chip package substrate of claim 1, wherein the ground bump pad ring encloses a plurality of bump pads and the bump pads are positioned as a multiple of rings.8. The flip-chip package substrate of claim 1, wherein the guard trace is a power trace.9. The flip-chip package substrate of claim 1, wherein the guard trace is a ground trace.10. The flip-chip package substrate of claim 1, wherein the non-signal bump pad ring is a power bump pad ring.11. The flip-chip package substrate of claim 1, wherein the non-signal bump pad ring is a ground bump pad ring.12. A flip-chip package, comprising:a package substrate, comprising: a plurality of wiring layers forming a stack and having an uppermost wiring layer, a bottommost layer, and at least one inner wiring layer, a plurality of insulation layers sandwiched between two neighboring wiring layers for isolating the wiring layers such that an insulation layer and a wiring layer stack on top of each other alternately, and a plurality of conductive plugs passing through the insulation layer for connecting the wiring layers electrically, wherein the uppermost wiring layer has a plurality of core power/ground bump pads, at least one signal bump pad rings, at least one power bump pad rings and at least one ground bump pad rings, the core power/ground pads are located in the central region of the die while the signal pad ring, the power pad ring and the ground pad ring are located outside the central power/ground pad region but concentric to the central power/ground pad region, wherein at least one non-signal bump pad ring encloses at least one signal bump pad ring, and wherein at least one inner wiring layer has at least one signal trace, and at least one guard traces and the guard trace is adjacent to the signal trace; and a chip, electrically connected to the package substrate by flip-chip bonding. 13. The flip-chip package substrate of claim 12, wherein the signal bump pad ring encloses a plurality of bump pads such that over 50% of the bump pads within the signal bump pad ring is signal bump pads.14. The flip-chip package substrate of claim 12, wherein the signal bump pad ring encloses a plurality of bump pads and the bump pads are positioned as a multiple of rings.15. The flip-chip package substrate of claim 12, wherein the power bump pad ring includes a plurality of bump pads such that over 50% of the bump pads within the power bump pad ring is power bump pads.16. The flip-chip package substrate of claim 12, wherein the power bump pad ring encloses a plurality of bump pads and the bump pads are positioned as a multiple of rings.17. The flip-chip package substrate of claim 12, wherein the ground bump pad ring includes a plurality of bump pads such that over 50% of the bump pads within the ground bump pad ring is ground bump pads.18. The flip-chip package substrate of claim 12, wherein the ground bump pad ring encloses a plurality of bump pads and the bump pads are positioned as a multiple of rings.19. The flip-chip package substrate of claim 12, wherein the guard trace is a power trace.20. The flip-chip package substrate of claim 12, wherein the guard trace is a ground trace.21. The flip-chip package substrate of claim 12, wherein the non-signal bump pad ring is a power bump pad ring.22. The flip-chip package substrate of claim 12, wherein the non-signal bump pad ring is a ground bump pad ring.
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