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A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a m

A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.

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1. A magneto-resistive device having a first magnetic layer, a second magnetic layer, and an electron conductive spacer formed between and in direct contact with both of said first and second magnetic layers, wherein said first magnetic layer contains a magnetic material whose conduction electrons b

1. A magneto-resistive device having a first magnetic layer, a second magnetic layer, and an electron conductive spacer formed between and in direct contact with both of said first and second magnetic layers, wherein said first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band and said second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band, with said first and second energy bands being attributable to orbitals of the same kind, wherein a current flows in a perpendicular direction between said first and second magnetic layers through said electron conductive spacer.2. The magneto-resistive device as defined in claim 1, wherein at least either of the first magnetic layer and the second magnetic layer contains at least one species of Fe3O4, CrO2, and LaSrMnO as the half-metal magnetic material which is a d-electron conductor.3. The magneto-resistive device as defined in claim 1, wherein at least either of the first magnetic layer and the second magnetic layer contains a Heusler alloy having the composition of (MMn)2Al2 (M=Cu, Ni, Co, or Fe) or Co2MnX (X=Al, Si, Sn, or Ge) as the half-metal magnetic material which is an s-electron conductor.4. The magneto-resistive device as defined in claim 1, wherein at least either of the first magnetic layer and the second magnetic layer contains a magnetic semiconductor CrAs as the half-metal magnetic material which is a d-electron conductor.5. The magneto-resistive device as defined in claim 1, wherein at least either of the first magnetic layer and the second magnetic layer contains, as a highly polarized material which is a d-electron conductor, Fe or an Fe-containing 3d ferromagnetic compound FeX, where X denotes at least one species of Ni, Co, C, N, and O, with the Fe content being no lower than 50%.6. The magneto-resistive device as defined in claim 1, wherein at least either of the first magnetic layer and the second magnetic layer contains, as a highly polarized material which is an s-electron conductor, Ni, Co, or NiCo-containing 3d ferromagnetic compound (NiCo)X, where X denotes at least one species of Fe, C, N, and O, with the (NiCo) content being no lower than 50%.7. The magneto-resistive device as defined in claim 1, wherein the electron conductive spacer is a noble metal layer containing at least one species of Au, Cu, Pt, Au, Pd, Ag, Rh, and Ru, which is an s-electron conductor.8. The magneto-resistive device as defined in claim 1, wherein the electron conductive spacer contains at least one species of noble metal, perovskite type oxide and rutile type oxide, which is a d-electron conductor.9. The magneto-resistive device as defined in claim 8, wherein the noble metal which is a d-electron conductor is at least one species of Pt, Pd, Ag, Rh, and Ru.10. The magneto-resistive device as defined in claim 1, wherein the first magnetic layer and the second magnetic layer contains Fe3O4 as the half-metal magnetic material and the spacer contains SrTiO as the perovskite type oxide or TiO2 as the rutile type oxide.11. The magneto-resistive device as defined in claim 1, wherein the first magnetic layer contains a magnetic material which is a d-electron conductor, the second magnetic layer contains a magnetic material which is an s-electron conductor, and the electron conductive spacer contain a non-magnetic material which is a d-electron conductor.12. The magneto-resistive device as defined in claim 1, wherein the first magnetic layer contains a magnetic material which is a d-electron conductor, the second magnetic layer contains a magnetic material which is a d-electron conductor, and the electron conductive spacer contain a non-magnetic material which is a d-electron conductor.13. The magneto-resistive device as defined in claim 1, wherein the first magnetic layer contains a magnetic material which is a d-electron conductor, the second magnetic layer contains a magnetic material which is a d-electron conductor, and the electron conductive spacer contain a non-magnetic material which is an s-electron conductor.14. The magneto-resistive device as defined in claim 1, wherein the first magnetic layer contains a magnetic material which is an s-electron conductor, the second magnetic layer contains a magnetic material which is an s-electron conductor, and the electron conductive spacer contain a non-magnetic material which is an s-electron conductor.15. The magneto-resistive device as defined in claim 1, wherein the first magnetic layer changes in the direction of magnetization when an external magnetic field is applied while current is flowing from the first magnetic layer to the second magnetic layer through the electron conductive spacer.16. The magneto-resistive device as defined in claim 1, wherein an antiferromagnetic layer is formed on that surface of the second magnetic layer which is opposite to the surface facing the electron conductive spacer, so that the magnetization of the second magnetic layer is pinned.17. The magneto-resistive device as defined in claim 1, wherein a noble metal layer or a metallic layer containing an alloy of face-centered cubic structure is formed between the second magnetic layer and an antiferromagnetic layer.18. A magneto-resistive device having a first magnetic layer, a second magnetic layer, and an electron conductive spacer formed between and in direct contact with both of said first and second magnetic layers, wherein at least either of said first magnetic layer and said second magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band and said electron conductive spacer contains a non-magnetic material whose conduction electrons belong to a second energy band, with said first and second energy bands being attributable to orbitals of the same kind, wherein a current flows in a perpendicular direction between said first and second magnetic layers through said electron conductive spacer.19. A magneto-resistive device having a first magnetic layer, a second magnetic layer, and an electron conductive spacer formed between and in direct contact with both of said first and second magnetic layers, wherein said first magnetic layer and said second magnetic layer contain a half-metallic ferromagnetic material or a highly polarized magnetic material, wherein a current flows in a perpendicular direction between said first and second magnetic layers through said electron conductive spacer.20. The magneto-resistive device as defined in claim 19, wherein the half-metallic ferromagnetic material is at least one species of oxide magnetic material, magnetic semiconductor, and Heusler alloy.