초록 ▼

We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30

We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

대표청구항 ▼

1. A method of producing a TaN seed layer which is capable of inducing the formation of alpha tantalum when tantalum is deposited over said TaN seed layer, comprising:controlling an energy level of high energy species bombarding a tantalum nitride film surface; and controlling an amount of tantalum

1. A method of producing a TaN seed layer which is capable of inducing the formation of alpha tantalum when tantalum is deposited over said TaN seed layer, comprising:controlling an energy level of high energy species bombarding a tantalum nitride film surface; and controlling an amount of tantalum sputter deposited over said tantalum nitride surface during said bombardment of said tantalum nitride film surface by said high energy species, so that a seed layer of TaN is formed which contains between about 5 atomic % and about 33 atomic % nitrogen. 2. A method in accordance with claim 1, wherein said TaN seed layer has a thickness ranging from 2 to about 10 microlayers.3. A method in accordance with claim 2, wherein said TaN seed layer has a thickness ranging from about 20 Å and about 100 Å.4. A method in accordance with claim 1, wherein said energy level of said high energy species during bombardment of said tantalum nitride film surface is controlled by:controlling a power applied to a tantalum target from which said tantalum is sputter deposited; controlling a power applied to an RF power source present internally within a process chamber in which said TaN seed layer is produced, for purposes of inputting energy into plasma species present within said process chamber; and controlling a power applied to bias a substrate upon which said tantalum nitride film resides. 5. A method in accordance with claim 4, wherein a plasma density during bombardment of said tantalum nitride film ranges between about 4×109 e?/cm3 and about 1×1012e?/cm3.6. A method of producing a TaN seed layer which is capable of inducing the formation of alpha tantalum when tantalum is deposited over said TaN seed layer, comprising:controlling an energy level of high energy species bombarding a tantalum film surface; and controlling the composition of a plasma present above said tantalum film surface, by controlling the composition of a feed gas used to generate said plasma to contain between about 10 volumetric % and about 75 volumetric % of nitrogen, so that a seed layer of TaN is formed which contains between about 5 atomic % and about 33 atomic % nitrogen. 7. A method in accordance with claim 6, wherein said TaN seed layer has a thickness ranging from 2 to about 10 microlayers.8. A method in accordance with claim 7, wherein said TaN seed layer has a thickness ranging from about 20 Å and about 100 Å.9. A method in accordance with claim 6, wherein said energy level of said high energy species during bombardment of said tantalum nitride film surface is controlled by:controlling a power applied to an RF power source present internally within said plasma processing chamber, for purposes of inputting energy into plasma species present within said process chamber; and controlling a power applied to bias a substrate upon which said tantalum nitride film resides. 10. A method in accordance with claim 9, wherein an additional power source, which applies power for purposes of plasma generation within said plasma processing chamber is also controlled.11. A method in accordance with claim 9 or claim 10, wherein a plasma density during bombardment of said tantalum film ranges between about 4×109 e?/cm3 and about 1×1012e?/cm3.12. A method of controlling an amount of nitrogen present in a TaN seed layer which is capable of inducing the formation of alpha tantalum when tantalum is deposited over said TaN seed layer, comprising:controlling an energy level of high energy species bombarding a tantalum nitride film surface; and controlling an amount of tantalum sputter deposited over said tantalum nitride surface during said bombardment of said tantalum nitride film surface by said high energy species, so that a seed layer of TaN is formed which contains between about 5 atomic % and about 33 atomic % nitrogen. 13. A method in accordance with claim 12, wherein said TaN seed layer has a thickness ranging from 2 to about 10 microlayers.14. A method in accordance with claim 13, wherein said TaN seed layer has a thickness ranging from about 20 Å and about 100 Å.15. A method in accordance with claim 12, wherein a plasma density during bombardment of said tantalum nitride film ranges between about 4×109 e?/cm3 and about 1×1012e?/cm3.16. A method of controlling an amount of nitrogen present in a TaN seed layer which is capable of inducing the formation of alpha tantalum when tantalum is deposited over said TaN seed layer, comprising:controlling an energy level of high energy species bombarding a tantalum film surface; and controlling the composition of a plasma present above said tantalum film surface, by controlling the composition of a feed gas used to generate said plasma to contain between about 10 volumetric % and about 75 volumetric % of nitrogen, so that a seed layer of TaN is formed which contains between about 5 atomic % and about 33 atomic % nitrogen. 17. A method in accordance with claim 16, wherein said TaN seed layer has a thickness ranging from 2 to about 10 microlayers.18. A method in accordance with claim 17, wherein said TaN seed layer has a thickness ranging from about 20 Å and about 100 Å.19. A method in accordance with claim 16, wherein a plasma density during bombardment of said tantalum film ranges between about 4×109 e?/cm3 and about 1×1012 e?/cm3.20. A method in accordance with claim 1, or claim 6, or claim 12, or claim 16, wherein a plasma includes high energy species of an inert gas.21. A method in accordance with claim 20, wherein said inert gas is a noble gas.22. A method in accordance with claim 21, wherein said noble gas is argon.23. A method in accordance with claim 1, or claim 6, or claim 12, or claim 16, wherein a process chamber pressure during the formation of said TaN seed layer ranges between about 0.5 mTorr and about 10 mTorr.24. A method in accordance with claim 1, or claim 6, or claim 12, or claim 16, wherein a temperature of a film surface upon which said TaN seed layer is being formed is less than about 100° C.25. A method in accordance with claim 24, wherein said film surface temperature ranges between about 30° C. and about 65° C.26. A method in accordance with claim 1, or claim 6, or claim 12, or claim 16, wherein a substrate upon which said TaN seed layer is being formed is maintained at a voltage ranging between about ?40 V and about ?200 V.