초록

The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.

대표청구항 ▼

1. A method for depositing a metal layer comprising a metal on a surface of a substrate, the method comprising the steps of:exposing said substrate to a first solution, said first solution comprising a depolarizing compound, wherein said first solution is substantially free of ions of said metal, wh

1. A method for depositing a metal layer comprising a metal on a surface of a substrate, the method comprising the steps of:exposing said substrate to a first solution, said first solution comprising a depolarizing compound, wherein said first solution is substantially free of ions of said metal, whereby said depolarizing compound is deposited on said substrate while substantially no metal is deposited on said substrate; and thereafter exposing said substrate to a second solution while applying a current between said substrate and an anode, said second solution comprising an ion of said metal, whereby said metal is deposited on said substrate. 2. The method as recited in claim 1, wherein said metal is selected from the group consisting of copper, gold, silver, aluminum, platinum, nickel, chromium, zinc, and alloys and mixtures thereof.3. The method as recited in claim 1, wherein said metal is copper.4. The method as recited in claim 1, wherein said metal is an alloy, the alloy comprising two or more alloyed metals selected from the group consisting of copper, gold, silver, aluminum, platinum, nickel, chromium, and zinc, and wherein said ion of said metal comprises the ions of said two or more alloyed metals.5. The method as recited in claim 4, wherein said alloy comprises copper.6. The method as recited in claim 1, wherein said depolarizing compound is a brightening compound or a leveling compound.7. The method as recited in claim 6, wherein said depolarizing compound is an organic sulfide.8. The method as recited in claim 1, wherein said depolarizing compound has the chemical formula:A-R1?(S)n?R2-Q-O3-D, wherein R1 and R2 are alkylene groups, A is a moiety selected from the group consisting of hydrogen, sulfonate, phosphonate, an alkaline metal sulfonate, an alkaline metal phosphonate, an ammonium salt of a sulfonate, an ammonium salt of a phosphonate, an acid of a sulfonate, an acid of a phosphonate, and an alkali metal, n is an integer from 1 to 3, D is selected from the group consisting of hydrogen, a Group I metal ion, a Group II metal ion, and an ammonium ion, and Q is sulfur or phosphorus. 9. The method as recited in claim 1, wherein said depolarizing compound comprises a compound selected from the group consisting of HO3P?(CH2)3?S?S?(CH2)3?PO3H, HO3S?(CH2)4?S?S?(CH2)4?SO3H, NaO3S?(CH2)3?S?S?S?S?S?(CH2)3?SO3Na, HO3S?(CH2)2?S?S?(CH2)2?SO3H, CH3?S?S?CH2?SO3H, HS?(CH2)3?SO3H, and mixtures thereof.10. The method as recited in claim 1, wherein during said step of exposing said substrate to said first solution essentially no current is applied between the substrate and the anode.11. The method as recited in claim 1, wherein during said step of exposing said substrate to said first solution, a current is applied between the substrate and the anode.12. The method as recited in claim 1, wherein said first solution comprises a halide ion.13. The method as recited in claim 1, wherein said first solution comprises a pH adjuster.14. The method as recited in claim 1, wherein said second solution is substantially free of depolarizing compounds.15. The method as recited in claim 1, wherein said second solution comprises a depolarizing compound.16. The method as recited in claim 1, wherein said second solution comprises a halide ion.17. The method as recited in claim 1, wherein said step of exposing said substrate to a first solution and said step of exposing said substrate to a second solution are repeated.18. The method as recited in claim 1, further comprising the step of polishing said substrate.19. A method for depositing a metal, said method comprising the steps of:providing a substrate having a surface, wherein said substrate is a semiconducting substrate and wherein said surface comprises an insulating layer; creating an opening in said insulating layer; forming a barrier layer on a sidewall and on a bottom of said opening; forming a copper seed layer on said barrier layer; thereafter exposing said substrate to a first solution, said first solution comprising a depolarizing compound, wherein said first solution is substantially free of ions of said metal, whereby said depolarizing compound is deposited on said substrate while substantially no metal is deposited on said substrate; thereafter exposing said substrate to a second solution while applying a current between said substrate and an anode, said second solution comprising an ion of said metal, whereby said metal is deposited on said substrate; and repeating the steps of exposing said substrate to a first solution and exposing said substrate to a second solution until the opening is filled with said metal.