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Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. In an embodiment, the method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer, and forming a first bonding layer on the source substrate su

Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. In an embodiment, the method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer, and forming a first bonding layer on the source substrate surface. A second bonding layer may be formed on a surface of an intermediate support, and the exposed surfaces of the first and second bonding layers joined to form a composite substrate. Next, the source substrate is detached from the composite substrate along the zone of weakness to expose a surface of the transfer layer, and a support material is deposited onto the exposed surface of the transfer layer. The transfer layer and support material are then separated from the composite substrate by elimination of at least the first bonding layer to form the final substrate. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.

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1. A method of fabricating a final substrate for use in optics, eletronics, or optoelectronics which method comprises:forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; forming a first bonding layer on the source substrate surface; forming a second bonding

1. A method of fabricating a final substrate for use in optics, eletronics, or optoelectronics which method comprises:forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; forming a first bonding layer on the source substrate surface; forming a second bonding layer on a surface of an intermediate support; joining exposed surfaces of the first and second bonding layers to form a composite substrate; detaching the source substrate from the composite substrate along the zone of weakness to expose a surface of the transfer layer; depositing support material onto the exposed surface of the transfer layer; and separating the transfer layer and support material from the composite substrate by elimination of at least the first bonding layer to form the final substrate. 2. The method of claim 1 wherein the zone of weakness is formed by implanting atomic species into the source substrate.3. The method of claim 1 wherein the deposited support material is a layer having a greater thickness than the transfer layer.4. The method of claim 1 wherein the support material is progressively deposited on the transfer layer using at least one of chemical vapor deposition,. liquid deposition, and molecular beam deposition.5. The method of claim 1 further comprising depositing a useful layer on a face of the transfer layer.6. The method of claim 5 wherein at least one useful layer is deposited before depositing the support material.7. The method of claim 5 wherein at least one useful layer is deposit after depositing the support material.8. The method of claim 5 wherein the useful layer is made of a material having a large band gap, and comprises at least one of gallium nitride, and aluminum nitride.9. The method according to claim 8 wherein the useful layer is made of compounds of at least two elements including at least one of aluminum, indium, and gallium.10. The method of claim 5 wherein the useful layer and the support material are each deposited on a different face of the transfer layer.11. The method of claim 1 wherein the transfer layer is made of a monocrystalline material.12. The method of claim 1 wherein the support material is made of at least one of monocrystalline materials, polycrystalline materials, amorphous materials, materials comprising a plurality of phases, and materials that are less expensive than that of the transfer layer.13. The method of claim 1 wherein at least one of the first and second bonding layers is made of at least one of amorphous materials, polycrystalline material, and metallic materials.14. The method of claim 1 wherein the transfer layer is made of at least one of silicon, silicon carbide, sapphire, diamond, gallium nitride, aluminum nitride, and a combination of at least two of these materials.15. The method of claim 1 wherein the support material is made of at least one of silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, and a combination of at least two of these materials.16. The method of claim 1 which further comprises optimizing the conditions under which the support material is deposited so that the support material exhibits at least one of monocrystalline quality, polycrystalline quality, an insulating quality, and a conductive quality.17. The method of claim 1 further comprising using the transfer layer as a seed layer to form the support material.18. The method of claim 1 further comprising recycling at least one of the source substrate and the intermediate support.19. A method of fabricating a final substrate for use in optics, electronics, or optoelectronics comprising:forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; transferring the transfer layer onto an intermediate support; and depositing a support material on the transfer layer to form the final substrate using the transfer layer as a seed layer to form the support material. 20. The method of claim 19 wherein the zone of weakness is formed by implanting atomic species into the source substrate.21. The method of claim 19 wherein the deposited support material is a layer having a greater thickness than the transfer layer.22. The method of claim 19 wherein the support material is progressively deposited on the transfer layer using at least one of chemical vapor deposition, liquid deposition, and molecular beam deposition.23. The method of claim 19 further comprising depositing at least one useful layer on a face of the transfer layer.24. The method of claim 23 wherein the useful layer is deposited on the transfer layer before detaching the transfer layer.25. The method of claim 23 wherein the useful layer is deposited before depositing the support material.26. The method of claim 23 wherein the useful layer is deposited after depositing the support material.27. The method of claim 23 wherein the useful layer is made of a material having a large band gap, and comprises at least one of gallium nitride, and aluminum nitride.28. The method of claim 23 wherein the useful layer is made of compounds of at least two elements including at least one of aluminum, indium, and gallium.29. The method of claim 23 wherein the useful layer and the support material are each deposited on a different face of the transfer layer.30. The method of claim 19 wherein the support material is made of at least one of monocrystalline materials, polycrystalline materials, amorphous materials, materials comprising a plurality of phases, and materials that are less expensive than that of the transfer layer.31. The method of claim 19 further comprising transferring the transfer layer onto an intermediate support prior to depositing the support material on the transfer layer.32. The method of claim 31 wherein the intermediate support includes a plurality of transfer layers.33. The method of claim 31 further comprising forming a bonding layer on the intermediate support before transferring the transfer layer.34. The method of claim 33 further comprising eliminating the intermediate support.35. The method of claim 19 further comprising forming a bonding layer on the transfer layer before it is detached from the source substrate.36. The method of claim 35 wherein the bonding layer is made of at least one of amorphous materials, polycrystalline materials, and metallic materials.37. The method of claim 19 wherein the transfer layer is made of at least one of silicon carbide, a monocrystalline material, sapphire, diamond, gallium nitride, aluminum nitride, and a combination of at least two of these materials.38. The method of claim 19 wherein the support material is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, and a combination of at least two of these materials.39. The method of claim 19 which further comprises optimizing the conditions under which the support material is deposited so that the support material exhibits at least one of monocrystalline quality, polycrystalline quality, an insulating quality, and a conductive quality.