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Fluorine process for cleaning semiconductor process chamber

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B08B-009/00
출원번호 US-0430955 (2003-05-05)
발명자 / 주소
  • Goto, Haruhiro Harry
  • Harshbarger, William R.
  • Shang, Quanyuan
  • Law, Kam S.
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Moser, Patterson &
인용정보 피인용 횟수 : 6  인용 특허 : 94

초록

A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fl

대표청구항

1. A process for removing amorphous silicon residue from at least one surface of one or more chamber components exposed to the interior of a semiconductor or flat panel display process chamber, comprising:supplying a gas consisting of molecular fluorine to the process chamber; and elevating the temp

이 특허에 인용된 특허 (94)

  1. Shankar N. Chandran ; Scott Hendrickson ; Gwendolyn D. Jones ; Shankar Venkataraman ; Ellie Yieh, Accelerated plasma clean.
  2. Langley Rod C., Anisotropic etch method.
  3. Steger Robert J. ; Redeker Fred C., Apparatus and method for cleaning of semiconductor process chamber surfaces.
  4. Dyer Timothy Scott, Apparatus and method for removing silicon dioxide residues from CVD reactors.
  5. Shang Quanyuan ; Robertson Robert McCormick ; Law Kam S. ; Maydan Dan, Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology.
  6. Jackson Robert M. ; Esser Craig ; Serdahl Eric ; Gregg John N., Chemical delivery system employing containment crate.
  7. Nagashima Makoto (Machida JPX) Kobayashi Naoaki (Sakura CA JPX) Wong Jerry (Fremont CA), Cleaning method for semiconductor wafer processing apparatus.
  8. Guo Xin S. (Mountain View CA), Cleaning of a PVD chamber containing a collimator.
  9. Chang Mei (Cupertino CA), Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus.
  10. Shang Quanyuan ; Law Kam S. ; Maydan Dan, Deposition chamber cleaning technique using a high power remote excitation source.
  11. Ishikawa Tetsuya ; Staryuk Pavel ; Hanawa Hiroji, Dome: shape and temperature controlled surfaces.
  12. Ye Yan (Campbell CA) Rhoades Charles Steven (Los Gatos CA) Yin Gerald Z. (Cupertino CA), Dry cleaning of semiconductor processing chambers.
  13. Sekine Makoto (Yokohama JPX) Okano Haruo (Tokyo JPX) Horiike Yasuhiro (Tokyo JPX), Dry etching process.
  14. Faron Robert (Nyons FRX) Cathala Annie (Livron FRX), Electrolyte and process for electrolytic production of fluorine.
  15. Grant ; Albert E. ; Wainwright ; Stanley, Electrolytic production of fluorine.
  16. Tarancon Gregorio, Electrolyzer.
  17. Pister Kristofer S. J., Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making.
  18. Araki Yoichi,JPX ; Inazawa Koichiro,JPX ; Furuya Sachiko,JPX ; Ogasawara Masahiro,JPX ; Koshimizu Chishio,JPX ; Song Tiejun,JPX, Etching process.
  19. Cook Joel M. (Union Township ; Hunterdon County NJ) Donnelly Vincent M. (Berkeley Heights NJ) Flamm Daniel L. (Chatham Township ; Morris County NJ) Ibbotson Dale E. (Westfield NJ) Mucha John A. (Madi, Etching techniques.
  20. Gupta Anand ; Bhan Mohan ; Subrahmanyam Sudhakar, Film to tie up loose fluorine in the chamber after a clean process.
  21. Hodgson Graham (Preston GBX) Hearne Martin P. (Preston GBX), Fluorine cell.
  22. Bhardwaj, Jyoti Kiron; Shepherd, Nicholas; Lea, Leslie Michael, Gas delivery system.
  23. Syverson Daniel J. (Robbinsdale MN) Novak Richard E. (Plymouth MN), HF gas etching of wafers in an acid processor.
  24. Karwacki Eugene J. (Orefield PA) Varn Arron D. (Macungie PA) Withers ; Jr. Howard P. (Breinigsville PA) Woytek Andrew J. (Allentown PA), Handling and delivery system for dangerous gases.
  25. Jang Syun-Ming,TWX ; Huang Ming-Hsin,TWX, Hard masking method for forming oxygen containing plasma etchable layer.
  26. White John M. ; Chang Larry, Heated substrate support structure.
  27. Claes Bjorkman ; Hongching Shan ; Michael Welch, High selectivity etch using an external plasma discharge.
  28. Youichi Nakamura JP, Image reading method and apparatus.
  29. Watatani Hirofumi (Kawasaki JPX) Doki Masahiko (Kawasaki JPX) Okuda Shoji (Kasugai JPX) Nakahira Junya (Kawasaki JPX) Kikuchi Hideaki (Kawasaki JPX), In-situ cleaning of plasma treatment chamber.
  30. Chang Mei (Cupertino CA) Wang David N. K. (Cupertino CA) White John M. (Hayward CA) Maydan Dan (Los Altos Hills CA), Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films.
  31. Ashley Ethan (Santa Clara CA), Interhalogen cleaning of process equipment.
  32. Yu Chen-Hua,TWX, Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluor.
  33. Van Autryve Luc,FRX ; Lang Stefan Oswald,DEX, Localizing cleaning plasma for semiconductor processing.
  34. Hattori Kei,JPX ; Kobayashi Akira,JPX ; Nonaka Mikio,JPX ; Muto Makoto,JPX ; Kasai Masaru,JPX ; Onoda Toshiyasu,JPX ; Yoshimori Tomoaki,JPX, Metal film etching method.
  35. Ye Yan ; Ma Diana Xiaobing ; Yin Gerald Zheyao ; Prasad Keshav ; Siegel Mark ; Mak Steve S. Y. ; Martinez Paul ; Papanu James S. ; Lu Danny Chien, Method and apparatus for cleaning by-products from plasma chamber surfaces.
  36. Loewenstein Lee M. (Plano TX) Webb Douglas A. (Allen TX), Method and apparatus for etching semiconductor materials.
  37. Keil Mark (801 Nancy Lynn Ter. Norman OK 73069) Young Joel H. (7510 E. Lindsey Norman OK 73071) Copeland Kyle (609 Stinson ; Apt. B Norman OK 73072), Method and apparatus for etching surfaces with atomic fluorine.
  38. Doi Kenji,JPX ; Katakabe Ichiro,JPX ; Miyashita Naoto,JPX, Method and apparatus for manufacturing a semiconductor device.
  39. Thomas Nowak ; Sebastien Raoux ; Dave Silvetti ; Stefan Wolff ; Russ Newman ; Imad Yousif ; Ned Matthew, Method and apparatus for optical detection of effluent composition.
  40. Robertson Robert (Palo Alto CA) Law Kam S. (Union City CA) White John M. (Hayward CA), Method and apparatus for protection of conductive surfaces in a plasma processing reactor.
  41. Mayer, Bruce E.; Chatham, III, Robert H.; Ingle, Nitin K.; Yuan, Zheng, Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries.
  42. Ward Steven D. (Phoenix AZ) Avona Paul V. (Phoenix AZ), Method for cleaning a process chamber.
  43. Loewenstein Lee M. (Plano TX) Davis Cecil J. (Greenville TX) Jucha Rhett B. (Celeste TX), Method for etch of polysilicon film.
  44. Takiyama Makoto,JPX ; Fujikake Hideki,JPX, Method for fabricating semiconductor device.
  45. Kao Chien-Teh ; Littau Karl Anthony ; Vasudev Anand ; Koo Dong Won, Method for improved cleaning of substrate processing systems.
  46. Kao Chien-Teh ; Tsai Kenneth ; Pham Quyen ; Rose Ronald L. ; Augason Calvin R. ; Yudovsky Joseph, Method for improved remote microwave plasma source for use with substrate processing system.
  47. Watanabe Nobuatsu (136 Uguisudai ; Nagaokakyo-shi ; Kyoto JPX) Aramaki Minoru (Ube JPX) Kita Yasushi (Ube JPX), Method for producing fluorine.
  48. Hayasaka Nobuo (Kanagawa JPX) Arikado Tsunetoshi (Tokyo JPX) Okano Haruo (Tokyo JPX) Horioka Keiji (Kanagawa JPX), Method for removing composite attached to material by dry etching.
  49. Molloy Simon John ; Vitkavage Daniel Joseph, Method for removing etching residues and contaminants.
  50. Xia Li-Qun ; Pokharrna Himanshu ; Lim Tian-Hoe, Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process.
  51. Wong Man, Method for vapor phase wafer cleaning.
  52. Danny Chien Lu ; Allen Zhao ; Peter Hsieh ; Hong Shih ; Li Xu ; Yan Ye, Method of cleaning a semiconductor device processing chamber after a copper etch process.
  53. Tahara Yoshifumi (Yamato JPX) Hirano Yoshihisa (Yokohama JPX) Hasegawa Isahiro (Zushi JPX) Horioka Keiji (Kawasaki JPX), Method of etching object to be processed including oxide or nitride portion.
  54. Barnes Michael S. (San Francisco CA) Yasuda Arthur Kenichi (Belmont CA), Method of in situ cleaning a vacuum plasma processing chamber.
  55. Zijlstra Piebe A. (Nijmegen NLX), Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the re.
  56. Nicolas Francois (Orange FRX), Method of treating gas based on electrolytic fluorine containing uranium compounds.
  57. Fukuda Takuya (Hitachi JPX) Sato Junji (Hitachi JPX) Kanai Fumiyuki (Hoya JPX) Tsuchiya Atsushi (Hitachi JPX), Microwave plasma processing apparatus.
  58. Merry Walter Richardson ; Brown William ; Herchen Harald ; Welch Michael D., Microwave-activated etching of dielectric layers.
  59. Tarancon Gregorio (High Springs FL), Nitrogen trifluoride process.
  60. Odajima Hideki (Osaka JPX) Nogami Chitoshi (Osaka JPX) Suzuki Masanori (Moriyama JPX) Saeda Manabu (Moriyama JPX), Non-plasma cleaning method for semiconductor manufacturing apparatus.
  61. Jones Fletcher (Ossining NY) Muroski ; Jr. Kenneth J. (Millbrook NY) Robinson Bennett (New York NY), Plasma CVD apparatus and processes.
  62. Trow John ; Ishikawa Tetsuya, Plasma confinement for an inductively coupled plasma reactor.
  63. Chu Po-Tao,TWX ; Yeh Ming-Chieh,TWX ; Chen Fang-Cheng,TWX ; Lu Ting-Yih,TWX, Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers.
  64. Lee Shing-Long,TWX ; Tsai Chia Shiung,TWX ; Kuo So Wein,TWX, Plasma etch method for forming residue free fluorine containing plasma etched layers.
  65. Yanagisawa Michihiko,JPX ; Iida Shinya,JPX, Plasma etching method.
  66. Shahvandi Iraj E. (Round Rock TX) Gelatos Carol (Austin TX) Grant ; Jr. Leroy (Austin TX), Plasma etching process.
  67. Kuo So-Wen,TWX ; Hou Chin-Shan,TWX ; Chang Yung Jung,TWX, Plasma method for stripping ion implanted photoresist layers.
  68. Leung Cissy S. ; Lei Lawrence Chung-Lai ; Somekh Sasson, Plasma-inert cover and plasma cleaning process.
  69. Chen Chao-Cheng,TWX, Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesqu.
  70. Hodgson Graham (Lancashire GB2), Process and an electrolytic cell for the production of fluorine.
  71. Xi Ming ; Nishina Kazuhiro,JPX ; Chen Steve (Aihua) ; Fujita Toshiaki,JPX, Process for chlorine trifluoride chamber cleaning.
  72. Shin Teshiki (Kawasaki JPX), Process for dry etching a silicon nitride layer.
  73. Sievert Allen C. (Elkton MD), Process for the manufacture of hydrofluorocarbons.
  74. Liu Jiann (Irving TX) Davis Cecil J. (Greenville TX) Loewenstein Lee M. (Plano TX), Processing apparatus.
  75. Fernando Gonzalez ; Randhir P. S. Thakur, Rapid thermal etch and rapid thermal oxidation.
  76. Tao Hun-Jan,TWX ; Tsai Chia-Shiung,TWX, Reactive ion etch method for forming vias through nitrogenated silicon oxide layers.
  77. Law Kam S. (Union City CA) Leung Cissy (Fremont CA) Tang Ching C. (San Francisco CA) Collins Kenneth S. (San Jose CA) Chang Mei (Cupertino CA) Wong Jerry Y. K. (Union City CA) Wang David Nin-Kou (Cup, Reactor chamber self-cleaning process.
  78. Keller Alfred E. (Ponca City OK), Recovery of HF from hydrocarbon streams.
  79. Fairbairn Kevin ; Ponnekanti Hari K. ; Cheung David ; Tanaka Tsutomu,JPX ; Kelka Malcal, Remote plasma source.
  80. Maydan Dan ; Nowak Romuald ; Sinha Ashok K., Remote plasma source for chamber cleaning.
  81. Merchant Dhirendra Ranchhoddas (Paducah KY) Hodges Jimmie Ray (Benton KY), Removal of hydrogen fluoride from gaseous mixture by absorption on alkaline earth metal fluoride.
  82. Haruhiro Harry Goto ; William R. Harshbarger ; Kam S. Law, Selectively etching silicon using fluorine without plasma.
  83. Takehisa Yamaguchi JP; Akio Nakayama JP, Semiconductor TFT, producing method thereof, semiconductor TFT array substrate and liquid crystal display using the same.
  84. Herchen Harald ; Brown William ; Nzeadibe Ihi ; Kujaneck Dan, Substrate process chamber and processing method.
  85. Gupta Anand ; Ponnekanti Srihari ; Rimple Gana A. ; Murugesh Laxman, Substrate processing system configurable for deposition or cleaning.
  86. Matsunaga Daisuke,JPX ; Hashimi Kazuo,JPX ; Komuro Genichi,JPX, Successive dry etching of alternating laminate.
  87. Kennard Mark A., Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system.
  88. Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
  89. Gerald Zheyao Yin ; Xue-Yu Qian ; Patrick L. Leahey ; Jonathan D. Mohn ; Waiching Chow ; Arthur Y. Chen ; Zhi-Wen Sun ; Brian K. Hatcher, Treatment of etching chambers using activated cleaning gas.
  90. Wang, Xikun; Williams, Scott; Pan, Shaoher X., Two-stage self-cleaning silicon etch process.
  91. Gray David C. (Sunnyvale CA) Butterbaugh Jeffery W. (Chanhassen MN), UV-enhanced dry stripping of silicon nitride films.
  92. Fayfield Robert T. ; Schwab Brent D., UV/halogen treatment for dry oxide etching.
  93. Tang Sanh D., Using silicide cap as an etch stop for multilayer metal process and structures so formed.
  94. Watanabe Hirohito,JPX ; Kyogoku Mitsusuke,JPX, Vapor selective etching method and apparatus.

이 특허를 인용한 특허 (6)

  1. Dimeo, Frank; Dietz, James; Olander, W. Karl; Kaim, Robert; Bishop, Steven; Neuner, Jeffrey W.; Arno, Jose; Marganski, Paul J.; Sweeney, Joseph D.; Eldridge, David; Yedave, Sharad; Byl, Oleg; Stauf, Gregory T., Cleaning of semiconductor processing systems.
  2. Sweeney, Joseph D.; Yedave, Sharad N.; Byl, Oleg; Kaim, Robert; Eldridge, David; Feng, Lin; Bishop, Steven E.; Olander, W. Karl; Tang, Ying, Ion source cleaning in semiconductor processing systems.
  3. Chang,Won Kie; Lee,Jin Wook; Song,Won; Yoo,Jeong Sik; Kim,You Keun; Choi,Dong Uk, Method for manufacturing thin film transistor array panel.
  4. DiMeo, Jr., Frank; Dietz, James; Olander, W. Karl; Kaim, Robert; Bishop, Steven E.; Neuner, Jeffrey W.; Arno, Jose I., Methods for cleaning ion implanter components.
  5. Sekiya,Akira; Mitsui,Yuki; Ohira,Yutaka; Yonemura,Taisuke, Plasma cleaning gas and plasma cleaning method.
  6. Reiner, Maria; Ostermaier, Clemens; Lagger, Peter; Prechtl, Gerhard; Haeberlen, Oliver; Schellander, Josef; Denifl, Guenter; Stadtmueller, Michael, Surface treatment of semiconductor substrate using free radical state fluorine particles.
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