IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0190516
(2002-07-09)
|
우선권정보 |
JP-0211952 (2001-07-12) |
§371/§102 date |
20030909
(20030909)
|
발명자
/ 주소 |
- Taniyama, Tomoshi
- Tometsuka, Kouji
- Yanagawa, Shusaku
|
출원인 / 주소 |
- Hitachi Kokusai Electric Inc.
- Sony Corporation
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
14 |
초록
▼
A substrate processing apparatus and a method for manufacturing a semiconductor device can supply the vapor of the raw material to the substrate without fail. A main heater 22 is prepared outside the outer tube 21, an inner tube 23 is prepared inside the outer tube 21, a cap 24 that can be lifted an
A substrate processing apparatus and a method for manufacturing a semiconductor device can supply the vapor of the raw material to the substrate without fail. A main heater 22 is prepared outside the outer tube 21, an inner tube 23 is prepared inside the outer tube 21, a cap 24 that can be lifted and lowered is inserted in the inner tube 23, a boat 25 is mounted on the cap 24, a raw material sublimation portion 46 and a heat insulating portion 36 are prepared on the cap 24, a heater portion 45 is set up with possible attachment and detachment on the cap 24, a sublimation heater 26 of the heater portion 45 is located inside the reaction chamber, a raw material loading board 34 of the raw material sublimation portion 46 is prepared on the upper portion of the sublimation heater 26, a plurality of pole members 35 are prepared around the raw material loading board 34, the heat insulation portion 36 is supported by the pole member 35, and the heat insulating portion 36 is located between the raw material sublimation portion 46 and the substrate processing area, and the heat insulating portion 36 is packed with a quartz wool.
대표청구항
▼
1. A substrate processing apparatus comprising:a boat on which a plurality of substrates are supported and which is located in a substrate processing area set in a reaction chamber; a main heater which heats the plurality of substrates in the reaction chamber, the main heater being located outside t
1. A substrate processing apparatus comprising:a boat on which a plurality of substrates are supported and which is located in a substrate processing area set in a reaction chamber; a main heater which heats the plurality of substrates in the reaction chamber, the main heater being located outside the reaction chamber; a sublimation heater located in the reaction chamber; a raw material sublimation portion on which a raw material is mounted and which is located in the reaction chamber; and a heat insulation portion located in the reaction chamber, wherein the sublimation heater is located in a vicinity of and below the raw material sublimation portion, at least while the raw material is sublimated by the sublimation heater and a sublimated material is supplied to a surface of the plurality of substrates, the heat insulation portion is located between the raw material sublimation portion and a substrate processing area and is located over the raw material and the sublimation heater without directly contacting the raw material and the sublimation heater, the raw material sublimated by the sublimation heater is caused to flow upward in a flowing direction to be supplied to the plurality of substrates, and the plurality of substrates are supported on the boat so as to be arranged in the flowing direction of the sublimated raw material, and also supported horizontally so that each surface is directed upward. 2. A substrate processing apparatus according to claim 1, wherein the heat insulation portion comprises a box shaped member in which a quarts wool is packed.3. A substrate processing apparatus according to claim 1, wherein the heating temperature of the sublimation heater is set at a temperature over a sublimation temperature of the raw material.4. A substrate processing apparatus according to claim 1, wherein after a temperature of said main heater reaches a temperature at which said substrate is processed, said main heater and sublimation heater are controlled so that a temperature of said sublimation heater reaches a temperature at which said raw material is sublimated.5. A substrate processing apparatus according to claim 1, wherein when a temperature of said raw material reaches a temperature at which said raw material is sublimated, said main heater and sublimation heater are controlled so that a temperature of said substrate reaches a temperature at which said substrate is processed.6. A substrate processing apparatus according to claim 1, wherein said sublimation heater comprises a base board and a heater element, and a susceptor for preventing metal contamination is mounted on an upper surface of said base board.7. A substrate processing apparatus comprising:a boat on which a plurality of substrates are supported and which is located in a substrate processing area set in a reaction chamber; a main heater which heats the plurality of substrates in the reaction chamber, the main heater being located outside the reaction chamber; a sublimation heater located in the reaction chamber; a raw material sublimation portion on which a raw material is mounted and which is located in the reaction chamber; and a heat insulation portion which is located between the raw material sublimation portion and a substrate processing area in the reaction chamber, wherein the raw material sublimation portion is located below the substrate processing area. the sublimation heater is located in a vicinity of and below the raw material sublimation portion, a gas of the raw material sublimated by the sublimation heater flows past the outside of the heat insulation portion, from the raw material sublimation portion to the substrate processing area, and the plurality of substrates are supported on the boat so as to be arranged in a flowing direction of the sublimated raw material, and also supported horizontally so that each surface is directed upward. 8. The substrate processing apparatus according to claim 7, wherein the heat insulation portion is located over the raw material and the sublimation heater without directly contacting the raw material and the sublimation heater.9. The substrate processing apparatus according to claim 7, wherein the heat insulation portion is located between the raw material sublimation portion and the substrate processing area, at least while a sublimated material is supplied to a surface of the substrate.10. The substrate processing apparatus according to claim 7, wherein the heat insulation portion is located between the raw material sublimation portion and the substrate processing area and is located over the raw material and the sublimation heater without directly contacting the raw material and the sublimation heater, at least while a sublimated material is supplied to a surface of the substrate.
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