IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0179151
(2002-06-24)
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발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
Schwegman, Lunderg, Woessner &
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인용정보 |
피인용 횟수 :
8 인용 특허 :
72 |
초록
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A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive structures are embedded in the foam
A conductive system and a method of forming an insulator for use in the conductive system is disclosed. The conductive system comprises a foamed polymer layer on a substrate. The foamed polymer layer has a surface that is hydrophobic, and a plurality of conductive structures are embedded in the foamed polymer layer. An insulator is formed by forming a polymer layer having a thickness on a substrate. The polymer layer is foamed to form a foamed polymer layer having a surface and a foamed polymer layer thickness, which is greater than the polymer layer thickness. The surface of the foamed polymer layer is treated to make the surface hydrophobic.
대표청구항
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1. A method of forming an insulator comprising:forming a material layer having a material layer thickness on a substrate at provides a base for fabricating one or more integrated circuits; foaming the material layer to form a foamed material layer having a surface and a foamed thickness, the foamed
1. A method of forming an insulator comprising:forming a material layer having a material layer thickness on a substrate at provides a base for fabricating one or more integrated circuits; foaming the material layer to form a foamed material layer having a surface and a foamed thickness, the foamed thickness being greater than the material layer thickness; treating the surface to make the surface hydrophobic; and forming an interconnection conductive structure for the one or more integrated circuits in the foamed material layer. 2. The method of claim 1, wherein forming a material layer having a thickness on a substrate comprises:forming a polymer layer on the substrate. 3. The method of claim 1, wherein forming a material layer having a thickness on a substrate comprises:applying an aerogel to the substrate; spinning the substrate; and curing the aerogel such that, after curing, the thickness is between about 0.6 microns and about 0.8 microns. 4. A method of forming an insulator comprising:forming a polymer layer on a substrate that provides a base for fabricating one or more integrated circuits; foaming the polymer layer to form a foamed polymer layer having a surface and a foamed polymer dielectric constant between about 0.8 and about 1.0; treating the surface to make the surface hydrophobic; and forming an interconnection conductive structure for the one or more integrated circuits in the foamed polymer layer. 5. The method of claim 4, wherein forming a polymer layer on substrate comprises:depositing polyimide containing silane on the substrate. 6. The method of claim 4, wherein foaming the polymer layer to form a foamed polymer layer having a surface and a foamed polymer dielectric constant between about 0.8 and 1.0 comprises:forming a foamed polymer layer having a depth of between about 1.8 and 2.0 microns. 7. The method of claim 4, wherein treating the surface to make the surface hydrophobic comprises:flowing methane radicals over the surface. 8. A method of forming an insulator comprising:forming a polymer layer on a substrate that provides a base for fabricating one or more integrated circuits; foaming the polymer layer with a supercritical fluid to form a foamed polymer layer having a surface and a foamed polymer dielectric constant between about 0.8 and 1.0; treating the surface to make the surface hydrophobic; and forming an interconnection conductive structure for the one or more integrated circuits in the foamed polymer layer. 9. The method of claim 8, wherein forming a polymer layer on a substrate comprises:forming a polyimide layer on the substrate. 10. The method of claim 8, wherein foaming the polymer layer with a supercritical fluid includes exposing the polymer layer to a CO2 supercritical fluid.11. The method of claim 8, wherein foaming the polymer layer with a supercritical fluid includes exposing the polymer layer to a supercritical fluid with a critical pressure below about 100 atmospheres and a critical temperature of about room temperature.12. The method of claim 8, wherein foaming the polymer layer with a supercritical fluid includes exposing the polymer layer to a supercritical fluid that is nontoxic and nonflammable.13. The method of claim 8, wherein foaming the polymer layer with a supercritical fluid includes exposing the polymer layer to a supercritical fluid selected from a group comprising NH3, NR3, ROH, H2O, CO2, N2O, He, Ne, Ar, HF, HCl, HBr, BCl3, Cl2, F2, O2, N2, CH4, C2H6, C3H8, C2H4, CO(OCH3)2, CF4, C2F4, CH3F, and C5H2F6O2.14. The method of claim 8, wherein the method further includes depressurizing after exposing the polymer layer to the supercritical fluid at a rate such that the polymer layer converts to the foamed polymer layer before substantial diffusion of the supercritical fluid out of the polymer layer occurs.15. A method of forming an insulator comprising:forming a polymer layer having a thickness on a substrate from a polymer having a silane additive, the substrate providing a base for fabricating one or more integrated circuits; foaming the polymer layer to form a foamed polymer layer having a surface and a foamed polymer layer thickness, the foamed polymer layer thickness is greater an the polymer layer thickness by a factor of about between about 2.8 and 3.2; treating the surface to make the surface hydrophobic; and forming an interconnection conductive structure for the one or more integrated circuits in the foamed polymer layer. 16. The method of claim 15, wherein forming a polymer layer includes forming a layer of parylene containing silane followed by a low temperature bake.17. The method of claim 15, wherein the method further includes curing the polymer layer before foaming the polymer layer.18. A method of forming an insulator comprising:forming a polymer layer having a thickness on a substrate from a polymer having a silane additive, the substrate providing a base for fabricating one or more integrated circuits; foaming the polymer layer to form a foamed polymer layer having a surface and a foamed polymer layer thickness, the foamed polymer layer thickness is greater than the polymer layer thickness; exposing the surface to a gas to make the surface hydrophobic; and forming an interconnection conductive structure for the one or more in grated circuits in the foamed polymer layer. 19. The method of claim 18, wherein exposing the surface to a as comprises:exposing the surface to methane. 20. The method of claim 18, wherein exposing the surface to a gas comprises:passing a methane gas through a plasma to form a plurality of methane radicals; and exposing the surface to at least some of the plurality of methane radicals. 21. A method of forming an insulator comprising:forming a polymer layer having a thickness on a substrate from a polymer having a silane additive, the substrate providing a base for fabricating one or more integrated circuits; foaming the polymer layer to form a foamed polymer layer having a surface, a cell size, and a foamed polymer layer thickness, the foamed polymer layer thickness is greater than the polymer layer thickness, and the cell size is less than about one-tenth of a micron; exposing the surface to a gas to make the surface hydrophobic; and forming an interconnection conductive structure for the one or more integrated circuits in the foamed polymer layer. 22. The method of claim 21, wherein exposing the surface to a gas includes exposing the surface to methane.23. The method of claim 21, wherein exposing the surface to a gas includes:passing a methane gas through a plasma to form a plurality of methane radicals; and exposing the surface to at least some of the plurality of methane radicals. 24. A method of forming an insulator comprising:forming an aerogel layer on a substrate that provides a base for fabricating one or more integrated circuits, foaming the aerogel layer to form a foamed aerogel layer having a surface; treating the surface to make the surface hydrophobic; and forming an interconnection conductive structure for the one or more integrated circuits in the foamed aerogel layer. 25. The method of claim 24, wherein forming an aerogel layer having a surface on a substrate comprises:forming an aerogel layer having a cell size of less than one micron. 26. The method of claim 24, wherein forming an aerogel layer having a surface on a substrate comprises:forming an aerogel layer having a cell size of less than one-tenth micron. 27. The method of claim 24, wherein treating the surface to make the surface hydrophobic comprises:exposing the surface to methane radicals. 28. The method of claim 24, wherein treating the surface to make the surface hydrophobic comprises:forming a plurality of methane radicals using a high frequency electric field; and exposing the surface to at least some of the plurality of methane radicals. 29. A method of forming a conductive structure comprising:forming a material layer having a material layer thickness on a substrate; foaming the material layer to form a foamed material layer having a surface and a foamed thickness, the foamed thickness being greater than the material layer thickness; treating the surface to make the surface hydrophobic; forming channels in the foamed material layer; and filling the channels with a metal. 30. The method of claim 29, wherein filling the channels with a metal includes filling the channels with a metal selected from a group consisting of silver, aluminum, gold, copper, tungsten, and alloys of silver, aluminum, gold, copper, and tungsten.31. The method of claim 29, wherein forming channels in the foamed material layer includes:applying a photoresist to the surface of the foamed material layer; forming patterns for the channels in the photoresist; and etching the photoresist. 32. A method of forming a conductive structure comprising:forming a polymer layer having a thickness on a substrate that provides a base for fabricating one or more integrated circuits, the polymer layer having a silane additive; foaming the polymer layer to form a foamed polymer layer having a surface and a foamed polymer layer thickness, the foamed polymer layer thickness greater than the polymer layer thickness; exposing the surface to a gas to make the surface hydrophobic; forming channels in the foamed material layer; and filling the channels with a metal. 33. The method of claim 32, wherein foaming the polymer layer includes forming a foamed polymer layer having a thickness of between about 1.8 and 2.0 microns.34. The method of claim 32, wherein foaming the polymer layer includes forming a foamed polymer layer of polyimide containing silane.35. The method of claim 34, wherein the method further include curing a layer of polyimide containing silane before foaming the layer of polyimide containing lane.36. A method of forming a conductive structure comprising:forming a foamed aerogel layer on a substrate that provides a base for fabricating one or more integrated circuits, the aerogel layer having a surface; treating the surface to make the surface hydrophobic; forming channels in the foamed aerogel layer; and filling the channels with a metal. 37. The method of claim 36, wherein forming a foamed aerogel layer includesapplying an aerogel to the substrate; spinning the substrate; and curing the aerogel. 38. The method of claim 36, wherein filling the channels with metal includes filling the channels with a metal selected from a group consisting of silver, aluminum, gold, copper, tungsten, and alloys of silver, aluminum, gold, copper, and tungsten.39. The method of claim 36, wherein forming channels in the foamed aerogel layer includes:applying a photoresist to the surface of the foamed material layer; forming patterns for the channels in the photoresist; and etching the photoresist.
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