초록 ▼

There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystalliz

There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.

대표청구항 ▼

1. An electronic device having an active matrix display device comprising:a thin film transistor having an active layer comprising a crystalline semiconductor film over a substrate having an insulating surface, said active layer comprising at least a channel forming region, a source region, and a dr

1. An electronic device having an active matrix display device comprising:a thin film transistor having an active layer comprising a crystalline semiconductor film over a substrate having an insulating surface, said active layer comprising at least a channel forming region, a source region, and a drain region, a first wiring electrically connected to the thin film transistor; a leveling film over said thin film transistor the leveling film having an opening to reach the first wiring; a pixel electrode connected to the first wiring through the opening; an alignment film on the pixel electrode; columnar spacers over a contact portion where the pixel electrode is connected to the first wiring through the opening; wherein said active layer comprises a plurality of crystals each extending in a source-drain direction and a boundary portion of said plurality of crystals, said boundary portion located in one of the source region and the drain region and extending in a channel width direction. 2. A device according to claim 1, wherein said active layer further comprises at least one LDD region located between the channel forming region and the source and drain regions.3. A device according to claim 1, wherein the boundary portion has a linear shape.4. A device according to claim 1, wherein the electronic device is at least one of a video camera, a digital camera, a projector, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.5. A device according to claim 1, wherein said display device comprises a liquid crystal display.6. A device according to claim 1, wherein said display device comprises an EL display device.7. An electronic device having an active matrix display device comprising:a thin film transistor having an active layer comprising a crystalline semiconductor film over a substrate having an insulating surface, said active layer comprising a plurality of channel forming regions, source and drain regions, and at least one impurity region located between said channel forming regions, a first wiring electrically connected to the shin film transistor; a leveling film over said thin film transistor, the leveling film having an opening to reach the first wiring; a pixel electrode connected to the first wiring through the opening; an alignment film on the pixel electrode; columnar spacers over a contact portion where the pixel electrode is connected to the first wiring through the opening; wherein said active layer comprises a plurality of crystals each extending in a source-drain direction and a boundary portion of said plurality of crystals, said boundary portion located in said impurity region and extending in a channel width direction. 8. A device according to claim 7, wherein said active layer further comprises at least one LDD region located between the impurity region and the channel forming regions.9. A device according to claim 7, wherein the boundary portion has a linear shape.10. A device according to claim 7, wherein the electronic device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.11. A device according to claim 7, wherein said display device comprises an EL display device.12. An electronic device having a CMOS circuit comprising an n-channel TFT and a p-channel TFT, each of said TFTs comprising:a thin film transistor having an active layer comprising a crystalline semiconductor film over a substrate having an insulating surface, said active layer comprising at least a channel forming region, a source region, and a drain region, a first wiring electrically connected to the thin film transistor; a leveling film over said thin film transistor, the leveling film having an opening to reach the first wiring; a pixel electrode connected to the first wiring through the opening; an alignment film on the pixel electrode; columnar spacers over a contact portion where the pixel electrode is connected to the first wiring through the opening; wherein said active layer comprises a plurality of crystals each extending in a source-drain direction, and wherein one of the source region and the drain region of said n-channel TFT includes a boundary portion of the plurality of crystals, said boundary portion extending in a channel width direction of said active layer. 13. A device according to claim 12, wherein said active layer of the n-channel TFT further comprises at least one LDD region located between the channel forming region and the source and drain regions.14. A device according to claim 12, wherein the boundary portion has a linear shape.15. A device according to claim 12, wherein the electronic device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.16. A device according to claim 12, wherein said electronic device comprises an EL display device.17. A semiconductor device having a CMOS circuit comprising an n-channel TFT and a p-channel TFT, each of said TFTs comprising:a thin film transistor having an active layer comprising a crystalline semiconductor film over a substrate having an insulating surface, said active layer comprising at least a channel forming region, a source region, and a drain region, a first wiring electrically connected to the thin film transistor; a leveling film over said thin film transistor the leveling film having an opening to reach the first wiring; a pixel electrode connected to the first wiring through the opening; an alignment film on the pixel electrode; columnar spacers over a contact portion where the pixel electrode is connected to the first wiring through the opening; wherein said active layer comprises a plurality of crystals each extending in a source-drain direction and said active layer is free from regions where elements for promoting crystallization are added, and wherein one of the source region and the drain region of said p-channel TFT includes a boundary portion of the plurality of crystals, said boundary portion extending in a channel width direction of said active layer. 18. A device according to claim 17, wherein said active layer of the n-channel TFT further comprises at least one LDD region located between the channel forming region and the source and drain regions.19. A device according to claim 17, wherein the boundary portion has a linear shape.20. A device according to claim 17, wherein the electronic device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.21. A device according to claim 17, wherein said semiconductor device comprises an EL display device.22. An electronic device having an active matrix display device comprising:a thin film transistor having an active layer comprising a crystalline semiconductor film over a substrate having an insulating surface, said active layer comprising at least a channel forming region, a source region, and a drain region, a first wiring electrically connected to the thin film transistor; a leveling film over said thin film transistor, the leveling film having an opening to reach the first wiring; a pixel electrode connected to the first wiring through the opening; an alignment film on the pixel electrode; columnar spacers over a contact portion where the pixel electrode is connected to the first wiring through the opening; wherein said active layer comprises a plurality of crystals each extending in a carrier flow direction of said channel forming region and a boundary portion of said plurality of crystals, said boundary portion located in one of the source region and the drain region and extending in a channel width direction. 23. A device according to claim 22, wherein said active layer further comprises at least one LDD region located between the channel forming region and the source and drain regions.24. A device according to claim 22, wherein the boundary portion has a linear shape.25. A device according to claim 22, wherein the electronic device is at least one of a video camera, a digital camera, projector, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.26. A device according to claim 22, wherein said display device comprises an EL display device.