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A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable

A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.

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1. A method of manufacturing a semiconductor device comprising the steps of:forming a silicon nitride film containing at least one of hydrogen and oxygen over a substrate by using a CVD system; forming a semiconductor film comprising amorphous silicon on said silicon nitride film; forming a silicon

1. A method of manufacturing a semiconductor device comprising the steps of:forming a silicon nitride film containing at least one of hydrogen and oxygen over a substrate by using a CVD system; forming a semiconductor film comprising amorphous silicon on said silicon nitride film; forming a silicon oxide film on said semiconductor film; disposing a solution in contact with said silicon oxide film, said solution containing a metal being capable of promoting crystallization of said semiconductor film; heating said semiconductor film and said metal to crystallize said semiconductor film; and irradiating laser beam to said semiconductor film to improve the crystallinity thereof. 2. A method according to claim 1 wherein said CVD system is selected from a plasma CVD system and an LPCVD system.3. A method according to claim 1 wherein said metal is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony.4. A method according to claim 1 wherein said silicon nitride film is in contact with said semiconductor film.5. A method according to claim 1 wherein said semiconductor film does not orient along a crystallographic (111) plane.6. A method of manufacturing a semiconductor device comprising the steps of:forming a silicon nitride film containing at least one of hydrogen and oxygen over a substrate by using a CVD system; forming a semiconductor film comprising amorphous silicon on said silicon nitride film; forming a silicon oxide film on said semiconductor film; disposing a solution comprising a metal compound in contact with said silicon oxide film; heating said semiconductor film to crystallize said semiconductor film; and irradiating laser beam to said semiconductor film to improve the crystallinity thereof. 7. A method according to claim 6 wherein said CVD system is selected from a plasma CVD system and an LPCVD system.8. A method according to claim 6 wherein said metal compound is selected from the group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetylacetonate, nickel 4-cyclohexybutyrate, and nickel hydroxide.9. A method according to claim 6 wherein said silicon nitride film is in contact with said semiconductor film.10. A method according to claim 6 wherein said semiconductor film does not orient along a crystallographic (111) plane.11. A method of manufacturing a semiconductor device comprising the steps of:forming a silicon nitride film containing at least one of hydrogen and oxygen over a substrate; forming a semiconductor film comprising amorphous silicon on said silicon nitride film; forming a silicon oxide film on said semiconductor film; disposing a solution in contact with said silicon oxide film, said solution containing a metal being capable of promoting crystallization of said semiconductor film; and heating said semiconductor film and said metal to crystallize said semiconductor film. 12. A method according to claim 11 wherein said metal is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony.13. A method according to claim 11 wherein said semiconductor film does not orient along a crystallographic (111) plane.14. A method of manufacturing a semiconductor device comprising the steps of:forming a silicon nitride film containing at least one of hydrogen and oxygen over a substrate; forming a semiconductor film comprising amorphous silicon on said silicon nitride film; forming a silicon oxide film on said semiconductor film; disposing a solution in contact with said silicon oxide film, said solution containing a metal being capable of promoting crystallization of said semiconductor film; heating said semiconductor film and said metal to crystallize said semiconductor film; and irradiating laser beam to said semiconductor film to improve the crystallinity thereof. 15. A method according to claim 14 wherein said metal is selected from the group consisting of nickel, palladium, platinum, copper, silver, gold, indium, tin, phosphorous, arsenic and antimony.16. A method according to claim 14 wherein said semiconductor film does not along a crystallographic (111) plane.17. A method of manufacturing a semiconductor device comprising the steps of:forming a silicon nitride film containing at least one of hydrogen and oxygen over a substrate; forming a semiconductor film comprising amorphous silicon on said silicon nitride film; forming a silicon oxide film on said semiconductor film; disposing a solution comprising a metal compound in contact with said silicon oxide film; and heating said semiconductor film to crystallize said semiconductor film. 18. A method according to claim 17 wherein said metal compound is selected from the group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetylacetonate, nickel 4-cyclohexybutyrate, and nickel hydroxide.19. A method according to claim 17 wherein said semiconductor film does not orient along crystallographic (111) plane.20. A method of manufacturing a semiconductor device comprising the steps of:forming a silicon nitride film containing at least one of hydrogen and oxygen over a substrate; forming a semiconductor film comprising amorphous silicon on said silicon nitride film; forming a silicon oxide film on said semiconductor film; disposing a solution comprising a metal compound in contact with said silicon oxide film; heating said semiconductor film to crystallize said semiconductor film; and irradiating laser beam to said semiconductor film to improve the crystallinity thereof. 21. A method according to claim 20 wherein said metal compound is selected from the group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetylacetonate, nickel 4-cyclohexybutyrate, and nickel hydroxide.22. A method according to claim 20 wherein said semiconductor film does not orient along crystallographic (111) plane.