Electrode structure for iontophoresis device and method of producing the same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
A61N-001/30
출원번호
US-0807832
(2000-05-10)
우선권정보
JP-11/132676 (1999-05-13)
국제출원번호
PCT//JP00/02967
(2001-11-13)
§371/§102 date
20011113
(20011113)
국제공개번호
WO00//69514
(2000-11-23)
발명자
/ 주소
Kuribayashi, Mitsuru
Maeda, Hiroyuki
Koga, Nobuhiro
Higo, Naruhito
출원인 / 주소
Hisamitsu Pharmaceutical Co., Inc.
대리인 / 주소
Townsend &
인용정보
피인용 횟수 :
22인용 특허 :
0
초록▼
The invention is to provide an electrode structure of an iontophoresis device and a method of producing the same, excellent in an economical property, an operational property, stability and safety. The electrode structure for the iontophoresis device comprises a backing having a substrate film (1) h
The invention is to provide an electrode structure of an iontophoresis device and a method of producing the same, excellent in an economical property, an operational property, stability and safety. The electrode structure for the iontophoresis device comprises a backing having a substrate film (1) having a molding portion, an anode side and a cathode side electrode layers (14), (15) formed passing the outer circumferential portion from the inner bottom of the molding portion, and an insulating layer 3 formed in the outer circumferential portion of the molding portion. The molding portion of the backing has a dent portion and an anode side and a cathode side conductive layers (12), (13) are separately installed therein. A cover member (8) is installed to seal between these conductive layers (12), (13) and the insulating layer (3). An adhesive sheet (10) for attachment to the skin is provided to the rear face of the substrate film (1) and a liner (16) for the adhesive sheet is provided on the cover member (8).
대표청구항▼
1. An electrode structure for an iontophoresis device comprising:a backing having a substrate film having a molding portion, an electrode layer formed passing the outer circumferential portion from the inner bottom of the molding portion, an insulating layer formed on at least the outer circumferent
1. An electrode structure for an iontophoresis device comprising:a backing having a substrate film having a molding portion, an electrode layer formed passing the outer circumferential portion from the inner bottom of the molding portion, an insulating layer formed on at least the outer circumferential portion of the molding portion and also on the upper portion of the electrode layer, a conductive layer disposed in the molding portion, and a cover member made of water-impermeable material for covering the conductive layer and the insulating layer wherein the cover member seals the insulating layer formed on the outer circumferential portion of the molding portion in a separable manner, thereby allowing the conductive layer disposed in the molding portion to be kept in a sealed state. 2. The electrode structure for the iontophoresis device according to claim 1, wherein an adhesive sheet is installed in the rear face of the substrate film of the backing.3. The electrode structure for the iontophoresis device according to claim 1, wherein the sinking depth in the molding portion of the substrate film is in a range of 0.5 mm to 7.5 mm.4. The electrode structure for the iontophoresis device according to claim 1, wherein the molding angle in the molding portion of the substrate film is in a range of 5° to 70°.5. The electrode structure for the iontophoresis device according to claim 1, wherein the separation mechanism between the insulating layer and the cover member is interfacial separation.6. The electrode structure for the iontophoresis device according to claim 5, wherein the 180 degree-peel strength between the insulating layer and the cover member is in a range of 100 g to 1,500 g per 15 mm.7. An electrode structure for an iontophoresis device comprising:a backing having a substrate film provided with a molding portion having a dent, a flange portion formed in the outer circumferential portion of the molding portion, and a lead portion led out of the flange portion, an electrode layer formed from the inner bottom of the molding portion to the lead portion through the flange portion, and an insulating layer formed on at least the flange portion and also on the upper portion of the electrode layer; a conductive layer disposed in the molding portion; and a cover member made of water-impermeable material for sealing the insulating layer formed on the flange portion in a separable manner to allow the conductive layer disposed in the molding portion to be kept in a sealed state. 8. The electrode structure for the iontophoresis device according to claim 7, wherein the lead portion formed in the electrode layer is so composed as to be connected with the clip portion of a connection cord.9. The electrode structure for the iontophoresis device according to claim 7, wherein the lead portion formed in the electrode layer has an insertion inlet for a connector.10. A method of producing an electrode structure for an iontophoresis device comprising(a) a step of printing a conductive layer and an insulating layer on a substrate film, (b) a step of forming a molding portion in the substrate film in a manner that the insulating layer is positioned at least on an outer circumferential portion, (c) a step of disposing a conductive layer in the molding portion, (d) a step of supplying a cover member made of water-impermeable material to the substrate film and sealing between the insulating layer positioned in the outer circumferential portion and the cover member to allow the conductive layer disposed in the molding portion to be kept in a sealed state, and (e) a step of cutting the substrate film and the cover member in a predetermined shape. 11. The method of producing the electrode structure for the iontophoresis device according to claim 10, wherein at least the steps (b) to (e) are carried out in a continuous line.12. The method of producing the electrode structure for the iontophoresis device according to claim 10, wherein the method further comprises a step of supplying an adhesive sheet to the rear face of the substrate film and cutting the sheet into a predetermined shape.13. The method of producing the electrode structure for the iontophoresis device according to claim 10, wherein the step of forming the molding portion is carried out while a convexity portion of a press die being butted to at least the electrode layer on the substrate film.14. The method of producing the electrode structure for the iontophoresis device according to claim 10, wherein the step of forming the molding portion in the substrate film is carried out by cold processing at a temperature lower than the thermal deformation.15. The method of producing the electrode structure for the iontophoresis device according to claim 10, wherein the step of disposing the conductive layer to the molding portion includes a step of promoting gelling of conductive gel composing the conductive layer.16. The method of producing the electrode structure for the iontophoresis device according to claim 15, wherein the step of promoting the gelling is to promote gelling by physical cross-linking by cooling or chemical cross-linking by light or heat.
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