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The invention relates to a structure of and a process of forming an integrated circuit package that utilizes a thermal interface material layer having an aligned array of carbon nanotubes affixed to a surface of the layer. The thermal interface material is diamond deposited by chemical vapor deposit

The invention relates to a structure of and a process of forming an integrated circuit package that utilizes a thermal interface material layer having an aligned array of carbon nanotubes affixed to a surface of the layer. The thermal interface material is diamond deposited by chemical vapor deposition. The carbon nanotubes are formed by a plasma discharge process on the surface of the CVDD and also may be formed on the surface of the die.

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1. Apparatus for cooling a circuit die, comprising:a thermal management aid having a CVDD surface; and an array of substantially aligned carbon nanotubes coupling a surface of the circuit die to the CVDD surface of the thermal management aid, the array of nanotubes affixed to one of either the surfa

1. Apparatus for cooling a circuit die, comprising:a thermal management aid having a CVDD surface; and an array of substantially aligned carbon nanotubes coupling a surface of the circuit die to the CVDD surface of the thermal management aid, the array of nanotubes affixed to one of either the surface of the die or the CVDD surface of the thermal management aid. 2. The apparatus of claim 1 wherein the carbon nanotubes of the array of carbon nanotubes are primarily affixed to the CVDD layer of the thermal management aid.3. The apparatus of claim 1 wherein the carbon nanotubes of the array of carbon nanotubes are primarily affixed to the surface of the circuit die.4. The apparatus of claim 1 wherein the carbon nanotubes of the array of carbon nanotubes are affixed to both the surface of the circuit die and the CVDD surface of the thermal management aid.5. The apparatus of claim 1 wherein the thermal management aid is an integrated heat spreader.6. The apparatus of claim 1 wherein the thermal management aid is a heat sink.7. The apparatus of claim 1 wherein the array of substantially aligned carbon nanotubes also comprises thermal interface material.8. The apparatus of claim 7 wherein the thermal interface material comprises a thermally conductive grease.9. Apparatus for cooling a circuit die, comprising:a thermal management aid having a CVDD surface; and an array of substantially aligned carbon nanotubes coupling a surface of the circuit die to the CVDD surface of the thermal management aid, the array of nanotubes affixed to the surface of the die. 10. The apparatus of claim 9 wherein the array is also affixed to the CVDD surface.11. The apparatus of claim 9 wherein the array also comprises thermally conductive grease.12. Apparatus for cooling a circuit die, comprising:a thermal management aid having a CVDD surface; and an array of substantially aligned carbon nanotubes coupling a surface of the circuit die to the CVDD surface of the thermal management aid, the array of nanotubes affixed to the CVDD surface of the thermal management aid. 13. The apparatus of claim 12 wherein the apparatus also comprises a thermally conductive grease.14. The apparatus of claim 12 wherein the array is also affixed to the die.15. An integrated circuit package, comprising:a substrate; a circuit die mounted on the substrate a heat sink; a heat spreader thermally coupled to the heat sink and having a having a CVDD surface; and an array of substantially aligned carbon nanotubes coupling a surface of the circuit die to the CVDD surface of the heat spreader, the array of nanotubes affixed to one of either the surface of the circuit die or the CVDD surface of the thermal spreader. 16. The integrated circuit package of claim 15 wherein the array affixed to both the surface of the circuit die and the CVDD surface of the heat spreader.17. The integrated circuit package of claim 15 wherein the array also comprises thermal grease.18. A process for enhancing heat transfer from a circuit die to a thermal management aid, comprising:forming a CVDD layer on a thermal management aid; growing an array of nanotubes on one of a surface of the circuit die or the CVDD layer; and mounting the thermal management aid to the circuit die with the layer of aligned nanotubes thermally coupling the surface of the circuit die to the CVDD layer of the thermal management aid. 19. The process according to claim 18, wherein the growing of a layer of nanotubes comprises forming the nanotubes on a surface of the die by a plasma-discharge process.20. The process according to claim 18, wherein the growing of a layer of nanotubes comprises forming the nanotubes on the CVDD layer by a plasma-discharge process.21. A process for thermally coupling a circuit die to a thermal management aid comprising:forming a CVDD layer on a thermal management aid; growing a layer of nanotubes on the CVDD layer; and mounting the thermal management aid to the die with the layer of nanotubes thermally coupling the surface of the die to the CVDD layer of the thermal management aid. 22. The process according to claim 21, wherein the growing operation also comprises adding thermal interface material to the layer of nanotubes.23. The process according to claim 21, also comprising growing a layer of nanotubes on the surface of the die and the mounting of the thermal management layer to the die also comprises intermeshing the layers of nanotubes.