IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0570223
(2000-05-12)
|
우선권정보 |
JP-0134992 (1999-05-14) |
§371/§102 date |
20021127
(20021127)
|
발명자
/ 주소 |
- Murakami, Satoshi
- Hirakata, Yoshiharu
- Fujimoto, Etsuko
- Yamazaki, Yu
- Yamazaki, Shunpei
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
Cook, Alex, McFarron, Manzo, Cummings &
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
55 |
초록
▼
A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterize
A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.
대표청구항
▼
1. A semiconductor device comprising:a thin film transistor formed over a substrate, said thin film transistor comprising at least a source region, a drain region, a channel forming region, and a gate electrode with a gate insulating film interposed therebetween; a pixel comprising a pixel electrode
1. A semiconductor device comprising:a thin film transistor formed over a substrate, said thin film transistor comprising at least a source region, a drain region, a channel forming region, and a gate electrode with a gate insulating film interposed therebetween; a pixel comprising a pixel electrode connected with said source or said drain region and comprising a storage capacitor; and a spacer, wherein said storage capacitor comprises a shielding film provided over said thin film transistor with an insulating film interposed therebetween, an insulating layer covering said shielding film, and said pixel electrode provided in contact with said insulating layer, wherein said insulating layer has a hole which is filled with an insulating material comprising a resin material, and wherein said insulating material and said spacer comprise a same material. 2. A semiconductor device according to claim 1, wherein said shielding film comprises a material which contains mainly aluminum.3. A semiconductor device according to claim 1, wherein said pixel electrode exists over said region which is filled with said insulating layer comprising said resin material.4. A semiconductor device according to claim 1, wherein said spacer is formed in a region where a sealing member is formed, and wherein said sealing member is formed over a peripheral portion of said substrate.5. A semiconductor device according to claim 1, wherein said spacer is formed in a region where a sealing member is formed and in a pixel portion, and wherein said sealing member is formed over a peripheral portion of said substrate.6. A semiconductor device according to claim 1, wherein said spacer is formed in a region where a sealing member is formed and in a region between a driver circuit and a pixel portion, and wherein said sealing member is formed over a peripheral portion of said substrate.7. A semiconductor device according to claim 1, wherein said spacer is formed in a region between a driver circuit and a pixel portion and in a pixel portion.8. A semiconductor device according to claim 1, wherein said semiconductor device is a liquid crystal display device.9. A semiconductor device according to claim 1, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.10. A semiconductor device comprising:a thin film transistor formed over a substrate, said thin film transistor comprising at least a source region, a drain region, a channel forming region, and a gate electrode with a gate insulating film interposed therebetween; and a pixel comprising a pixel electrode connected with said source or said drain region and comprising a storage capacitor; and a spacer, wherein said storage capacitor comprises a shielding film provided over said thin film transistor with an insulating film interposed therebetween, an oxide of said shielding film covering said shielding film, and said pixel electrode provided in contact with said oxide, wherein said oxide has a region which is filled with an insulating material comprising a resin material, and wherein said insulating material and said spacer comprise a same material. 11. A semiconductor device according to claim 10, wherein said shielding film comprises a material which contains mainly aluminum.12. A semiconductor device according to claim 10, wherein said pixel electrode exists over said region which is filled with said insulating material made of said resin material.13. A semiconductor device according to claim 10, wherein said spacer is formed in a region where a sealing member is formed, and wherein said sealing member is formed over a peripheral portion of said substrate.14. A semiconductor device according to claim 10, wherein said spacer is formed in a region where a sealing member is formed and in a pixel portion, and wherein said sealing member is formed over a peripheral portion of said substrate.15. A semiconductor device according to claim 10, wherein said spacer is formed in a region where a sealing member is formed and in a region between a driver circuit and a pixel portion, and wherein said sealing member is formed over a peripheral portion of said substrate.16. A semiconductor device according to claim 10, wherein said spacer is formed in a region between a driver circuit and a pixel portion and in a pixel portion.17. A semiconductor device according to claim 10, wherein said semiconductor device is a liquid crystal display device.18. A semiconductor device according to claim 10, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.19. A semiconductor device comprising:a thin film transistor formed on an insulator, said thin film transistor comprising at least a source region, a drain region, a channel forming region, and a gate electrode with a gate insulating film interposed therebetween; a pixel comprising a pixel electrode connected with said source or said drain region and comprising a storage capacitor; and a spacer, wherein said storage capacitor comprises a shielding film provided over said thin film transistor with an insulating film interposed therebetween, an insulating layer covering said shielding film, and said pixel electrode provided in contact with said insulating layer, wherein said insulating layer has a region which is filled with an insulating material comprising a resin material, and wherein said spacer is formed over a contact portion where said thin film transistor and said pixel electrode are connected with each other. 20. A semiconductor device according to claim 19, wherein said shielding film comprises a material which contains mainly aluminum.21. A semiconductor device according to claim 19, wherein said pixel electrode exists over said region which is filled with said insulating material made of said resin material.22. A semiconductor device according to claim 19, wherein said semiconductor device is a liquid crystal display device.23. A semiconductor device according to claim 19, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.24. A semiconductor device comprising:a thin film transistor formed on an insulator, said thin film transistor comprising at least a source region, a drain region, a channel forming region, and a gate electrode with a gate insulating film interposed therebetween; a pixel comprising a pixel electrode connected with said source or said drain region and comprising a storage capacitor; and a spacer, wherein said storage capacitor comprises a shielding film provided over said thin film transistor with an insulating film interposed therebetween, an oxide of said shielding film covering said shielding film, and said pixel electrode provided in contact with said oxide, wherein said oxide has a region which is filled with an insulating material comprising a resin material, and wherein said spacer is formed over a contact portion where said thin film transistor and said pixel electrode are connected with each other. 25. A semiconductor device according to claim 24, wherein said shielding film comprises a material which contains mainly aluminum.26. A semiconductor device according to claim 24, wherein said pixel electrode exists over said region which is filled with said insulating material made of said resin material.27. A semiconductor device according to claim 24, wherein said semiconductor device is a liquid crystal display device.28. A semiconductor device according to claim 24, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.29. A semiconductor device comprising:a pixel thin film transistor formed on an insulator, said pixel thin film transistor comprising a source region, a drain region, a channel forming region, and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; and a storage capacitor comprising a first conductive film, an insulating layer in contact with said first conductive film, and a second conductive film in contact with said insulating layer and electrically connected to said source or said drain region, wherein said insulating layer has a hole filled with a material comprising a resin. 30. A semiconductor device according to claim 29, wherein said first conductive film comprises aluminum.31. A semiconductor device according to claim 29, wherein said resin comprises polyimide or acrylic resin.32. A semiconductor device according to claim 29, wherein said semiconductor device is a liquid crystal display device.33. A semiconductor device according to claim 29, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.34. A semiconductor device comprising:a pixel thin film transistor formed on an insulator, said pixel thin film transistor comprising a source region, a drain region, a channel forming region, and a gate electrode adjacent to said channel forming region with a gate insulating film interposed therebetween; and a storage capacitor comprising a first conductive film, an oxide of said first conductive film covering said first conductive film, and a second conductive film in contact with said oxide and electrically connected to said source or said drain region, wherein said oxide has a region filled with a material comprising a resin. 35. A semiconductor device according to claim 34, wherein said first conductive film comprises aluminum.36. A semiconductor device according to claim 34, wherein said resin comprises polyimide or acrylic resin.37. A semiconductor device according to claim 34, wherein said semiconductor device is a liquid crystal display device.38. A semiconductor device according to claim 34, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.39. A semiconductor device comprising:a thin film transistor over a first substrate; a pixel electrode electrically connected to said thin film transistor in a contact hole; and a spacer on said contact hole, said spacer having at least an upper surface, and a side surface; and a second substrate opposed to said first substrate, wherein said upper surface faces a surface of said second substrate. 40. A semiconductor device according to claim 39, wherein said spacer comprises a resin material.41. A semiconductor device according to claim 39, wherein said semiconductor device is a liquid crystal display device.42. A semiconductor device according to claim 39, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.43. A semiconductor device comprising:a thin film transistor over a substrate; a pixel electrode electrically connected to said thin film transistor in a contact hole; and a spacer on said contact hole, wherein said contact hole is filled with said spacer. 44. A semiconductor device according to claim 43, wherein said spacer comprises a resin material.45. A semiconductor device according to claim 43, wherein said semiconductor device is a liquid crystal display device.46. A semiconductor device according to claim 43, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a personal computer, an electronic game machine, and a digital camera.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.