Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/48
H01L-021/50
출원번호
US-0619918
(2003-07-15)
발명자
/ 주소
Farnworth, Warren M.
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
TraskBritt, PC
인용정보
피인용 횟수 :
1인용 특허 :
81
초록▼
A stereolithographically fabricated, substantially hermetic package surrounds at least a portion of a semiconductor die so as to substantially hermetically seal the same. Stereolithographic processes may be used to fabricate at least a portion of the substantially hermetic package from thermoplastic
A stereolithographically fabricated, substantially hermetic package surrounds at least a portion of a semiconductor die so as to substantially hermetically seal the same. Stereolithographic processes may be used to fabricate at least a portion of the substantially hermetic package from thermoplastic glass, other types of glass, ceramics, or metals. The substantially hermetic package may be used with semiconductor device assemblies or with bare or minimally packaged semiconductor dice, including dice that have yet to be singulated from a wafer. The stereolithographic method may include use of a machine vision system including at least one camera operably associated with a computer controlling a stereolithographic application of material so that the system may recognize the position, orientation, and features of a semiconductor device assembly, semiconductor die, or other substrate on which the substantially hermetic package is to be fabricated.
대표청구항▼
1. A method of fabricating a substantially hermetic package, comprising:placing at least one semiconductor device with a surface thereof in a horizontal plane; and stereolithographically fabricating a substantially hermetic package on the surface of the at least one semiconductor device, the substan
1. A method of fabricating a substantially hermetic package, comprising:placing at least one semiconductor device with a surface thereof in a horizontal plane; and stereolithographically fabricating a substantially hermetic package on the surface of the at least one semiconductor device, the substantially hermetic package comprising at least one layer of at least partially consolidated hermetic packaging material. 2. The method of claim 1, further comprising:recognizing a location and orientation of the surface of the at least one semiconductor device. 3. The method of claim 2, further comprising storing data including at least one physical parameter of the at least one semiconductor device and of the substantially hermetic package in computer memory, and using the stored data in conjunction with a machine vision system to facilitate recognizing the location and orientation.4. The method of claim 3, further comprising using the stored data, in conjunction with the machine vision system, to effect stereolithographically fabricating the substantially hermetic package.5. The method of claim 1, further including securing the at least one semiconductor device to a carrier prior to placing the at least one semiconductor device with the surface in the horizontal plane.6. The method of claim 1, further comprising:flipping the at least one semiconductor device; and stereolithographically fabricating at least one additional layer of the substantially hermetic package on another surface of the at least one semiconductor device. 7. The method of claim 6, wherein stereolithographically fabricating the at least one additional layer comprises securing the at least one additional layer to a previously formed layer of the substantially hermetic package.8. The method of claim 7, wherein securing the at least one additional layer to the previously formed layer of the substantially hermetic package comprises substantially encapsulating the at least one semiconductor device.9. The method of claim 1, wherein stereolithographically fabricating comprises:forming a layer of unconsolidated hermetic packaging material; at least partially selectively consolidating the hermetic packaging material of the layer in selected regions; and repeating forming the layer and at least partially selectively consolidating until all surfaces of the at least one semiconductor device are substantially covered with at least partially consolidated hermetic packaging material. 10. The method of claim 1, wherein stereolithographically fabricating comprises:providing a sheet of hermetic packaging material; and defining at least boundaries of a corresponding, first layer of the substantially hermetic package in the sheet. 11. The method of claim 10, wherein stereolithographically fabricating further comprises:providing at least one additional sheet of hermetic packaging material; and defining at least boundaries of an additional, corresponding layer of the substantially hermetic package in the at least one additional sheet. 12. The method of claim 10, wherein defining comprises laser-cutting.13. The method of claim 10, wherein providing the sheet comprises providing a sheet of thermoplastic glass.14. The method of claim 1, wherein stereolithographically fabricating is effected until the at least one semiconductor device is substantially encapsulated by hermetic packaging material.15. The method of claim 1, wherein placing comprises placing an assembly including at least one semiconductor die and at least one carrier substrate in the horizontal plane.16. The method of claim 1, wherein placing comprises placing an assembly including at least one semiconductor die and at least one lead frame in the horizontal plane.17. The method of claim 1, wherein placing comprises placing at least one substantially bare semiconductor die in the horizontal plane.18. The method of claim 17, wherein placing the at least one substantially bare semiconductor die comprises placing a semiconductor substrate bearing a plurality of substantially bare semiconductor die locations in saidthe horizontal plane.19. The method of claim 18, wherein said stereolithographically fabricating is effected on a first side of the semiconductor substrate, the hermetic packaging material substantially covering the first side of the semiconductor substrate.20. The method of claim 19, further comprising inverting the semiconductor substrate and removing material of the semiconductor substrate between adjacent semiconductor die locations at least down to the hermetic packaging material, the hermetic packaging material maintaining positions of adjacent semiconductor dice.21. The method of claim 20, wherein removing comprises sawing the semiconductor substrate along streets located between the adjacent semiconductor die locations.22. The method of claim 20, wherein removing comprises etching the semiconductor substrate along streets located between the adjacent semiconductor die locations.23. The method of claim 20, further comprising:disposing at least partially consolidated hermetic packaging material between the adjacent semiconductor dice and on an active surface of each of the adjacent semiconductor dice to form a plurality of substantially hermetically packaged semiconductor dice. 24. The method of claim 23, further comprising:singulating at least some of the plurality of substantially hermetically packaged semiconductor dice from the semiconductor substrate. 25. The method of claim 23, further comprising:exposing at least one bond pad on an active surface of at least one of the plurality of substantially hermetically packaged semiconductor dice. 26. The method of claim 25, wherein exposing comprises etching a region of an at least partially consolidated hermetic packaging material located above the at least one bond pad.27. The method of claim 25, further comprising:fabricating at least one conductive trace on the substantially hermetic package and in communication with the at least one bond pad.
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