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Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/336
  • H01L-021/469
출원번호 US-0209581 (2002-07-30)
발명자 / 주소
  • Ahn, Kie Y.
  • Forbes, Leonard
출원인 / 주소
  • Micron Technology Inc.
대리인 / 주소
    Schwegman, Lundberg, Woessner &
인용정보 피인용 횟수 : 203  인용 특허 : 66

초록

A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition of HfO2 using a HfI4 precursor fo

대표청구항

1. A method of forming a dielectric film comprising:forming a layer of hafnium oxide on a substrate in a reaction chamber by atomic layer deposition using a HfI4 precursor; and forming a layer of zirconium oxide on the layer of hafnium oxide to form a HfO2/ZrO2 composite, wherein the HfO2/ZrO2 compo

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이 특허를 인용한 특허 (203)

  1. Ahn,Kie Y.; Forbes,Leonard, ALD of amorphous lanthanide doped TiOfilms.
  2. Ahn,Kie Y.; Forbes,Leonard, ALD of amorphous lanthanide doped TiOfilms.
  3. Ahn, Kie Y.; Forbes, Leonard, ALD of silicon films on germanium.
  4. Ahn, Kie Y.; Forbes, Leonard, Apparatus containing cobalt titanium oxide.
  5. Ahn, Kie Y.; Forbes, Leonard, Apparatus having a dielectric containing scandium and gadolinium.
  6. Ahn, Kie Y.; Forbes, Leonard, Apparatus having a dielectric containing scandium and gadolinium.
  7. Ahn, Kie Y.; Forbes, Leonard, Apparatus having a dielectric containing scandium and gadolinium.
  8. Ahn, Kie Y.; Forbes, Leonard, Apparatus having a lanthanum-metal oxide semiconductor device.
  9. Marsh, Eugene P.; Kraus, Brenda D, Apparatus including rhodium-based charge traps.
  10. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed.
  11. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposited Zr-Sn-Ti-O films using TiI.
  12. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposited ZrTiOfilms.
  13. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposited barium strontium titanium oxide films.
  14. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposited dielectric layers.
  15. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposited hafnium tantalum oxide dielectrics.
  16. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposited lanthanide doped TiOx dielectric films.
  17. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposited titanium silicon oxide films.
  18. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposited titanium-doped indium oxide films.
  19. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposited zirconium silicon oxide films.
  20. Derderian, Garo J.; Sandhu, Gurtej Singh, Atomic layer deposition and conversion.
  21. Derderian, Garo J.; Sandhu, Gurtej Singh, Atomic layer deposition and conversion.
  22. Forbes,Leonard; Ahn,Kie Y., Atomic layer deposition of CMOS gates with variable work functions.
  23. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposition of CeO/AlOfilms as gate dielectrics.
  24. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposition of CeO/AlOfilms as gate dielectrics.
  25. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposition of GdScO3 films as gate dielectrics.
  26. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics.
  27. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposition of ZrHfSnOfilms as high k gate dielectrics.
  28. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposition of ZrN/ZrOfilms as gate dielectrics.
  29. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposition of ZrN/ZrOfilms as gate dielectrics.
  30. Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer.
  31. Eldridge,Jerome M.; Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators.
  32. Ahn,Kie Y.; Forbes,Leonard, Atomic layer-deposited hafnium aluminum oxide.
  33. Lindert, Nick; Cea, Stephen M., Bulk non-planar transistor having strained enhanced mobility and methods of fabrication.
  34. Doyle, Brian S.; Jin, Been-Yih; Kavalieros, Jack T.; Datta, Suman; Brask, Justin K.; Chau, Robert S., CMOS devices with a single work function gate electrode and method of fabrication.
  35. Ahn, Kie Y.; Forbes, Leonard, Cobalt titanium oxide dielectric films.
  36. Ahn, Kie Y.; Forbes, Leonard, Conductive layers for hafnium silicon oxynitride.
  37. Ahn, Kie Y.; Forbes, Leonard, Conductive layers for hafnium silicon oxynitride films.
  38. Ahn, Kie Y.; Forbes, Leonard, Conductive layers for hafnium silicon oxynitride films.
  39. Kraus, Brenda D; Marsh, Eugene P., Conductive nanoparticles.
  40. Ahn, Kie Y.; Forbes, Leonard, Deposition of ZrA1ON films.
  41. Eldridge,Jerome M.; Ahn,Kie Y.; Forbes,Leonard, Deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators.
  42. Ahn,Kie Y.; Forbes,Leonard, Devices with HfSiON dielectric films which are Hf-O rich.
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  48. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Dielectrics containing at least one of a refractory metal or a non-refractory metal.
  49. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Dielectrics containing at least one of a refractory metal or a non-refractory metal.
  50. Ahn,Kie Y.; Forbes,Leonard, Electronic apparatus with deposited dielectric layers.
  51. Ahn, Kie Y.; Forbes, Leonard, Electronic devices including barium strontium titanium oxide films.
  52. Ahn, Kie Y.; Forbes, Leonard, Electronic devices including barium strontium titanium oxide films.
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  63. Forbes, Leonard; Eldridge, Jerome M., Flash memory with low tunnel barrier interpoly insulators.
  64. Ahn, Kie Y.; Forbes, Leonard, Gallium lanthanide oxide films.
  65. Ahn, Kie Y.; Forbes, Leonard, Gallium lanthanide oxide films.
  66. Ahn, Kie Y.; Forbes, Leonard, Gallium lathanide oxide films.
  67. Gealy, Dan; Bhat, Vishwanath; Srividya, Cancheepuram V.; Rocklein, M. Noel, Graded dielectric layers.
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  72. Ahn, Kie Y.; Forbes, Leonard, Hafnium tantalum oxide dielectrics.
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  76. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Hafnium tantalum oxynitride dielectric.
  77. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Hafnium tantalum oxynitride high-k dielectric and metal gates.
  78. Ahn, Kie Y.; Forbes, Leonard, Hafnium titanium oxide films.
  79. Ahn, Kie Y.; Forbes, Leonard, Hafnium titanium oxide films.
  80. Ahn, Kie Y.; Forbes, Leonard, HfAlOfilms for gate dielectrics.
  81. Govindarajan, Shrinivas, High dielectric constant materials.
  82. Ahn, Kie Y.; Forbes, Leonard, High-K gate dielectric oxide.
  83. Ahn, Kie Y.; Forbes, Leonard, High-k dielectrics with gold nano-particles.
  84. Ahn, Kie Y.; Forbes, Leonard, High-k dielectrics with gold nano-particles.
  85. Ahn, Kie Y.; Forbes, Leonard, High-quality praseodymium gate dielectrics.
  86. Ahn, Kie Y.; Forbes, Leonard, Highly reliable amorphous high-K gate oxide ZrO2.
  87. Ahn,Kie Y.; Forbes,Leonard, Highly reliable amorphous high-k gate oxide ZrO2.
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  89. Chang, Peter L. D.; Doyle, Brian S., Independently accessed double-gate and tri-gate transistors in same process flow.
  90. Ahn,Kie Y.; Forbes,Leonard, Iridium/zirconium oxide structure.
  91. Ahn,Kie Y.; Forbes,Leonard, Lanthanide doped TiOdielectric films.
  92. Ahn,Kie Y.; Forbes,Leonard, Lanthanide doped TiOdielectric films.
  93. Ahn,Kie Y.; Forbes,Leonard, Lanthanide doped TiOdielectric films by plasma oxidation.
  94. Ahn,Kie Y.; Forbes,Leonard, Lanthanide doped TiOx dielectric films by plasma oxidation.
  95. Ahn, Kie Y.; Forbes, Leonard, Lanthanide doped TiOx films.
  96. Ahn,Kie Y.; Forbes,Leonard, Lanthanide oxide / hafnium oxide dielectric layers.
  97. Ahn,Kie Y.; Forbes,Leonard, Lanthanide oxide / hafnium oxide dielectric layers.
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  100. Ahn,Kie Y.; Forbes,Leonard, Lanthanide oxide/hafnium oxide dielectrics.
  101. Ahn, Kie Y.; Forbes, Leonard, Lanthanum aluminum oxynitride dielectric films.
  102. Ahn,Kie Y.; Forbes,Leonard, Lanthanum aluminum oxynitride dielectric films.
  103. Ahn,Kie Y.; Forbes,Leonard, Lanthanum hafnium oxide dielectrics.
  104. Ahn,Kie Y.; Forbes,Leonard, Lanthanum hafnium oxide dielectrics.
  105. Ahn,Kie Y.; Forbes,Leonard, Low-temperature growth high-quality ultra-thin praseodymium gate dieletrics.
  106. Ahn, Kie Y.; Forbes, Leonard, Magnesium-doped zinc oxide structures and methods.
  107. Ahn,Kie Y.; Forbes,Leonard, Magnesium-doped zinc oxide structures and methods.
  108. Heuer, Daniel A.; Pawar, Vivek; Scott, Marcus Lee; Jani, Shilesh C., Medical implants having a porous coated surface.
  109. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide nanolaminates.
  110. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide nanolaminates.
  111. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide-conductor nanolaminates.
  112. Forbes, Leonard; Farrar, Paul A.; Ahn, Kie Y., Metal-substituted transistor gates.
  113. Forbes, Leonard; Farrar, Paul A.; Ahn, Kie Y., Metal-substituted transistor gates.
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  116. Brask, Justin K.; Chau, Robert S.; Datta, Suman; Doczy, Mark L.; Doyle, Brian S.; Kavalieros, Jack T.; Majumdar, Amlan; Metz, Matthew V.; Radosavljevic, Marko, Method for fabricating transistor with thinned channel.
  117. Brask, Justin K.; Chau, Robert S.; Datta, Suman; Doczy, Mark L.; Doyle, Brian S.; Kavalieros, Jack T.; Majumdar, Amlan; Metz, Matthew V.; Radosavljevic, Marko, Method for fabricating transistor with thinned channel.
  118. Misra,Ashutosh; Fisher,Matthew; Jurcik,Benjamin; Dussarrat,Christian; Tsukada,Eri; Girard,Jean Marc, Method for forming dielectric or metallic films.
  119. Kraus, Brenda D; Marsh, Eugene P., Method for making conductive nanoparticle charge storage element.
  120. Ahn,Kie Y.; Forbes,Leonard, Method including forming gate dielectrics having multiple lanthanide oxide layers.
  121. Ahn, Kie Y.; Forbes, Leonard, Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer.
  122. Brask,Justin K.; Doyle,Brian S.; Kavalleros,Jack; Doczy,Mark; Shah,Uday; Chau,Robert S., Method of forming a metal oxide dielectric.
  123. Ahn, Kie Y.; Forbes, Leonard, Method of forming an apparatus having a dielectric containing cerium oxide and aluminum oxide.
  124. Ahn, Kie Y.; Forbes, Leonard, Method of forming apparatus having oxide films formed using atomic layer deposition.
  125. Clark, Robert D., Method of forming crystallographically stabilized doped hafnium zirconium based films.
  126. Brask, Justin K.; Doyle, Brian S.; Kavalieros, Jack; Doczy, Mark; Shah, Uday; Chau, Robert S., Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material.
  127. Brask, Justin K.; Doyle, Brian S.; Shah, Uday; Chau, Robert S., Method of patterning a film.
  128. Hunter, Gordon; Jani, Shilesh C.; Pawar, Vivek, Method of providing a zirconium surface and resulting product.
  129. Hunter, Gordon; Jani, Shilesh; Pawar, Vivek, Method of providing a zirconium surface and resulting product.
  130. Hunter, Gordon; Jani, Shilesh C.; Pawar, Vivek, Method of surface oxidizing zirconium and zirconium alloys and resulting product.
  131. Ahn, Kie Y.; Forbes, Leonard, Methods for atomic-layer deposition.
  132. Ahn,Kie Y.; Forbes,Leonard, Methods for forming a lanthanum-metal oxide dielectric layer.
  133. Marsh, Eugene P.; Kraus, Brenda D, Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps.
  134. Ahn, Kie Y.; Forbes, Leonard, Methods of forming an insulating metal oxide.
  135. Ahn, Kie Y.; Forbes, Leonard, Methods of forming titanium silicon oxide.
  136. Ahn, Kie Y.; Forbes, Leonard, Methods of forming zirconium aluminum oxide.
  137. Ahn,Kie Y., Methods, systems, and apparatus for uniform chemical-vapor depositions.
  138. Tao, Meng; Ali, Muhammad Y., Modification of semiconductor surfaces in a liquid.
  139. Forbes,Leonard, NROM flash memory with a high-permittivity gate dielectric.
  140. Shah, Uday; Doyle, Brian S.; Brask, Justin K.; Chau, Robert S.; Letson, Thomas A., Nonplanar device with thinned lower body portion and method of fabrication.
  141. Shah, Uday; Doyle, Brian S.; Brask, Justin K.; Chau, Robert S.; Letson, Thomas A., Nonplanar device with thinned lower body portion and method of fabrication.
  142. Shah, Uday; Doyle, Brian S.; Brask, Justin K.; Chau, Robert S.; Letson, Thomas A., Nonplanar device with thinned lower body portion and method of fabrication.
  143. Shah, Uday; Doyle, Brian S.; Brask, Justin K.; Chau, Robert S.; Letson, Thomas A., Nonplanar device with thinned lower body portion and method of fabrication.
  144. Shah, Uday; Doyle, Brian; Brask, Justin K.; Chau, Robert S.; Letson, Thomas A., Nonplanar device with thinned lower body portion and method of fabrication.
  145. Shah, Uday; Doyle, Brian; Brask, Justin K.; Chau, Robert S.; Letson, Thomas A., Nonplanar device with thinned lower body portion and method of fabrication.
  146. Shah, Uday; Doyle, Brian; Brask, Justin K.; Chau, Robert S.; Letson, Thomas A., Nonplanar device with thinned lower body portion and method of fabrication.
  147. Hareland, Scott A.; Chau, Robert S.; Doyle, Brian S.; Rios, Rafael; Linton, Tom; Datta, Suman, Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication.
  148. Hareland, Scott A.; Chau, Robert S.; Doyle, Brian S.; Rios, Rafael; Linton, Tom; Datta, Suman, Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication.
  149. Brask, Justin K.; Dovle, Brian S.; Kavalleros, Jack; Doczy, Mark; Shah, Uday; Chau, Robert S., Nonplanar transistors with metal gate electrodes.
  150. Doh,Seok Joo; Jung,Hyung suk; Lee,Nae in; Lee,Jong ho; Kim,Yun seok, Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices.
  151. Kavalieros, Jack T.; Brask, Justin K.; Doyle, Brian S.; Shah, Uday; Datta, Suman; Doczy, Mark L.; Metz, Matthew V.; Chau, Robert S., Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby.
  152. Ahn, Kie Y.; Forbes, Leonard, Ruthenium for a dielectric containing a lanthanide.
  153. Ahn, Kie Y.; Forbes, Leonard, Ruthenium for a dielectric containing a lanthanide.
  154. Ahn, Kie Y.; Forbes, Leonard, Ruthenium layer for a dielectric layer containing a lanthanide oxide.
  155. Park, Ki Yeon; Yoon, Kyoung Ryul; Choi, Dae Sik; Choi, Han Mei; Lee, Seung Hwan, Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same.
  156. Park, Ki-Yeon; Yoon, Kyoung-Ryul; Choi, Dae-Sik; Choi, Han-Mei; Lee, Seung-Hwan, Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same.
  157. Brask, Justin K.; Kavalieros, Jack; Doyle, Brian S.; Shah, Uday; Datta, Suman; Majumdar, Amlan; Chau, Robert S., Semiconductor device structures and methods of forming semiconductor structures.
  158. Brask, Justin K.; Kavalieros, Jack; Doyle, Brian S.; Shah, Uday; Datta, Suman; Majumdar, Amlan; Chau, Robert S., Semiconductor device structures and methods of forming semiconductor structures.
  159. Brask, Justin K.; Kavalieros, Jack; Doyle, Brian S.; Shah, Uday; Datta, Suman; Majumdar, Amlan; Chau, Robert S., Semiconductor device structures and methods of forming semiconductor structures.
  160. Brask, Justin K.; Kavalieros, Jack; Doyle, Brian S.; Shah, Uday; Datta, Suman; Majumdar, Amlan; Chau, Robert S., Semiconductor device structures and methods of forming semiconductor structures.
  161. Chiang, Chen-Kuo; Lin, Chun-Hsien, Semiconductor process.
  162. Forbes,Leonard; Ahn,Kie Y.; Bhattacharyya,Arup, Silicon lanthanide oxynitride films.
  163. Ahn, Kie Y.; Forbes, Leonard, Silicon on germanium.
  164. Ahn, Kie Y.; Forbes, Leonard, Silicon on germanium.
  165. Ahn, Kie Y.; Forbes, Leonard, Silicon on germanium.
  166. Hudait, Mantu K.; Shaheen, Mohamad A.; Chow, Loren A.; Tolchinsky, Peter G.; Fastenau, Joel M.; Loubychev, Dmitri; Liu, Amy W. K., Stacking fault and twin blocking barrier for integrating III-V on Si.
  167. Rakshit, Titash; Giles, Martin; Pillarisetty, Ravi; Kavalieros, Jack T., Stress in trigate devices using complimentary gate fill materials.
  168. Rakshit, Titash; Giles, Martin; Pillarisetty, Ravi; Kavalieros, Jack T., Stress in trigate devices using complimentary gate fill materials.
  169. Rakshit, Titash; Giles, Martin; Pillarisetty, Ravi; Kavalieros, Jack T., Stress in trigate devices using complimentary gate fill materials.
  170. Rakshit, Titash; Giles, Martin; Pillarisetty, Ravi; Kavalieros, Jack T., Stress in trigate devices using complimentary gate fill materials.
  171. Rakshit, Titash; Giles, Martin; Pillarisetty, Ravi; Kavalieros, Jack T., Stress in trigate devices using complimentary gate fill materials.
  172. Ahn, Kie Y.; Forbes, Leonard, Structures containing titanium silicon oxide.
  173. Ahn, Kie Y.; Forbes, Leonard, Systems with a gate dielectric having multiple lanthanide oxide layers.
  174. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Tantalum aluminum oxynitride high-K dielectric.
  175. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Tantalum aluminum oxynitride high-κ dielectric.
  176. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Tantalum lanthanide oxynitride films.
  177. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Tantalum silicon oxynitride high-K dielectrics and metal gates.
  178. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Tantalum silicon oxynitride high-K dielectrics and metal gates.
  179. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Tantalum silicon oxynitride high-k dielectrics and metal gates.
  180. Ahn, Kie Y.; Forbes, Leonard, Titanium aluminum oxide films.
  181. Kraus, Brenda D; Marsh, Eugene P., Titanium nitride films.
  182. Ahn, Kie Y.; Forbes, Leonard, Titanium-doped indium oxide films.
  183. Ahn, Kie Y.; Forbes, Leonard, Titanium-doped indium oxide films.
  184. Forbes, Leonard; Cloud, Eugene H.; Ahn, Kie Y., Transmission lines for CMOS integrated circuits.
  185. Hareland, Scott A.; Chau, Robert S.; Doyle, Brian S.; Datta, Suman; Jin, Been-Yih, Tri-gate transistor device with stress incorporation layer and method of fabrication.
  186. Hareland, Scott A.; Chau, Robert S.; Doyle, Brian S.; Datta, Suman; Jin, Been-Yih, Tri-gate transistor device with stress incorporation layer and method of fabrication.
  187. Ahn, Kie Y.; Forbes, Leonard, Zirconium titanium oxide films.
  188. Ahn, Kie Y.; Forbes, Leonard, Zirconium-doped tantalum oxide films.
  189. Ahn, Kie Y.; Forbes, Leonard, Zirconium-doped tantalum oxide films.
  190. Ahn, Kie Y.; Forbes, Leonard, Zirconium-doped tantalum oxide films.
  191. Ahn, Kie Y.; Forbes, Leonard, Zirconium-doped tantalum oxide films.
  192. Ahn, Kie Y.; Forbes, Leonard, Zirconium-doped tantalum oxide films.
  193. Ahn, Kie Y.; Forbes, Leonard, Zr.
  194. Ahn,Kie Y.; Forbes,Leonard, Zr--Sn--Ti--O films.
  195. Ahn, Kie Y.; Forbes, Leonard, Zr-Sn-Ti-O films.
  196. Ahn, Kie Y.; Forbes, Leonard, Zr-Sn-Ti-O films.
  197. Ahn, Kie Y.; Forbes, Leonard, Zr-substituted BaTiO.
  198. Ahn, Kie Y.; Forbes, Leonard, Zr-substituted BaTiO3 films.
  199. Ahn, Kie Y.; Forbes, Leonard, Zr-substituted BaTiO3 films.
  200. Ahn, Kie Y.; Forbes, Leonard, ZrA1ON films.
  201. Ahn, Kie Y.; Forbes, Leonard, ZrAION films.
  202. Ahn, Kie Y.; Forbes, Leonard, ZrAlON films.
  203. Ahn, Kie Y.; Forbes, Leonard, ZrXHfYSn1-X-YO2 films as high K gate dielectrics.
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