IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0792914
(2004-03-05)
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우선권정보 |
FR-0002735 (2003-03-05) |
발명자
/ 주소 |
- Mathieu, Yannick
- Paillaud, Jean-Louis
- Caullet, Philippe
- Bats, Nicolas
- Simon, Laurent
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출원인 / 주소 |
- Institut Francais du Petrole
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대리인 / 주소 |
Millen, White, Zelano &
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인용정보 |
피인용 횟수 :
1 인용 특허 :
6 |
초록
▼
The invention concerns a crystalline solid, designated IM-10, which has the X ray diffraction diagram given below. Said solid has a chemical composition, expressed as the anhydrous base, in terms of moles of oxides, in accordance with the formula XO2:mYO2:pZ2O3:qR2/nO:sF, in which R represents one o
The invention concerns a crystalline solid, designated IM-10, which has the X ray diffraction diagram given below. Said solid has a chemical composition, expressed as the anhydrous base, in terms of moles of oxides, in accordance with the formula XO2:mYO2:pZ2O3:qR2/nO:sF, in which R represents one or more cation(s) with valency n, X represents one or more tetravalent element(s) other than germanium, Y represents germanium, Z represents at least one trivalent element and F is fluorine.
대표청구항
▼
1. A crystalline solid IM-10 with an X ray diffraction diagram including at least the peaks listed in the table below:dhkl (Å)2theta (degrees)I/I014.186.23vw8.6710.19VS7.0712.50vw6.5513.50S6.4413.73vw5.8715.09vw4.7618.60mw4.5519.47vw4.0322.02m3.9122.69mw3.8323.20vw3.7423.77vw3.6924.04w3.5425.12w3.30
1. A crystalline solid IM-10 with an X ray diffraction diagram including at least the peaks listed in the table below:dhkl (Å)2theta (degrees)I/I014.186.23vw8.6710.19VS7.0712.50vw6.5513.50S6.4413.73vw5.8715.09vw4.7618.60mw4.5519.47vw4.0322.02m3.9122.69mw3.8323.20vw3.7423.77vw3.6924.04w3.5425.12w3.3026.93vw3.2827.18vw3.2227.68vw3.1028.74vw3.0828.92vw2.9730.00vw2.9330.46vw2.8930.92vw2.8831.03vw2.8731.17w2.8031.98vw2.7532.47vw2.6733.56vw2.5235.64vw2.4936.03vw2.4836.20vw2.4436.79vw2.4336.98vw2.3837.72w2.3638.07vw2.3438.31vwin which VS=very strong; m=medium; w=weak; S=strong; mw=medium weak; vw=very weak, and having a chemical composition, expressed as the anhydrous base in terms of the moles of oxides, defined by the following general formula: XO2:mYO2:pZ2O3:qR2/nO:sF (I), in which R represents one or more cation(s) with valency n, X represents one or more tetravalent element(s) other than germanium, Y represents germanium, Z represents at least one trivalent element and F is fluorine, m, p, q, s respectively representing the number of moles of YO2, Z2O3, R2/nO and F and m is in the range 0.1 to 4, p is in the range 0 to 0.5, q and s are in the range 0.01 to 0.7, the ratio {(1+m)/p} being 5 or more. 2. A crystalline solid IM-10 according to claim 1, in which X is silicon.3. A crystalline solid IM-10 according to claim 1, in which Z is aluminium.4. A process for preparing a crystalline solid IM-10 in accordance with claim 1, consisting of mixing at least one source of at least one oxide XO2, optionally at least one source of an oxide YO2, optionally at least one source of at least one oxide Z2O3, optionally at least one source of an oxide M2/wO and at least one organic nitrogen-containing cation R or at least one precursor of an organic nitrogen-containing cation or at least one decomposition product of an nitrogen-containing organic cation, then carrying out a hydrothermal treatment on said mixture until said crystalline solid IM-10 is formed.5. A process for preparing a crystalline solid IM-10 according to claim 4, in which the molar composition of the reaction mixture is such that:(XO2 + YO2)/Z2O3at least 5;M2/wO/(XO2 + YO2)??0 to 3;H2O/(XO2 + YO2)??1 to 50;R/(XO2 + YO2)0.1 to 3;F/(XO2 + YO2)0.1 to 3;YO2/XO2??0 to 1;LaS/XO2??0 to 0.5.6. A preparation process according to claim 4, in which R is the hexamethonium cation [(H3C)3?N?(CH2)6?N?(CH3)3]2+.7. A process according to claim 4, in which seeds are added to the reaction mixture.
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