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A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluo

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

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1. A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including a vapor source reagent-mixture including a metalloamide source reagent compound selected from the group consisting of:M(NR1R2)x; and wherein M is selected from the group consisting

1. A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including a vapor source reagent-mixture including a metalloamide source reagent compound selected from the group consisting of:M(NR1R2)x; and wherein M is selected from the group consisting of Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and it is from 1-6; andan aminosilane source reagent compound selected from the group consisting of: HxSiAy(NR1R2)4-x-y; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; n is from 1-6.2. The CVD precursor composition according to claim 1, wherein the aminosilane soiree reagent compound is selected from the group consisting of: Si(NMe2)3Cl, Si(NEt2)2Cl2, Si(NMe2)4, and Si(NEt2)4.3. The CVD precursor composition according to claim 1, wherein the metalloamide source reagent compound and the aminosilane source reagent compound are injected by liquid delivery into a chemical vapor deposition chamber.4. The CVD precursor composition according to claim 1, wherein the metalloamide source reagent compound and the aminosilane source reagent compound are delivered by bubbler into a chemical vapor deposition chamber.5. The CVD precursor composition according to claim 1, wherein the precursor composition further comprises a solvent medium selected from the coup consisting of: ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers and combinations of two or more of the foregoing.6. The CVD precursor composition according to claim 1, wherein the metalloamide source reagent compound is injected by liquid delivery into a chemical vapor deposition chamber.7. A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of:HxSiAy(NR1R2)4-x-y; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 1 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6.8. A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of Si(NMe2)2Cl, Si(NEt2)2Cl2, Si(NMe2)4, and Si(NEt2)4.9. The CVD precursor composition according to claim 7, wherein R1 and R2 of the aminosilane are methyl.10. The CVD precursor composition according to claim 7, wherein R1 and R2 ethyl.11. A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound having the formula:HxSiAy(NR1R2)4-r-yt wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is halogen; Y is from 0 to 3; N is nitrogen; R1 is methyl, R2 is ethyl; and n is from 1-6. 12. The CVD precursor composition according to claim 11, wherein the aminosilane source reagent compound is Si(NMeEt)4.13. A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one aminosilane source reagent compound selected from the group consisting of:HxSiAy(NR1R2)4-x-y; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6 and a solvent medium selected from the group consisting of: ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers and combinations of two or more of the foregoing.14. The CVD precursor composition according to claim 13, wherein the solvent is octane.15. The CVD precursor composition according to claim 13, wherein the aminosilane source reagent compound is injected by liquid delivery into a chemical vapor deposition chamber.16. The CVD precursor of claim 13, wherein the precursor composition further comprises a metalloamide source reagent compound selected from the group consisting of:M(NR1R2)x; and wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; end n is from 1-6.17. The CVD precursor composition according to claim 16, wherein R1 and R2 of the metalloamide source reagent are methyl.18. The CVD precursor composition according to claim 16, wherein R1 and R2 of the metalloamide source reagent compound are ethyl.19. The CVD precursor composition according to claim 16, wherein R1 of the metalloamide source reagent compound is methyl and R2 of the metalloamide source reagent compound is ethyl.20. The CVD precursor composition according to claim 16, wherein M is Zr.21. The CVD precursor composition according to claim 16, wherein M is Hf.22. The CVD precursor composition according to claim 16, wherein the metalloamide source reagent compound is selected from the group consisting of: Zr(NMe2)4, Zr(NMeEt)4, Zr(NEt2)4, Ta(NEt2)5, Ta(NMeEt2)5, Ta(NMeEt)5, Zr(NiPr2)4, Zr(NMe2)2(NPr2)2, Zr(NC6H12)4, Zr(NEt2)2(NPr2)2, Hf(NEt2)4, Hf(NMe2)4, Hf(NMeEt)4, La(NMe2)3, La(NEt2)3, La(NMeEt)3, Al(NMe2)3, Al(NEt2)3, Y(NMe2)3, Y(NEt2)3, Y(NMeEt)3, Ti(NMe2)4, Ti(NEt3)4, Ti(NMeEt)4, Ta(NMe2)5, Ta(NEt2)5.23. The CVD precursor composition according to claim 16, wherein the metalloamide source reagent compound is selected from the group consisting of Zr(NMe2)4, Zr(NEt2)4, Zr(NMeEt)4, Hf(NEt2)4, Hf(NMe2)4, and Hf(NMeEt)4.24. A CVD multi-component, single source reagent composition useful for forming a silicate thin film dielectric on a substrate, the source reagent composition comprising at least one metalloamide vapor source reagent compound selected from the group consisting of:M(NR1R2)x; and wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and n is from 1-6; andan aminosilane vapor source reagent compound selected from the group consisting of: HxSiAy(NR1R2)4-x-y; and wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and a is from 1-6; anda solvent medium in which the metalloamide compound and the aminosilane compound are soluble or suspendable. 25. A CVD method of forming a dielectric thin film on a substrate, comprising the steps of:vaporizing a source reagent composition comprising at least one metalloamide source reagent compound and at least one aminosilane source reagent compound, to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in said chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate. 26. The method according to claim 25, wherein the metalloamide source reagent compound is selected from the group consisting of:M(NR1R2)x; and wherein M is selected from the group consisting of Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and n is from 1-6.27. The CVD method according to claim 25, wherein the source reagent composition is vaporized in a liquid delivery apparatus.28. The CVD method according to claim 25, wherein the source reagent vapor is transported into the chemical vapor deposition chamber in a pulsed deposition mode.29. The CVD method according to claim 25, wherein the dielectric thin film is deposited in the absence of an oxidizer.30. The CVD method according to claim 25, wherein the source reagent vapor further comprises a co-reactive gas.31. The CVD method according to claim 30, wherein the co-reactive gas is selected from the group consisting of ozone, water vapor and reactive alcohols.32. The CVD method according to claim 25, wherein the metalloamide source reagent compound is selected from the group consisting of: Zr(NMe2)4, Zr(NEt2)4, Zr(NMeEt)4, Hf(NMe2)4, Hf(NEt2)4, and Hf(NMeEt)4.33. The CVD method according to claim 25, wherein the metalloamide source reagent compound is Hf(NMe2)4.34. A CVD method of forming a dielectric thin film on a substrate, comprising the steps of:vaporizing a source reagent composition comprising at least one metalloamide precursor dissolved or suspended in octane, to form a source reagent precursor vapor; transforming the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature, to deposit a dielectric thin film on the substrate. 35. The CVD method according to claim 25, wherein the metalloamide source reagent compound is solubilized or suspended in a solvent.36. The CVD method according to claim 25, wherein the metalloamide source reagent compound is Zr(NMe2)4.37. A method of forming a dielectric thin film a substrate, comprising the steps of:vaporizing a source reagent composition comprising La(NMe2) and Zr(NMe2)4 to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate. 38. A CVD method of forming a dielectric thin film on a substrate, comprising the steps of:vaporizing a source reagent composition comprising aX(NMe2)3, to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in said chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate. 39. A CVD method of forming a dielectric thin film on a substrate, comprising the steps of:vaporizing a source reagent composition comprising Hf(N(CH3)2)4 and La(N(CH3)2)3, to form a source reagent precursor vapor; transporting the source reagent precursor vapor into a chemical vapor deposition zone, optionally using a carrier gas; contacting the source reagent precursor vapor with a substrate in the chemical vapor deposition zone at elevated temperature to deposit a dielectric thin film on the substrate. 40. The CVD method according to claim 25, wherein the metalloamide source reagent compound is Hf(NMe2)4 and the aminosilane source reagent compound is Si(NMe2)3Cl.41. The CVD method according to claim 25, wherein the carrier gas is selected from the group consisting of: He, Ar, H2, N2 and O2.42. The CVD method according to claim 25, further comprising an oxidizing gas selected from the group consisting of: O2, N2O, NO and O3.43. The CVD method according to claim 42, wherein the oxidizing gas is N2O.44. The CVD method according to claim 25, further comprising an oxidizing gas, wherein the oxidizing gas is N2O.45. The CVD method according to claim 25, wherein the metalloamide source reagent compound is vaporized at a temperature in a range of from about 100° C. to about 300° C.46. The CVD method according to claim 25, wherein the temperature in the chemical vapor deposition zone is between about 350° C. to about 750° C.