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특허 상세정보

Methods of forming backside connections on a wafer stack

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/30   
미국특허분류(USC) 438/459; 438/455; 438/622; 438/652; 438/666; 438/672
출원번호 US-0665824 (2003-09-17)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 52  인용 특허 : 9
초록

Various methods of forming backside connections on a wafer stack are disclosed. To form the backside connections, vias are formed in a first wafer that is to be bonded with a second wafer. The vias used for the backside connections are formed on a side of the first wafer along with an interconnect structure, and the backside connections are formed on an opposing side of the first wafer using these vias.

대표
청구항

1. A method comprising:forming a first interconnect structure on one side of a first wafer; forming a number of vias, each of the vias extending through the first interconnect structure and into the first wafer; depositing an insulating material in each of the number of vias, the insulating material in each via forming an insulating plug; forming a second interconnect structure over the insulating plugs and the first interconnect structure, wherein each of the insulating plugs extends to one of a number of conductors in the second interconnect structure;...

이 특허를 인용한 특허 피인용횟수: 52

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