초록 ▼

To fabricate a magnetic field sensor, a copper barrier film is formed. A magnetic metal film is formed on the barrier film. A plurality of trenches is formed with a desired thickness in the magnetic metal film. A copper film is formed in the plurality of trenches, so that multiple layers of magnetic

To fabricate a magnetic field sensor, a copper barrier film is formed. A magnetic metal film is formed on the barrier film. A plurality of trenches is formed with a desired thickness in the magnetic metal film. A copper film is formed in the plurality of trenches, so that multiple layers of magnetic metal film and copper film are formed. The RF semiconductor device equipped with the magnetic field sensor includes a magnetic field sensor made by the above method. The magnetic field sensor is attached on a semiconductor substrate. Metal wirings are formed at near the both sides of the magnetic field sensor. An insulating film is formed on top. An inductor is formed on the insulating film at predetermined locations.

대표청구항 ▼

1. A method for fabricating a magnetic field sensor having a multi-layer structure, the method comprising the steps of:forming a copper barrier film an a lower layer; forming a magnetic metal film on the copper barrier film; forming a plurality of trenches with a desired thickness in the magnetic me

1. A method for fabricating a magnetic field sensor having a multi-layer structure, the method comprising the steps of:forming a copper barrier film an a lower layer; forming a magnetic metal film on the copper barrier film; forming a plurality of trenches with a desired thickness in the magnetic metal film formed on the copper barrier film; and filling the trenches with copper to form a plurality of alternating copper and magnetic metal film layers. 2. The method according to claim 1, wherein the copper barrier film 19 made of any one selected from Ta, TaN, TiN, WN.3. The method according to claim 1, wherein the copper barrier film is deposited by a sputtering method or a CVD method.4. The method according to claim 1, wherein the copper barrier film is deposited to a thickness of 100 to 1000 Å.5. The method according to claim 1, wherein the magnetic metal film is deposited to a thickness of 100 to 10000 Å.6. The method according to claim 1, wherein the magnetic metal film includes a cobalt film.7. The method according to claim 1, wherein the magnetic metal film includes Ni, NiCo, and Fe.8. The method according to claim 6, wherein the cobalt film is deposited by employing a sputtering method.9. The method according to claim 1, wherein the number of the magnetic metal film and the copper layers is 2 to 100.10. The method according to claim 1, wherein the trenches are 1 to 1000 μm in length, 0.05 to 1 μm in width, and 0.05 to 1 μm in thickness.11. The method according to claim 1, wherein the step of filling the trenches with copper includes:forming a copper seed film on the barrier film, inclusive of the trenches; depositing a layer of copper film on the barrier film, inclusive of the trenches; and removing the excess copper outside the trenches by a CMP process. 12. A method for fabricating a magnetic field sensor having a multi-layer structure of alternating copper and magnetic metal film layers, the method comprising the steps of:forming a copper barrier film made from one of Ta, TaN, TiN, and WN on a lower layer; forming a magnetic metal film on the copper barrier film, wherein the magnetic metal film is made from one of Co, Ni, NiCo, and Fe; forming a plurality of trenches in the magnetic metal film film; and filling the trenches with copper to form the plurality of alternating copper and magnetic metal film layers.