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Method of preventing diffusion of copper through a tantalum-comprising barrier layer

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
  • H01L-021/31
출원번호 US-0796602 (2004-03-08)
발명자 / 주소
  • Chiang, Tony
  • Yao, Gongda
  • Ding, Peijun
  • Chen, Fusen E.
  • Chin, Barry L.
  • Kohara, Gene Y.
  • Xu, Zheng
  • Zhang, Hong
출원인 / 주소
  • Applied Materials, Inc.
인용정보 피인용 횟수 : 54  인용 특허 : 32

초록

We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protectiv

대표청구항

1. A method of preventing diffusion from a copper conductive layer through an underlying tantalum-comprising barrier layer, comprising:(a) depositing said tantalum-comprising barrier layer in a manner such that said tantalum-comprising barrier layer is variable in thickness and continuous, wherein a

이 특허에 인용된 특허 (32)

  1. Nath Prem (Rochester MI), Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition.
  2. Chiang, Tony; Yao, Gongda; Ding, Peijun; Chen, Fusen E.; Chin, Barry L.; Kohara, Gene Y.; Xu, Zheng; Zhang, Hong, Damage-free sculptured coating deposition.
  3. Braren Bodil E. (Hartsdale NY) Brown Karen H. (Yorktown Heights NY) Perry Kathleen A. (West Hills CA) Srinivasan Rangaswamy (Yorktown Heights NY) Sugerman Alvin (Hopewell Junction NY), Deposition method for high aspect ratio features using photoablation.
  4. Lu Toh-Ming (Latham NY) Mei Shao-Ning (Wappingers Falls NY), Deposition of metals on stepped surfaces.
  5. Xu Zheng ; Kieu Hoa, Deposition process for coating or filling re-entry shaped contact holes.
  6. Ward Michael G. (1 Haven Ct. ; #S-3B Nyack NY 10960), Filling of vias and contacts employing an aluminum-germanium alloy.
  7. Nulman Jaim (Palo Alto CA), Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated.
  8. Henshaw William F. (Street MD) White John R. (Darlington MD) Niiler Andrus (Bel Air MD), Hollow cathode discharge source of metal vapor.
  9. Wong George (Singapore SGX), Integrated circuit aluminum contact structure to silicon device regions.
  10. Hu Yongjun, Low angle, low energy physical vapor deposition of alloys.
  11. Eschbach Rudolph J. B. (Amenia NY), Manufacturing system for low temperature chemical vapor deposition of high purity metals.
  12. Grabarz Henry J. (Huntington CT) Grill Alfred (White Plains NY) Holber William M. (New York NY) Logan Joseph S. (Poughkeepsie NY) Yeh James T. C. (Katonah NY), Method and apparatus for filing high aspect patterns with metal.
  13. Drewery John Stephen ; Reynolds Glyn ; Russell Derrek Andrew ; Brcka Jozef ; Vukovic Mirko ; Grapperhaus Michael James ; Cerio ; Jr. Frank Michael ; Gittleman Bruce David, Method and apparatus for ionized physical vapor deposition.
  14. Actor Geri M. (Monte Sereno CA) Higa Stephen M. (San Jose CA) Hoffman ; Jr. Vance E. (Los Altos CA) Miller Patrick O. (Mountain View CA) Patterson Pamela R. (Palo Alto CA), Method for controlling a collimated sputtering source.
  15. Farkas, Janos; Anthony, Brian G.; Guvenilir, Abbas; Islam, Mohammed Rabiul; Kolagunta, Venkat; Mendonca, John; Tiwari, Rajesh; Venkatesan, Suresh, Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process.
  16. Ho Yu Q. (Kanata CAX) Jolly Gurvinder (Orleans CAX) Emesh Ismail T. (Cumberland CAX), Method for forming interconnect structures for integrated circuits.
  17. Inoue Minoru (Kawasaki JPX), Method of forming a barrier layer between a silicon substrate and an aluminum electrode of a semiconductor device.
  18. Ding, Peijun; Chiang, Tony; Chin, Barry L., Method of sputtering copper to fill trenches and vias.
  19. Moran Peter L. (3 Falcon Hill ; Lover\s Walk Montenotte ; Cork IEX), Multilayer systems and their method of production.
  20. Tepman, Avi, Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity.
  21. Joshi Rajiv V. (Yorktown Heights NY) Cuomo Jerome J. (Lincolndale NY) Dalal Hormazdyar M. (Milton NY) Hsu Louis L. (Fishkill NY), Refractory metal capped low resistivity metal conductor lines and vias.
  22. Leiphart Shane P., Resputtering to achieve better step coverage of contact holes.
  23. Xu Zheng ; Forster John ; Yao Tse-Yong, Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches.
  24. Lee Sang-in (Kyungki-do KRX) Park Chang-soo (Kyungki-do KRX), Semiconductor device having an improved wiring layer.
  25. Honma Yoshio (Nishitama JPX) Tsunekawa Sukeyoshi (Tokorozawa JPX) Yokoyama Natsuki (Mitaka JPX) Morisaki Hiroshi (Hachioji JPX), Semiconductor device with wiring layer using bias sputtering.
  26. Givens John H. (Boise ID) Elliott Richard L. (Meridian ID), Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features.
  27. Tepman Avi (Cupertino CA) Grunes Howard (Santa Cruz CA) Somekh Sasson (Los Altos Hills CA) Maydan Dan (Los Altos Hills CA), Staged-vacuum wafer processing system and method.
  28. Kitch Vassili, Structure and method for controlling copper diffusion and for utilizing low K materials for copper interconnects in integrated circuit structures.
  29. Vassili Kitch, Structure and method for controlling copper diffusion and for utilizing low K materials for copper interconnects in integrated circuit structures.
  30. Ward Michael G. (Nyack NY), Ultrasonic enhancement of aluminum step coverage and apparatus.
  31. Hong Liubo ; Forster John ; Fu Jianming, Wafer bias ring in a sustained self-sputtering reactor.
  32. Wada Junichi,JPX ; Shima Shohei,JPX, Wiring forming method.

이 특허를 인용한 특허 (54)

  1. Weiner, Kurt H.; Chiang, Tony P.; Francis, Aaron; Schmidt, John, Advanced mixing system for integrated tool having site-isolated reactors.
  2. Klawuhn, Erich R.; Rozbicki, Robert; Dixit, Girish A., Apparatus and methods for deposition and/or etch selectivity.
  3. Klawuhn,Erich R.; Rozbicki,Robert; Dixit,Girish A., Apparatus and methods for deposition and/or etch selectivity.
  4. Pradhan, Anshu A.; Rozbicki, Robert, Atomic layer profiling of diffusion barrier and metal seed layers.
  5. Pradhan, Anshu A.; Rozbicki, Robert, Atomic layer profiling of diffusion barrier and metal seed layers.
  6. Rozbicki,Robert; Danek,Michal, Barrier first method for single damascene trench applications.
  7. Shaviv, Roey; Gopinath, Sanjay; Holverson, Peter; Pradhan, Anshu A., Conformal films on semiconductor substrates.
  8. Shaviv, Roey; Gopinath, Sanjay; Holverson, Peter; Pradhan, Anshu A., Conformal films on semiconductor substrates.
  9. Wu, Hui-Jung; Juliano, Daniel R.; Wu, Wen; Dixit, Girish, Deposition of doped copper seed layers having improved reliability.
  10. Dulkin, Alexander; Vijayendran, Anil; Yu, Tom; Juliano, Daniel R., Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer.
  11. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  12. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  13. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  14. Miller, Steven A.; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom.
  15. Lazovsky, David E.; Malhotra, Sandra G.; Boussie, Thomas R., Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region.
  16. Lazovsky, David E.; Malhotra, Sandra G.; Boussie, Thomas R., Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region.
  17. Lazovsky,David E.; Malhotra,Sandra G.; Boussie,Thomas R., Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region.
  18. Dary, Francois-Charles; Gaydos, Mark; Loewenthal, William; Miller, Steven A.; Rozak, Gary; Volchko, Scott Jeffrey; Zimmermann, Stefan; Stawovy, Michael Thomas, Large-area sputtering targets.
  19. Miller, Steven A.; Kumar, Prabhat, Low-energy method of manufacturing bulk metallic structures with submicron grain sizes.
  20. Pradhan, Anshu A.; Hayden, Douglas B.; Kinder, Ronald L.; Dulkin, Alexander, Method and apparatus for increasing local plasma density in magnetically confined plasma.
  21. Zimmermann, Stefan; Papp, Uwe; Kreye, Heinrich; Schmidt, Tobias, Method for coating a substrate surface and coated product.
  22. Danek, Michal; Rozbicki, Robert, Method for depositing a diffusion barrier for copper interconnect applications.
  23. Chiang, Tony; Yao, Gongda; Ding, Peijun; Chen, Fusen E.; Chin, Barry L.; Kohara, Gene Y.; Xu, Zheng; Zhang, Hong, Method for depositing a diffusion barrier layer and a metal conductive layer.
  24. Rozbicki, Robert T.; Danek, Michal; Klawuhn, Erich R., Method of depositing a diffusion barrier for copper interconnect applications.
  25. Rozbicki, Robert; Danek, Michal; Klawuhn, Erich, Method of depositing a diffusion barrier for copper interconnect applications.
  26. Rozbicki, Robert; Danek, Michal; Klawuhn, Erich, Method of depositing a diffusion barrier for copper interconnect applications.
  27. Dulkin, Alexander; Rairkar, Asit; Greer, Frank; Pradhan, Anshu A.; Rozbicki, Robert, Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer.
  28. Rozbicki, Robert, Methods and apparatus for resputtering process that improves barrier coverage.
  29. Chiang, Tony P.; Lazovsky, David E.; Boussie, Thomas R.; Gorer, Alexander, Methods for discretized processing of regions of a substrate.
  30. Miller, Steven A.; Schmidt-Park, Olaf; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan, Methods of forming sputtering targets.
  31. Miller, Steven A.; Shekhter, Leonid N.; Zimmerman, Stefan, Methods of joining metallic protective layers.
  32. Miller, Steven A.; Shekhter, Leonid N.; Zimmermann, Stefan, Methods of joining metallic protective layers.
  33. Miller, Steven A.; Shekhter, Leonid N.; Zimmermann, Stefan, Methods of joining metallic protective layers.
  34. Miller, Steven A.; Shekhter, Leonid N.; Zimmerman, Stefan, Methods of joining protective metal-clad structures.
  35. Volchko, Scott Jeffrey; Zimmermann, Stefan; Miller, Steven A.; Stawovy, Michael Thomas, Methods of manufacturing high-strength large-area sputtering targets.
  36. Loewenthal, William; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets.
  37. Miller, Steven A.; Dary, Francois-Charles; Gaydos, Mark; Rozak, Gary, Methods of manufacturing large-area sputtering targets by cold spray.
  38. Volchko, Scott Jeffrey; Loewenthal, William; Zimmermann, Stefan; Gaydos, Mark; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets using interlocking joints.
  39. Volchko, Scott Jeffrey; Loewenthal, William; Zimmermann, Stefan; Gaydos, Mark; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets using interlocking joints.
  40. Miller, Steven A.; Kumar, Prabhat; Wu, Rong-chein Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Methods of rejuvenating sputtering targets.
  41. Miller, Steven A.; Schmidt-Park, Olaf; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmerman, Stefan, Methods of rejuvenating sputtering targets.
  42. Lazovsky,David E.; Chiang,Tony P.; Keshavarz,Majid, Molecular self-assembly in substrate processing.
  43. Rozbicki, Robert; van Schravendijk, Bart; Mountsier, Thomas; Wu, Wen, Multistep method of depositing metal seed layers.
  44. Rozbicki, Robert; van Schravendijk, Bart; Mountsier, Tom; Wu, Wen, Multistep method of depositing metal seed layers.
  45. Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein R., Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
  46. Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein Richard, Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
  47. Chiang, Tony P.; Lazovsky, David E.; Malhotra, Sandra G., Processing substrates using site-isolated processing.
  48. Miller, Steven A.; Shekhter, Leonid N.; Zimmerman, Stefan, Protective metal-clad structures.
  49. Kailasam, Sridhar; Rozbicki, Robert; Yu, Chentao; Hayden, Douglas, Resputtering process for eliminating dielectric damage.
  50. Juliano, Daniel R., Selective resputtering of metal seed layers.
  51. Fresco, Zachary; Lang, Chi-I; Malhotra, Sandra G.; Chiang, Tony P.; Boussie, Thomas R.; Kumar, Nitin; Tong, Jinhong; Duong, Anh, Substrate processing including a masking layer.
  52. Weiner, Kurt H.; Chiang, Tony P.; Pinto, Gustavo A., System and method for increasing productivity of combinatorial screening.
  53. Chiang, Tony P.; Lazovsky, David E.; Boussie, Thomas R.; McWaid, Thomas H.; Gorer, Alexander, Systems for discretized processing of regions of a substrate.
  54. Kinder, Ronald L.; Pradhan, Anshu A., Use of ultra-high magnetic fields in resputter and plasma etching.
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