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Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluid

Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

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1. A method of minimizing the accumulation of bubbles upon a wafer during an electroless deposition process, comprising:loading the wafer into an electroless deposition chamber; scaling the electroless deposition chamber to form an enclosed area about the wafer; supplying a deposition solution to th

1. A method of minimizing the accumulation of bubbles upon a wafer during an electroless deposition process, comprising:loading the wafer into an electroless deposition chamber; scaling the electroless deposition chamber to form an enclosed area about the wafer; supplying a deposition solution to the enclosed area; and agitating tho deposition solution to create an amount of motion sufficient to form a layer having substantially uniform thickness, wherein the step of agitating comprises pulsing the deposition solution from a spray bar. 2. The method of claim 1, further comprising pressurizing the enclosed area to a predetermined value.3. The method of claim 2, wherein the predetermined value is between approximately 5 psi and approximately 100 psi.4. The method of claim 2, wherein the steps of agitating and pressurizing collectively reduce the amount of bubbles formed upon the wafer during the electroless deposition process.5. The method of claim 1, wherein the step of loading the wafer comprises positioning the wafer face-up within the electroless deposition chamber.6. The method of claim 1, wherein the step of agitating comprises spraying the deposition solution at a rate between approximately 0.1 gallons per minute and approximately 10 gallons per minute.7. The method of claim 1, wherein the step of pulsing comprises pulsing the spray at a frequency between approximately 0.1 Hz and about 10 KHz.8. The method of claim 1, wherein the step of agitating comprises exposing the deposition solution to acoustic waves.9. The method of claim 8, wherein the step of agitating comprises propagating the acoustic waves at an angle between approximately 0° and approximately 90° relative to a treating surface of the wafer.10. The method of claim 8, wherein the acoustic waves comprise ultrasonic waves.11. The method of claim 8, wherein the acoustic waves comprise megasonic waves.12. The method of claim 1, wherein the step of agitating comprises moving a device through the deposition solution and above the wafer.13. The method of claim 12, wherein the step of moving the device comprises sweeping a brush through the deposition solution and above the wafer.14. The method of claim 13, wherein the step of sweeping the brush comprises sweeping the brush in contact with an upper surface of the wafer.