IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0109001
(2002-03-29)
|
우선권정보 |
JP-0077055 (2002-03-19); JP-0097128 (2001-03-29) |
발명자
/ 주소 |
- Irino, Kiyoshi
- Morisaki, Yusuke
- Sugita, Yoshihiro
- Tanida, Yoshiaki
- Iba, Yoshihisa
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출원인 / 주소 |
|
대리인 / 주소 |
Westerman, Hattori, Daniels &
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인용정보 |
피인용 횟수 :
20 인용 특허 :
3 |
초록
▼
An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer t
An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.
대표청구항
▼
1. A semiconductor device comprising:a channel area formed in a Si crystal layer, a gate insulation film formed on the channel area, containing a SiO layer that is formed on the Si crystal layer, a first SiN layer formed on the SiO layer, a dielectric metal oxide layer formed on the first SiN layer,
1. A semiconductor device comprising:a channel area formed in a Si crystal layer, a gate insulation film formed on the channel area, containing a SiO layer that is formed on the Si crystal layer, a first SiN layer formed on the SiO layer, a dielectric metal oxide layer formed on the first SiN layer, and a second SiN layer formed on the dielectric metal oxide layer, and a gate electrode formed on the gate insulation film. 2. The semiconductor device as claimed in claim 1, wherein the SiO layer includes an oxygen atomic layer that uniformly covers surface of the Si substrate.3. The semiconductor device as claimed in claim 2, wherein the oxygen atomic layer is a single atomic layer of oxygen.4. The semiconductor device as claimed in claim 1, wherein the first SiN layer includes a nitrogen atomic layer that uniformly covers surface of the SiO layer.5. The semiconductor device as claimed in claim 2, wherein the nitrogen atomic layer of the first SiN layer is a single atomic layer of nitrogen.6. The semiconductor device as claimed in claim 2, wherein 90% or more of oxygen atoms of the oxygen atomic layer of the SiO layer are bonded with Si atoms on the surface of the Si crystal layer.7. The semiconductor device as claimed in claim 4, wherein 90% or more of nitrogen atoms in the nitrogen atomic layer of the first SiN layer are bonded with Si atoms of the SiO layer.8. The semiconductor device as claimed in claim 1, wherein each of the SiO layer, the first SiN layer, and the second SiN layer is about 1 molecule layer thick.9. The semiconductor device as claimed in claim 1, wherein surface of the dielectric metal oxide layer is uniformly covered by an oxygen atomic layer that consists of oxygen atoms.10. The semiconductor device as claimed in claim 1, wherein the second SiN layer includes a nitrogen atomic layer that uniformly covers the dielectric metal oxide layer.11. The semiconductor device as claimed in claim 10, wherein the nitrogen atomic layer of the second SiN layer is a single atomic layer of nitrogen.12. The semiconductor device as claimed in claim 9, wherein nitrogen atoms in the nitrogen atomic layer of the second SiN layer are primarily bonded with oxygen atoms in the oxygen atomic layer that covers the dielectric metal oxide layer surface.13. The semiconductor device as claimed in claim 1, wherein the dielectric metal oxide layer is a lamination of an oxygen atomic layer of oxygen atoms and a metal atomic layer of metal atoms, laminated alternately, each layer being in single atom thickness.14. The semiconductor device as claimed in claim 1, wherein the dielectric metal oxide layer is one of an oxide and a silicate of metallic elements chosen from at least one of Zr, Hf, Sr, Ba Ta, Ti, Y Lr, and lanthanoid.15. The semiconductor device as claimed in claim 1, wherein the gate electrode consists of poly silicon.16. A semiconductor device, comprising:a Si substrate, a gate insulation film formed on the Si substrate, and a gate electrode formed on the gate insulation film; wherein the gate insulation film, comprising: a first insulation film that comprises an oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a Si atom of surface of the Si substrate, a first Si atomic layer consisting of Si atoms, each of which is bonded with an oxygen atom in the oxygen atomic layer, a nitrogen atomic layer consisting of nitrogen atoms, each of which is bonded with a Si atom in the Si atomic layer, and a second Si atomic layer, consisting of Si atoms, each of which is bonded with a nitrogen atom in the nitrogen atomic layer, a second insulation film that comprises an oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a Si atom in the second Si atomic layer, a metal atomic layer consisting of metal atoms, each of which is bonded with an oxygen atom in the oxygen atomic layer, an oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a metal atom in the metal atomic layer, and, at the topmost part, a topmost oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a metal atom in the metal atomic layer, and a third insulation film that comprises a Si atomic layer that covers the topmost oxygen atomic layer, consisting of Si atoms, each of which is bonded with an oxygen atom in the topmost oxygen atomic layer, and a nitrogen atomic layer, consisting of nitrogen atoms, each of which is bonded with a Si atom in the Si atomic layer that covers the topmost oxygen atomic layer. 17. A complementary type semiconductor device, comprising:a Si substrate having a first device area of a first conductivity type, and a second device area of a second conductivity type, which are separated by an isolation area, a first gate insulation film formed in the first device area of the Si substrate, a second gate insulation film formed in the second device area of the Si substrate, a first gate electrode formed on the first gate insulation film, and a second gate electrode formed on the second gate insulation film; wherein each of the first gate insulation film and the second gate insulation film comprises: a first insulation film, comprising an oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a Si atom of the Si substrate surface, a first Si atomic layer consisting of Si atoms, each of which is bonded with an oxygen atom in the oxygen atomic layer, a nitrogen atomic layer consisting of nitrogen atoms, each of which is bonded with a Si atom in the Si atomic layer, and a second Si atomic layer consisting of Si atoms, each of which is bonded with a nitrogen atom in the nitrogen atomic layer, a second insulation film, comprising an oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a Si atom in the Si atomic layer, a metal atomic layer consisting of metal atoms, each of which is bonded with an oxygen atom in the oxygen atomic layer, an oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a metal atom in the metal atomic layer, and, at topmost, a topmost oxygen atomic layer consisting of oxygen atoms, each of which is bonded with a metal atom in the metal atomic layer, and a third insulation film, comprising a Si atomic layer that covers the topmost oxygen atomic layer, consisting of Si atoms, each of which is bonded with an oxygen atom of the topmost oxygen atomic layer, and a nitrogen atomic layer, consisting of nitrogen atoms, each of which is bonded with a Si atom in the Si atomic layer that covers the topmost oxygen atomic layer.
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