초록 ▼

A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the plate

A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.

대표청구항 ▼

1. A high pressure chamber for processing of a semiconductor substrate comprising:a. a chamber housing comprising a first sealing surface; b. a spacer containing a plurality of injection nozzles, the spacer sealing to the first sealing surface; c. a platen comprising a region for holding the semicon

1. A high pressure chamber for processing of a semiconductor substrate comprising:a. a chamber housing comprising a first sealing surface; b. a spacer containing a plurality of injection nozzles, the spacer sealing to the first sealing surface; c. a platen comprising a region for holding the semiconductor substrate and a second sealing surface; and d. a single mechanical drive mechanism having a single pressure source, the single mechanical drive mechanism coupling the platen to the chamber housing such that in operation the single mechanical drive mechanism separates the second sealing surface from the spacer for loading of the semiconductor substrate and further such that in operation the said single mechanical drive mechanism causes the second sealing surface of the platen to seal to the spacer, such that the spacer, the first sealing surface, and the second sealing surface form and maintain a wafer cavity containing the region for holding the semiconductor substrate during high pressure processing. 2. The high pressure chamber of claim 1 wherein the first sealing surface of the chamber housing comprises an o-ring groove.3. The high pressure chamber of claim 2 further comprising an o-ring within the o-ring groove.4. The high pressure chamber of claim 1 wherein the second sealing surface of the platen comprises an o-ring groove.5. The high pressure chamber of claim 4 further comprising an o-ring within the o-ring groove.6. The high pressure chamber of claim 1 wherein the single mechanical drive mechanism comprises a piston driven by a fluid.7. The high pressure chamber of claim 6 wherein the fluid comprises an incompressible fluid.8. The high pressure chamber of claim 6 wherein the fluid comprises a compressible fluid.9. The high pressure chamber of claim 1 wherein the single mechanical drive mechanism comprises an electro-mechanical drive mechanism.10. The high pressure chamber of claim 9 wherein the electro-mechanical drive mechanism comprises a linear actuator.11. The high pressure chamber of claim 10 wherein the linear actuator comprises a drive screw.12. The high pressure chamber of claim 1, wherein the spacer further contains a plenum coupled to the plurality of injection nozzles, the plenum having a width larger than a width of the plurality of injection nozzles.13. The high pressure processing chamber of claim 12, wherein a ratio of the width of the plenum to the width of the plurality of injection nozzles is at least 3:1.14. The high pressure processing chamber of claim 12, further comprising a supercritical condition generator coupled to the plenum, the supercritical condition generator comprising a heater coupled to a supply source, the supply source comprising a supply vessel.15. The high pressure chamber of claim 1, further comprising a circulation loop coupled to the wafer cavity and configured to maintain a supercritical fluid in a supercritical state and to circulate the supercritical fluid through the wafer cavity wherein the high pressure processing chamber, further comprising a pump and a filter coupled to the circulation loop.16. A high pressure chamber for processing a semiconductor substrate comprising:a. a chamber housing comprising a first sealing surface; b. a spacer containing a plurality of injection nozzles, the spacer configured to seal to the first sealing surface; c. a platen comprising a second sealing surface and a region for holding the semiconductor substrate; d. a single mechanical drive mechanism having a single pressure source, the single mechanical drive mechanism coupling the platen to the chamber housing such that in operation the single mechanical drive mechanism separates the second sealing surface from the spacer for loading the semiconductor substrate and further such that in operation the said single mechanical drive mechanism causes the second sealing surface of the platen to seal to the spacer, such that the spacer, the first sealing surface, and the second sealing surface form a wafer cavity containing the region for holding the semiconductor substrate; and e. a mechanical clamp coupled to the chamber housing and the platen such that in operation the mechanical clamp maintains the wafer cavity during high pressure processing. 17. An apparatus for high pressure processing of a semiconductor substrate comprising:a. a pressure chamber frame; b. a single piston coupled to the pressure chamber frame and comprising a piston body and a piston neck, the pressure chamber frame and the piston body forming a first fluid cavity; c. a sealing plate coupled to the pressure chamber frame, the sealing plate in conjunction with the pressure chamber frame, the piston body, and the piston neck forming a second fluid cavity; d. a platen coupled to the piston neck, the platen comprising a region for holding the semiconductor substrate and a first sealing surface; e. a spacer having a plurality of injection nozzles configured to couple to a supply source; and f. a top lid coupled to the pressure chamber frame and comprising a second sealing surface, the second sealing surface sealing to the spacer; the first sealing surface of the platen and the spacer configured such that in operation the said piston body can be moved using a single pressure within the first fluid cavity so that the first sealing surface seals to the spacer to form a wafer cavity and to maintain the wafer cavity during high pressure processing, and in further operation the piston body can be moved so that the first sealing surface is separated from the spacer, thereby allowing the semiconductor substrate to be loaded into and unloaded from the pressure chamber frame. 18. The apparatus of claim 17 wherein the first sealing surface and the second sealing surface are configured to form the wafer cavity and to maintain the wafer cavity with a supercritical environment therein.19. The apparatus of claim 17 wherein the first sealing surface and the second sealing surface are configured to form the wafer cavity and to maintain the wafer cavity with a non-supercritical environment therein.