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A silicon oxide film formed on a compound semiconductor substrate is evaluated by estimating the quantity of silicon-silicon bonds operating as electron traps in the silicon oxide film from a peak with a wave number of 880/centimeter in the Fourier-transform infrared spectrum of the silicon oxide fi

A silicon oxide film formed on a compound semiconductor substrate is evaluated by estimating the quantity of silicon-silicon bonds operating as electron traps in the silicon oxide film from a peak with a wave number of 880/centimeter in the Fourier-transform infrared spectrum of the silicon oxide film. This peak, which is an indicator of silicon-silicon stretching vibration, provides an index of expected power performance degradation during operation of field-effect transistors incorporating the silicon oxide film as an interlayer. Power degradation can be reduced by fabricating the semiconductor device under conditions that reduce the estimated quantity of silicon-silicon bonds, without the need to measure the power degradation.

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1. A method of fabricating a semiconductor device including a field-effect transistor (FET) having a silicon oxide interlayer film formed on a compound semiconductor substrate, the method comprising:forming a silicon oxide film on a first compound semiconductor substrate; analyzing the silicon oxide

1. A method of fabricating a semiconductor device including a field-effect transistor (FET) having a silicon oxide interlayer film formed on a compound semiconductor substrate, the method comprising:forming a silicon oxide film on a first compound semiconductor substrate; analyzing the silicon oxide film by FT-IR spectroscopy to obtain an FT-IR spectrum; estimating a quantity of silicon-silicon bonds operating as electron traps from a peak with a wave number of 880 cm?1 in the FT-IR spectrum, indicating silicon-silicon stretching vibration; determining a fabrication process condition for forming the silicon oxide interlayer film so as to reduce the quantity of silicon-silicon bonds therein; forming the silicon oxide interlayer film on a second compound semiconductor substrate according to the determined fabrication process condition; and forming the FET on the second compound semiconductor substrate, incorporating the silicon oxide interlayer film. 2. The method of claim 1, wherein the quantity of the silicon-silicon bonds is estimated from an area of said peak.3. The method of claim 2, wherein estimating the quantity of silicon-silicon bonds comprises comparing an area of said peak with an area of another peak, having a different wave number, indicating silicon-oxygen stretching vibration.4. The method of claim 3, wherein said another peak has a wave number of 810 cm?1.5. The method of claim 2, wherein said fabrication process condition is a gas flow rate.6. The method of claim 2, wherein said fabrication process condition is a gas film fabrication temperature.7. The method of claim 2, wherein said fabrication process condition is a gas film fabrication pressure.8. The method of claim 2, wherein said fabrication process condition is a thickness of the silicon oxide interlayer film.9. A method of fabricating a semiconductor device, including a FET having a silicon oxide interlayer film formed on a compound semiconductor substrate, the method comprising:forming the silicon oxide interlayer film on the compound semiconductor substrate; analyzing the silicon oxide interlayer film by FT-IR spectroscopy to obtain an FT-IR spectrum; estimating a quantity of silicon-silicon bonds operating as electron traps in the silicon oxide interlayer film from a peak with a wave number of 880 cm?1 in the FT-IR characteristic, indicating silicon-silicon stretching vibration; and using the estimated quantity as an index of expected power performance degradation during operation of the FET. 10. The method of claim 9, wherein the quantity of the silicon-silicon bonds is estimated from the area of said peak.11. The method of claim 10, wherein estimating the quantity of silicon-silicon bonds comprises comparing an area of said peak with an area of another peak, having a different wave number, indicating silicon-oxygen stretching vibration.