초록 ▼

A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodi

A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.

대표청구항 ▼

1. A method for removing solid and/or liquid residues from a semiconductor substrate comprising the steps of:supplying a pressure vessel; supplying in the vessel a semiconductor substrate having a surface containing residues to be removed therefrom; supplying a material in the vessel at a pressure a

1. A method for removing solid and/or liquid residues from a semiconductor substrate comprising the steps of:supplying a pressure vessel; supplying in the vessel a semiconductor substrate having a surface containing residues to be removed therefrom; supplying a material in the vessel at a pressure and temperature so that the material is a liquid or the material is above the critical pressure and temperature so that the material is a supercritical fluid; lowering the temperature of the substrate surface so that the material contacting the surface of the substrate is converted to solid state on the substrate surface; changing the temperature and/or pressure in the vessel so that the material in the vessel is converted to a liquid and/or gaseous state; removing the material and residues from the vessel; and removing the semiconductor substrate from the vessel. 2. The method of claim 1 wherein the material is carbon dioxide.3. The method of claim 2 wherein the carbon dioxide contains a surfactant.4. The method of claim 2 wherein the carbon dioxide is used in admixture with one or more of Ar, NH3, CH4, CHF3, C2H6, n-C3H8, H2O and N2O.5. The method of claim 2 wherein the carbon dioxide is in the supercritical state.6. The method of claim 1 wherein the steps of lowering the temperature of the substrate surface to convert the material to the solid state and changing the temperature and/or pressure to convert the material to the liquid and/or gaseous state is repeated one or more times.7. An apparatus for removing solid and/or liquid residues from a semiconductor substrate comprising:a pressure vessel adapted to hold therein a semiconductor wafer substrate having a surface; means for supplying a material to the pressure vessel; means for adjusting temperature and pressure in the pressure vessel so that the material is converted to a liquid state or supercritical state; means for lowering the temperature of the substrate surface so that material in contact with the substrate surface is converted to a solid state on the semiconductor substrate surface; means for adjusting the temperature and pressure in the pressure vessel so that the material is converted to the liquid and/or gaseous state; means for removing the material from the pressure vessel; wherein when the material is converted to a solid state on the substrate surface and then converted to the liquid and/or gaseous state, residues on the semiconductor substrate surface are removed. 8. The apparatus of claim 7 wherein the material is carbon dioxide.9. The apparatus of claim 8 wherein the carbon dioxide is in the supercritical state.10. The apparatus of claim 9 wherein means are provided for repeating one or more times lowering of the temperature to convert the carbon dioxide in contact with the substrate surface to the solid state and for adjusting the temperature and pressure to convert the carbon dioxide in the pressure vessel to the liquid and/or gaseous state.