Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a cond
Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.
대표청구항▼
1. A method of processing a substrate, comprising:polishing a substrate surface to expose a first conductive material disposed in a dielectric material; exposing the substrate surface to an initiation solution comprising a boron-containing reducing agent; forming initiation sites on the exposed firs
1. A method of processing a substrate, comprising:polishing a substrate surface to expose a first conductive material disposed in a dielectric material; exposing the substrate surface to an initiation solution comprising a boron-containing reducing agent; forming initiation sites on the exposed first conductive material; and depositing a second conductive material on the initiation sites by exposing the substrate surface to an electroless solution containing a reducing agent. 2. The method of claim 1, wherein the boron-containing reducing agent comprises an alkali metal borohydride, an alkyl amine borane, or combinations thereof.3. The method of claim 1, wherein the boron-containing reducing agent comprises sodium borohydride, dimethylamine borane, or combinations thereof and the reducing agent comprises sodium hypophosphite.4. The method of claim 1, wherein the initiation solution comprises dimethylamine borane and potassium hydroxide, and has a pH between about 8 and about 13.5. The method of claim 1, wherein the initiation solution comprises between about 0.25 g/L and about 6 g/L of the boron-containing reducing agent.6. The method of claim 1, further comprising treating the substrate surface to remove oxide formation with an acidic solution or a plasma etch technique prior to exposing the substrate surface to the initiation solution.7. method of claim 1, wherein the second conductive material comprises cobalt or a cobalt alloy.8. The method of claim 1, further comprising cleaning the substrate surface of the solution comprising the boron-containing reducing agent prior to exposing the substrate surface to the electroless solution.9. The method of claim 1, wherein the first conductive material is exposed to the solution comprising a boron-containing reducing agent between about 60 seconds and about 120 seconds.10. The method of claim 1, wherein the initiation sites comprise metal borides.11. The method of claim 1, wherein the reducing agent comprises an alkali metal borohydride, an alkyl amine borane, or combinations thereof.12. The method of claim 7, wherein the reducing agent comprises sodium borohydride, dimethylamine borane, or combinations thereof, and the electroless solution deposits a cobalt-boron layer.13. The method of claim 7, wherein the reducing agent comprises sodium hypophosphite, and the electroless solution deposits a cobalt-phosphorus layer.14. The method of claim 7, wherein the electroless solution further comprises a surfactant, a complexing agent, a pH adjusting agent, or combinations thereof.15. The method of claim 7, wherein the electroless solution further comprises a tungstic acid, a tungstate salt, a stannate salt, or combinations thereof.16. The method of claim 7, wherein the electroless solution comprises 20 g/L of cobalt sulfate, about 50 g/L of sodium citrate, about 4 g/L of dimethylamine borane, with sufficient potassium hydroxide to provide a pH of between about 10 and about 12.17. A method of processing a substrate having a dielectric material and apertures formed therein, the method comprising:rinsing the substrate surface with an initiation solution comprising a boron-containing reducing agent to form an initiation layer on the dielectric material and apertures formed therein; and depositing a cobalt-containing layer on the initiation layer using an electroless solution containing a reducing agent. 18. The method of claim 17, further comprising:depositing a seed layer on the cobalt-containing layer; and depositing a conductive material layer on the seed layer. 19. The method of claim 17, further comprising depositing a conductive material layer on the cobalt-containing layer.20. The method of claim 17, wherein the boron-containing reducing agent comprises an alkali metal borohydride, an alkyl amine borane, or combinations thereof.21. The method of claim 20, wherein the boron-containing reducing agent comprises sodium borohydride, dimethylamine borane, or combinations thereof, and the reducing agent comprises sodium hypophosphite.22. The method of claim 17, wherein the initiation solution comprises dimethylamine borane and potassium hydroxide, and has a pH between about 8 and about 13.23. The method of claim 20, wherein the initiation solution comprises between about 0.25 g/L and about 6 g/L of the boron-containing reducing agent.24. The method of claim 17, further comprising treating the substrate surface to remove oxide formation with an acidic solution or a plasma etch technique prior to exposing the substrate surface to the initiation solution.25. The method of claim 17, wherein the cobalt-containing layer comprises cobalt or a cobalt alloy.26. The method of claim 17, further comprising cleaning the substrate surface prior to exposing the substrate surface to the electroless solution.27. The method of claim 17, wherein the reducing agent comprises an alkali metal borohydride, an alkyl amine borane, or combinations thereof.28. The method of claim 17, wherein the electroless solution deposits a cobalt-boron layer using a reducing agent comprising sodium borohydride, dimethylamine borane, or combinations thereof, the electroless solution deposits a cobalt-phosphorus layer, using a reducing agent comprising sodium hypophosphite, or the electroless solution deposits a cobalt-boron-phosphorus layer using a combination of a boron containing reducing agent comprising sodium borohydride, dimethylamine borane, or combinations thereof, and a boron containing reducing agent comprising hypophosphite.29. The method of claim 17, further comprising depositing a conductive material layer on the cobalt-containing layer.30. The method of claim 17, wherein the electroless solution further comprises a tungstic acid, a tungstate salt, a stannate salt, or combinations thereof.31. The method of claim 17, wherein the first conductive material is copper and the initiation layer comprises copper boride.32. A method of processing a substrate having a conductive silicon-based material disposed thereon with patterned apertures formed therein, the method comprising:depositing an initiation layer on the conductive silicon-based material; depositing a first metal layer on the initiation layer by an electroless solution comprising a boron-containing reducing agent; cleaning the substrate surface of the electroless solution; and forming a metal silicide layer by reacting the conductive silicon-based material and at least a portion of the first metal layer using one or more annealing processes. 33. The method of claim 32, wherein the first metal layer comprises cobalt or a cobalt alloy.34. The method of claim 32, further comprising depositing a second metal layer on the metal silicide layer.35. method of claim 32, wherein the boron-containing reducing agent comprises an alkali metal borohydride, an alkyl amine borane, or combinations thereof.36. The method of claim 33, wherein the boron-containing reducing agent comprises sodium borohydride, dimethylamine borane, trimethylamineborane, or combinations thereof, and the electroless solution deposits a cobalt-boron layer.37. The method of claim 32, wherein the initiation layer comprises a metal boride layer deposited from a solution containing a boron-containing reducing agent or a metal layer deposited from an electroless solution comprising a boron-containing reducing agent.38. The method of claim 32, wherein the electroless solution further comprises a tungstic acid, a tungstate salt, a stannate salt, or combinations thereof.39. The method of claim 33, wherein the electroless solution further comprises a non-boron-containing reducing agent comprises sodium hypophosphite and the electroless deposits a cobalt-boron-phosphorus layer.40. The method of claim 32, further comprising etching any portion of an unreacted first metal after the one or more annealing steps.41. The method of claim 32, further comprising cleaning the substrate surface prior to exposing the substrate surface to the electroless solution.42. The method of claim 1, wherein the electroless solution comprises between about 0.5 g/L and about 30 g/l of a metal salt, between about 1 g/L and about 30 g/l of reducing agent, and between about 0.01 g/l and about 50 g/L of additives, and sufficient pH adjusting agent to provide a pH of between about 8 and about 13.43. The method of claim 17, wherein the electroless solution comprises between about 0.5 g/L and about 30 g/l of a metal salt, between about 1g/L arid about 30 g/l of reducing agent, and between about 0.01 g/l and about 50 g/L of additives, and sufficient pH adjusting agent to provide a pH of between about 8 and about 13.44. The method of claim 32, wherein the electroless solution comprises between about 0.5 g/L and about 30 g/l of a metal salt, between about 1 g/L and about 30 g/l of reducing agent, end between about 0.01 g/l and about 50 g/L of additives, and sufficient pH adjusting agent to provide a pH of between about 8 and about 13.45. The method of claim 18, wherein the seed layer comprises copper or tungsten and the conductive material comprises copper or tungsten.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (84)
Shacham Yosef Y. (Ithaca NY) Bielski Roman (Ithaca NY), Alkaline free electroless deposition.
Chen Ling ; Ganguli Seshadri ; Zheng Bo ; Wilson Samuel ; Marcadal Christophe, CVD method of depositing copper films by using improved organocopper precursor blend.
Brummett Charles Roscoe (Harrisburg PA) Shaak Ray Ned (Lebanon PA) Andrews Daniel Marshall (Harrisburg PA), Catalyst for electroless deposition of metals.
Brummett Charles Roscoe (Harrisburg PA) Shaak Ray Ned (Lebanon PA) Andrews Daniel Marshall (Harrisburg PA), Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates.
Sambucetti, Carlos Juan; Chen, Xiaomeng; Seo, Soon-Cheon; Agarwala, Birenda Nath; Hu, Chao-Kun; Lustig, Naftali Eliahu; Greco, Stephen Edward, Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect.
Brusic Vlasta A. ; Marino Jeffrey Robert ; O'Sullivan Eugene John ; Sambucetti Carlos Juan ; Schrott Alejandro Gabriel ; Uzoh Cyprian Emeka, Cobalt-tin alloys and their applications for devices, chip interconnections and packaging.
Edelstein Daniel C. ; Dalton Timothy J. ; Gaudiello John G. ; Krishnan Mahadevaiyer ; Malhotra Sandra G. ; McGlashan-Powell Maurice ; O'Sullivan Eugene J. ; Sambucetti Carlos J., Dual etch stop/diffusion barrier for damascene interconnects.
Yezdi Dordi ; Joe Stevens ; Roy Edwards ; Bob Lowrance ; Michael Sugarman ; Mark Denome, Electro-chemical deposition cell for face-up processing of single semiconductor substrates.
Dordi Yezdi ; Olgado Donald J. ; Morad Ratson ; Hey Peter ; Denome Mark ; Sugarman Michael ; Lloyd Mark ; Stevens Joseph ; Marohl Dan ; Shin Ho Seon ; Ravinovich Eugene ; Cheung Robin ; Sinha Ashok K, Electro-chemical deposition system.
Dubin Valery M. ; Shacham-Diamand Yosef ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K., Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications.
Shacham-Diamand Yosi ; Dubin Valery M. ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K., Electroless deposition equipment or apparatus and method of performing electroless deposition.
Cheung Robin ; Carl Daniel A. ; Dordi Yezdi ; Hey Peter ; Morad Ratson ; Chen Liang-Yuh ; Smith Paul F. ; Sinha Ashok K., In-situ electroless copper seed layer enhancement in an electroplating system.
Lopatin, Sergey; Wang, Fei; Schonauer, Diana; Avanzino, Steven C., Interconnect structure formed in porous dielectric material with minimized degradation and electromigration.
Goldstein Rachel (Givataim CT ILX) Kukanskis Peter E. (Watertown CT) Grunwald John J. (New Haven CT), Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence.
Daniel A. Carl ; Barry Chin ; Liang Chen ; Robin Cheung ; Peijun Ding ; Yezdi Dordi ; Imran Hashim ; Peter Hey ; Ashok K. Sinha, Method for achieving copper fill of high aspect ratio interconnect features.
Chen, Linlin; Wilson, Gregory J.; McHugh, Paul R.; Weaver, Robert A.; Ritzdorf, Thomas L., Method for electrochemically depositing metal on a semiconductor workpiece.
Sambucetti Carlos Juan ; Rubino Judith Marie ; Edelstein Daniel Charles ; Cabral ; Jr. Cyryl ; Walker George Frederick ; Gaudiello John G ; Wildman Horatio Seymour, Method for forming Co-W-P-Au films.
Lopatin Sergey ; Achuthan Krishnashree, Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed.
Kloiber Allan J. (Marshall Township ; Allegheny County PA) Bubien Gary G. (Center PA) Osmanski Gerald S. (Brighton Township ; Beaver County PA), Modular apparatus and method for surface treatment of parts with liquid baths.
Kaja Suryanarayana (Hopewell Junction NY) Mukherjee Shyama P. (Hopewell Junction NY) O\Sullivan Eugene J. (Upper Nyack NY) Paunovic Milan (Port Washington NY), Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electrol.
Schacham-Diamand Yosef ; Dubin Valery M. ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K. ; Desilva Melvin, Protected encapsulation of catalytic layer for electroless copper interconnect.
Chao-Kun Hu ; Robert Rosenberg ; Judith Marie Rubino ; Carlos Juan Sambucetti ; Anthony Kendall Stamper, Reduced electromigration and stressed induced migration of Cu wires by surface coating.
Calabrese Gary S. (North Andover MA) Calvert Jeffrey M. (Burke VA) Chen Mu-San (Ellicott MD) Dressick Walter J. (Fort Washington MD) Dulcey Charles S. (Washington DC) Georger ; Jr. Jacque H. (Holden , Selective metallization process.
Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
Chen, Qingyun; Valverde, Charles; Paneccasio, Vincent; Petrov, Nicolai; Stritch, Daniel; Witt, Christian; Hurtubise, Richard, Defectivity and process control of electroless deposition in microelectronics applications.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.