초록 ▼

This invention is a layered thin film semiconductor device comprising a first transparent layer; a thin, second transparent layer having a conductivity less than the first transparent layer; an n-type layer; and a p-type layer comprising one or more IIB and VIA elements. This invention is also a met

This invention is a layered thin film semiconductor device comprising a first transparent layer; a thin, second transparent layer having a conductivity less than the first transparent layer; an n-type layer; and a p-type layer comprising one or more IIB and VIA elements. This invention is also a method for making such semiconductor device. The thin film semiconductor devices of this invention are useful for making photovoltaic devices.

대표청구항 ▼

1. A method for making a thin film semiconductor device suitable for use in a photovoltaic device, the method comprising (a) forming on a substrate a first transparent layer comprising a conductive material, (b) forming a second transparent layer up to about 0.075 microns in thickness comprising tin

1. A method for making a thin film semiconductor device suitable for use in a photovoltaic device, the method comprising (a) forming on a substrate a first transparent layer comprising a conductive material, (b) forming a second transparent layer up to about 0.075 microns in thickness comprising tin oxide and zinc oxide and where the mole ratio of tin oxide to zinc oxide is about 99.9:01 to about 95:5 and having a resistivity of the first transparent layer, (c) forming an n-type layer or precursor layer thereof, and (d) forming a p-type layer.2. The method of claim 1 wherein the second transparent layer is is in direct contact with the first transparent layer.3. The method of claim 2 wherein the n-type layer is in direct contact with the second transparent layer.4. The method of claim 3 wherein the p-type layer is in direct contact with the n-type layer.5. The method of claim 1 wherein the second layer is about 0.01 to about 0.05 microns in thickness.6. The method of claim 1 wherein the second transparent layer is deposited using reactive DC sputtering.7. The method of claim 1 wherein the n-type layer comprises cadmium sulfide.8. The method of claim 7 wherein the cadmium sulfide n-type layer is up to about 0.07 microns in thickness.9. The method of claim 1 wherein the second transparent layer has a resistivity that provides for the deposition of a CdTe layer in a stoichiometry of about 1:1 by electrochemical deposition.10. A method for making a thin film semiconductor device suitable for use in a photovoltaic device, the method comprising (a) forming on a substrate a first transparent layer comprising a conductive material, (b) forming a thin second transparent layer having a resistivity more than the restivity of the first transparent layer, (c) forming an n-type layer, and (d) forming a p-type layer, and wherein the thin second transparent layer is formed by reactive DC sputtering a target consisting essentially of metal in an oxidizing atmosphere.11. The method of claim 10 wherein the thin second transparent layer comprises tin oxide.12. The method of claim 10 wherein the thin second transparent layer comprises zinc oxide.13. The method of claim 10 wherein the target comprises a mixture of tin and zinc.