초록 ▼

An integrated circuit (10) includes a thermal sensing device (20) and a power-switching device (12) such as an IGBT. The power device (12) is fabricated in a conventional manner on a semiconductor substrate, and the thermal sensing device (20) is fabricated on an electrical insulation layer (74) for

An integrated circuit (10) includes a thermal sensing device (20) and a power-switching device (12) such as an IGBT. The power device (12) is fabricated in a conventional manner on a semiconductor substrate, and the thermal sensing device (20) is fabricated on an electrical insulation layer (74) formed over the substrate. The thermal sensing device (20) may be provided in the form of a number of series-connected polysilicon diodes (D1-D3) positioned adjacent to the power device (12) such that the operating temperature of the thermal sensing device (20) is near that of the power device (12). In response to an input current IC, the thermal sensing device (20) produces an output voltage (VD) that is substantially linear with surface die temperature, and which reacts rapidly to changes in surface die temperature. The thermal sensing device (20) is completely electrically isolated from the power device, thereby eliminating any electrical interaction therebetween.

대표청구항 ▼

1. A semiconductor integrated circuit comprising:a power device fabricated on a semiconductor substrate, said power device having a first plurality of electrical terminals extending therefrom and unconnected to any other electrical device defined by the integrated circuit, each of said first plurali

1. A semiconductor integrated circuit comprising:a power device fabricated on a semiconductor substrate, said power device having a first plurality of electrical terminals extending therefrom and unconnected to any other electrical device defined by the integrated circuit, each of said first plurality of electrical terminals forming a separate electrical contact on the integrated circuit; an electrical insulation layer formed over said semiconductor substrate; and a thermal sensing device fabricated on said electrical insulation layer, said thermal sensing device having a second plurality of electrical terminals, separate from said first plurality of electrical terminals, extending therefrom and unconnected to any other electrical device defined by the integrated circuit, each of said second plurality of electrical terminals forming a separate electrical contact on the integrated circuit. 2. The semiconductor integrated circuit of claim 1 wherein said thermal sensing device includes a diode structure responsive to an input current provided to one of said second plurality of electrical terminals to produce a signal at another one of said second plurality of electrical terminals based on a voltage across said thermal sensing device, said signal having a substantially linear relationship to an operating temperature of said power device.3. The semiconductor integrated circuit of claim 2 wherein said diode structure comprises a number of series-connected diodes each formed of polysilicon.4. The semiconductor integrated circuit of claim 3 wherein each of said number of series-connected polysilicon diodes includes a p-type polysilicon region forming a pn junction with an n-type polysilicon region.5. The semiconductor integrated circuit of claim 3 wherein said number of series-connected diodes are arranged along a common axis to form an elongated diode row structure having a bottom surface in contact with said electrical insulation layer and four surrounding sides including a pair of elongated sides and a pair of short sides.6. The semiconductor integrated circuit of claim 5 wherein said diode row structure is arranged relative to said power device such that at least one of said pair of long sides is positioned adjacent to a heat-generating portion of said power device.7. The semiconductor integrated circuit of claim 6 wherein said diode row structure is arranged relative to said power device such that both of said pair of long sides are positioned adjacent to a heat-generating portion of said power device.8. The semiconductor integrated circuit of claim 1 wherein said power device is an insulated gate bipolar transistor.9. The semiconductor integrated circuit of claim 1 further including a transient-blocking semiconductor layer fabricated on said semiconductor substrate and positioned directly beneath said thermal sensing device, said transient-blocking semiconductor layer shielding said thermal sensing device from voltage transients occurring in said substrate.