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Ferroelectric transistor for storing two data bits

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-011/22
출원번호 US-0305205 (2002-11-26)
발명자 / 주소
  • Dimmler, Klaus
  • Gnadinger, Alfred P.
출원인 / 주소
  • COVA Technologies, Inc.
대리인 / 주소
    Hogan &
인용정보 피인용 횟수 : 4  인용 특허 : 104

초록

A method of storing and accessing two data bits in a single ferroelectric FET includes selectively polarizing two distinct ferroelectric regions in the same gate dielectric layer separated by a non-ferroelectric dielectric region. A first ferroelectric region is sandwiched between the substrate and

대표청구항

1. A non-volatile memory storage method comprising:providing an array of field effect transistors (FETs), wherein each FET in the array has a gate, drain, source, and substrate terminals, a first ferroelectric region between the gate and the source, and a second ferroelectric region between the gate

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이 특허를 인용한 특허 (4)

  1. Van Houdt, Jan, Non-volatile memory cell having pinch-off ferroelectric field effect transistor.
  2. Shuto, Susumu; Okada, Takayuki; Kunishima, Iwao, Semiconductor memory device.
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