초록 ▼

A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate

A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.

대표청구항 ▼

1. A method for manufacturing an integrated circuit comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate

1. A method for manufacturing an integrated circuit comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate. 2. A method for manufacturing an integrated circuit according to claim 1, wherein said surface is polished by chemical mechanical polishing.3. A method for manufacturing an integrated circuit according to claim 1, wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.4. A method for manufacturing an integrated circuit according to claim 1, wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.5. A method for manufacturing an integrated circuit according to claim 1, wherein said integrated circuit is an electroluminenscence display unit.6. A method for manufacturing an integrated circuit according to claim 1, wherein said integrated circuit is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.7. A method for manufacturing an integrated circuit comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region. 8. A method for manufacturing an integrated circuit according to claim 7, wherein said surface is polished by chemical mechanical polishing.9. A method for manufacturing an integrated circuit according to claim 7, wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.10. A method for manufacturing an integrated circuit according to claim 7, wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.11. A method for manufacturing an integrated circuit according to claim 7, wherein said integrated circuit is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.12. A method for manufacturing an integrated circuit comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; removing said porous present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region, a lightly doped drain region and a channel region; forming an interlayer insulating film to cover said gate electrode and said island-like semiconductor layer; forming a source wiring and a drain wiring in contact with said source region and said drain region, respectively. 13. A method for manufacturing an integrated circuit according to claim 12, wherein said surface is polished by chemical mechanical polishing.14. A method for manufacturing an integrated circuit according to claim 12, wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.15. A method for manufacturing an integrated circuit according to claim 12, wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.16. A method for manufacturing an integrated circuit according to claim 12, wherein said integrated circuit is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.17. A method for manufacturing an integrated circuit comprising the steps of:forming a mask on one surface of a single-crystal semiconductor substrate; converting a portion of said one surface into at least one porous layer by using an anodizing treatment, wherein said mask is not formed on said portion; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate. 18. A method for manufacturing an integrated circuit according to claim 17, wherein the step of forming said first silicon oxide layer is followed by a step of flattening said first silicon oxide layer.19. A method for manufacturing an integrated circuit according to claim 17, wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.20. A method for manufacturing an integrated circuit according to claim 17, wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.21. A method for manufacturing an integrated circuit according to claim 17, wherein said integrated circuit is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.22. A method for manufacturing an integrated circuit comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; performing a second heat treatment of said supporting substrate at 900-1200° C.; and removing said porous layer present over said supporting substrate. 23. A method for manufacturing an integrated circuit according to claim 22, wherein said surface is polished by chemical mechanical polishing.24. A method for manufacturing an integrated circuit according to claim 22, wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.25. A method for manufacturing an integrated circuit according to claim 22, wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.26. A method for manufacturing an integrated circuit comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer; adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; and removing said porous layer present over said supporting substrate. 27. A method for manufacturing an integrated circuit comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate; patterning said insulating film, thereby selectively forming a mask; converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment; removing said mask; forming a first silicon oxide layer on said one surface; polishing a surface of said first silicon oxide layer; adding hydrogen into said single-crystal semiconductor substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer, adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon; performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer; removing said porous layer present over said supporting substrate, thereby forming at least one island-like semiconductor layer over said supporting substrate; forming a gate electrode over said island-like semiconductor layer; and introducing a p-type or an n-type impurity into said island-like semiconductor layer to form at least a source region, a drain region and a channel region. 28. A method for manufacturing an integrated circuit according to claim 26, wherein said surface is polished by chemical mechanical polishing.29. A method for manufacturing an integrated circuit according to claim 27, wherein said surface is polished by chemical mechanical polishing.30. A method for manufacturing an integrated circuit according to claim 26, wherein the step of forming said mask is designed to form in a region which becomes afterward an active region of a thin film transistor.31. A method for manufacturing an integrated circuit according to claim 27, wherein the step of forming said mask is designed to form in a region which becomes afterward said island-like semiconductor layer constituting a thin film transistor.32. A method for manufacturing an integrated circuit according to claim 26, wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.33. A method for manufacturing an integrated circuit according to claim 27, wherein said supporting substrate is selected from the group consisting of a semiconductor substrate, a quartz substrate, a ceramic substrate, a metal substrate, and a stainless steel substrate.34. A method for manufacturing an integrated circuit according to claim 26, wherein said integrated circuit is a display unit incorporated in one selected from a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.35. A method for manufacturing an integrated circuit according to claim 27, wherein said integrated circuit is a display unit incorporated in one selected from a group consisting of a personal computer, a video camera, a mobile computer, a digital camera, a player for a recording medium, a goggle type display, a front type projector and a rear type projector.