초록 ▼

This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its perimeter b

This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its perimeter by a measuring device (150). Then, while the vertical position of a nozzle (120) is dynamically adjusted on the basis of the measurement result, and at the same time, the bonded substrate stack (50) is rotated, the bonded substrate stack (50) is separated into two substrates at a porous layer by injecting a fluid ejected from the nozzle (120).

대표청구항 ▼

1. A separating method of separating a member using a fluid, comprising the steps of: measuring a distortion amount of a peripheral portion of a member which has a concave portion on a peripheral side of the member and a separation layer inside; moving, at least one of the member, and an ejecting po

1. A separating method of separating a member using a fluid, comprising the steps of: measuring a distortion amount of a peripheral portion of a member which has a concave portion on a peripheral side of the member and a separation layer inside; moving, at least one of the member, and an ejecting portion while separating the member by ejecting a fluid from the ejecting portion, in accordance with the measured distortion amount of the peripheral portion of the member so that the fluid ejected from the ejecting portion is injected into the concave portion.2. The method according to claim 1, whereinthe member is a bonded member formed by bonding first and second substrates, and in the moving step, at least one of the member and the ejecting portion is moved so that the fluid hits a bonding interface of the concave portion. 3. The method according to claim 1, wherein the member is a bonded member obtained by bonding, through an insulating layer, a first substrate having a non-porous single-crystal silicon layer on the separation layer, and a second substrate.4. The method according to claim 1, wherein the measuring step is performed before the fluid is ejected or while the fluid is ejected.5. A processing method of processing a plate member which has a separation layer, comprising: the holding step of holding a plate member by a holding portion;the measuring step of measuring a position of a peripheral portion of the plate member held by the holding portion; and the separation step of ejecting a fluid from an ejecting portion and separating the plate member held by the holding portion at the separation layer by using the fluid, wherein in the separation step, at least one of the holding portion and the ejecting portion is dynamically driven on the basis of a measurement result obtained in the measuring step so that the fluid ejected from the ejecting portion is injected into a concave portion on a peripheral side of the plate member held by the holding portion. 6. The method according to claim 5, wherein in the separation step, at least one of the holding portion and the ejecting portion is dynamically driven on the basis of the measurement result obtained by a measuring device so that the fluid ejected from the ejecting portion is injected into a bonding interface of the plate member, which is located at the concave portion on the peripheral side surface, or into the separation layer through the concave portion.7. The method according to claim 5, wherein in the measuring step, a position, of the peripheral portion of the plate member held by the holding portion, in a direction perpendicular to the separation layer is measured.8. The method according to claim 7, wherein in the separation step, at least one of the holding portion and ejecting portion is dynamically driven in the direction perpendicular to the separation layer on the basis of the measurement result obtained in the measuring step.9. The method according to claim 5, wherein in the separation step, a direction of the ejecting portion is dynamically changed on the basis of the measurement result obtained in the measuring step.10. The method according to claim 5, wherein in the separation step, the plate member held by the holding portion is separated while rotating the plate member about an axis perpendicular to the separation layer so that the fluid ejected from the ejecting portion is injected into the plate member throughout a perimeter of the plate member.11. The method according to claim 10, wherein in the measuring step, the position of the peripheral portion of the plate member held by the holding portion is measured throughout a perimeter of the plate member while rotating the plate member about the axis perpendicular to the separation layer.12. The method according to claim 5, wherein the separation step is performed after the measuring step.13. The method according to claim 5, wherein the separation step is performed simultaneously with the measuring step.14. The method according to claim 5, wherein the plate member has a disk shape.15. The method according to claim 5, wherein the holding portion horizontally holds the plate member.16. The method according to claim 5, wherein the separation layer is a layer formed by anodization or ion implantation.17. A semiconductor substrate manufacturing method comprising the steps of:forming a bonded substrate stack as a plate member by bonding a first substrate having a separation layer inside and a transfer layer on the separation layer to a second substrate; and separating the bonded substrate stack at the separation layer by using the processing method of claim 5. 18. A semiconductor device manufacturing method comprising the steps of:preparing an SOI substrate using the manufacturing method of claim 17; and isolating an SOI layer of the SOI substrate and forming a transistor on the isolated SOI layer.