초록 ▼

Disclosed is a wafer-holding ring adapted for holding a wafer on a chemical mechanical polishing apparatus, which can prevent damage to a wafer, possesses excellent abrasion resistance, and can reduce replacement work and consequently can realize mass production of polished wafers. In the wafer-hold

Disclosed is a wafer-holding ring adapted for holding a wafer on a chemical mechanical polishing apparatus, which can prevent damage to a wafer, possesses excellent abrasion resistance, and can reduce replacement work and consequently can realize mass production of polished wafers. In the wafer-holding ring for a chemical mechanical polishing apparatus, the surface of the wafer-holding ring at least in its portion, which can come into contact with a wafer, is formed of a resin composition comprising not less than 30% by weight of polybenzimidazole.

대표청구항 ▼

1. A wafer-holding ring for a chemical mechanical polishing apparatus, adapted for holding a wafer on the chemical mechanical polishing apparatus, wherein the surface of said wafer-holding ring at least in its portion, which can come into contact with a wafer, is formed of a resin composition compri

1. A wafer-holding ring for a chemical mechanical polishing apparatus, adapted for holding a wafer on the chemical mechanical polishing apparatus, wherein the surface of said wafer-holding ring at least in its portion, which can come into contact with a wafer, is formed of a resin composition comprising not less than 30% by weight of polybenzimidazole and not more than 70% by weight of polyarylene ketone.2. The wafer-holding ring for a chemical mechanical polishing apparatus according to claim 1, wherein the resin composition further comprises not more than 40% by weight of a filler.3. The wafer-holding ring for a chemical mechanical polishing apparatus according to claim 2, wherein the filler is a glass fiber, a carbon fiber, graphite, boron nitride, carbon black, titanium oxide, or silicon oxide.4. The wafer-holding ring for a chemical mechanical polishing apparatus according to claim 3, wherein a surface resin layer formed of the resin composition is provided on the surface of said wafer-holding ring at least in its portion which can come into contact with a wafer and has a thickness of not less than 50 μm.5. The wafer-holding ring for a chemical mechanical polishing apparatus according to claim 2, wherein a surface resin layer formed of the resin composition is provided on the surface of said wafer-holding ring at least in its portion which can come into contact with a wafer and has a thickness of not less than 50 μm.6. The wafer-holding ring for a chemical mechanical polishing apparatus according to claim 1, wherein a surface resin layer formed of the resin composition is provided on the surface of said wafer-holding ring at least in its portion which can come into contact with a wafer and has a thickness of not less than 50 μm.7. The wafer-holding ring for a chemical mechanical polishing apparatus according to claim 1, wherein the whole wafer-holding ring is formed of the resin composition.8. A wafer-holding ring for a chemical mechanical polishing apparatus, adapted for holding a wafer on the chemical mechanical polishing apparatus, wherein the surface of said wafer-holding ring at least in its portion, which can come into contact with a wafer, is formed of a resin composition comprising not less than 30% by weight of polybenzimidazole, not more than 70% by weight of polyarylene ketone and not more than 40% by weight of a filler.9. A wafer-holding ring for a chemical mechanical polishing apparatus, adapted for holding a wafer on the chemical mechanical polishing apparatus, wherein the surface of said wafer-holding ring at least in its portion, which can come into contact with a wafer, is formed of a resin composition comprising not less than 30% by weight of polybenzimidazole and not more than 70% by weight of polyarylene ketone, wherein a surface resin layer formed of the resin composition is provided on the surface of said wafer-holding ring at least in its portion which can come into contact with a wafer and has a thickness of not less than 50 μm.