초록 ▼

A method of measuring the transistor leakage current. In one embodiment, the method involves driving a ring oscillator with a dynamic node driver having a leakage test device biased to an off state to produce a test signal. The test signal is extracted and the frequency is measured. The leakage curr

A method of measuring the transistor leakage current. In one embodiment, the method involves driving a ring oscillator with a dynamic node driver having a leakage test device biased to an off state to produce a test signal. The test signal is extracted and the frequency is measured. The leakage current is estimated from the measured frequency.

대표청구항 ▼

1. A method of estimating leakage current, said method comprising:driving a ring oscillator with a dynamic node driver, said dynamic node driver comprising: a pre-charge device; and a leakage test device, said leakage test device biased to an off state with said pre-charge device coupled to said lea

1. A method of estimating leakage current, said method comprising:driving a ring oscillator with a dynamic node driver, said dynamic node driver comprising: a pre-charge device; and a leakage test device, said leakage test device biased to an off state with said pre-charge device coupled to said leakage test device at a dynamic node; extracting a test signal from said ring oscillator; measuring a test frequency from said test signal; and estimating a leakage current of said leakage test device from said test frequency. 2. The method of claim 1 wherein said ring oscillator further comprises a delay unit.3. The method of claim 1 wherein said ring oscillator further comprises a differential amplifier.4. The method of claim 1 wherein said measuring includes conditioning said test signal.5. The method of claim 1 wherein said ring oscillator comprises a loop delay, and further comprising:generating a reference signal with a reference oscillator having a comparable loop delay; and measuring a reference frequency from said reference signal. 6. The method of claim 1 wherein said leakage test device measures a transistor leakage current.7. The method of claim 1 wherein said leakage test device measures a gate leakage current.