초록 ▼

To form a polycrystalline silicon film having a grain size of 1 μm or greater by means of laser annealing. A beam emitted from a laser apparatus (101) is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses (102) to (105), and (207), then simultaneous

To form a polycrystalline silicon film having a grain size of 1 μm or greater by means of laser annealing. A beam emitted from a laser apparatus (101) is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses (102) to (105), and (207), then simultaneously irradiate an irradiation surface (209). If an amorphous silicon film formed on a glass substrate is disposed on the irradiation surface (209), an area will be irradiated by both a linear shape beam entering from a front surface and a linear shape beam that has transmitted through the glass surface. Both linear shape beams irradiate the same area to thereby crystallize the amorphous silicon film.

대표청구항 ▼

1. A method of manufacturing a semiconductor device having a TFT formed over a substrate, comprising the steps of:forming a non-single crystal semiconductor film over said substrate, andemitting a laser beam from a laser oscillator;splitting the laser beam into a first laser beam and a second laser

1. A method of manufacturing a semiconductor device having a TFT formed over a substrate, comprising the steps of:forming a non-single crystal semiconductor film over said substrate, andemitting a laser beam from a laser oscillator;splitting the laser beam into a first laser beam and a second laser beam; andirradiating said non-single crystal semiconductor film with said first laser beam from a front surface of said substrate and with said second laser beam from a back surface of said substrate to thereby form a crystalline semiconductor film.2. A method according to claim 1, wherein an energy of said first laser beam is higher than an energy of said second laser beam.3. A method according to claim 1, wherein a half mirror is used in the step of splitting the laser beam.4. A method according to claim 1, wherein said semiconductor device is at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a digital camera, a portable telephone, and a projector.5. A method of manufacturing a semiconductor device having a TFT formed over a substrate, comprising the steps of:forming a non-single crystal semiconductor film over said substrate;coating a metal element for promoting a crystallization of a semiconductor over said non-single crystal semiconductor film; andemitting a laser beam from a laser oscillator;splitting the laser beam into a first laser beam and a second laser beam; andirradiating said non-single crystal semiconductor film with said first laser beam from a front surface of said substrate and with said second laser beam from a back surface of said substrate to thereby form a crystalline semiconductor film.6. A method according to claim 5, wherein an energy of said first laser beam is higher than an energy of said second laser beam.7. A method according to claim 5, wherein a half mirror is used in the step of splitting the laser beam.8. A method according to claim 5, wherein said semiconductor device is at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a digital camera, a portable telephone, and a projector.9. A method of manufacturing as semiconductor device having a TFT formed over a substrate, comprising the steps of:forming a non-single crystal semiconductor film over said substrate;coating a metal element for promoting a crystallization of a semiconductor over said non-single crystal semiconductor film;performing a heat treatment to said non-single crystal semiconductor film to thereby form a crystalline semiconductor film;emitting a laser beam from a laser oscillator;splitting the laser beam into a first laser beam and a second laser beam; andirradiating said crystalline semiconductor film with said first laser beam from a front surface of said substrate and with said second laser beam from a back surface of said substrate.10. A method according to claim 9, wherein an energy of said first laser beam is higher than an energy of said second laser beam.11. A method according to claim 9, wherein a half mirror is used in the step of splitting the laser beam.12. A method according to claim 9, wherein said semiconductor device is at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a digital camera, a portable telephone, and a projector.13. A method of manufacturing a semiconductor device comprising the steps of:forming a non-single crystal semiconductor film over a substrate;emitting a laser beam from a laser oscillator;splitting the laser beam into a first laser beam and a second laser beam, wherein each of said first laser beam and said second laser beam is elongated in one direction on an irradiation surface; andirradiating said non-single crystal semiconductor film with said first laser beam from a front surface of said substrate and with said second laser beam from a back surface of said substrate by relatively moving said substrate in a direction perpendicular to said one direction.14. A method according to claim 13, wherein an energy of said first laser beam irradiated from the front surface is higher than an energy of said second laser beam irradiated from the back surface.15. A method according to claim 13, wherein a ratio of an energy of said first laser beam irradiated from the front surface and an energy of said second laser beam irradiated from the back surface is between 1 to 1 and 10 to 1.16. A method according to claim 13, wherein said substrate is arranged in a direction parallel to a direction of gravity when said first laser beam and said second laser beam are being irradiated.17. A method according to claim 13, wherein said substrate is disposed into an atmosphere that has a pressure of between an atmospheric pressure and 10?3 Pa.18. A method according to claim 13, wherein said substrate is disposed into an atmosphere formed of gases such as Ar, H2, N2, He, or a gaseous mixture.19. A method according to claim 13, wherein at least the irradiation region of said first laser beam and the irradiation region of said second laser beam in said substrate are heated between 10° C. and 500° C.20. A method according to claim 13, wherein said first laser beam and said second laser beam are excimer lasers.21. A method according to claim 13, wherein said first laser beam and said second laser beam are XeCl excimer laser beams.22. A method according to claim 13, wherein a half mirror is used in the step of splitting the laser beam.23. A method according to claim 13, wherein said semiconductor device is at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a digital camera, a portable telephone, and a projector.24. A method of manufacturing a semiconductor device comprising the steps of:forming a non-single crystal semiconductor film over a substrate;emitting a laser beam from a laser oscillator;splitting the laser beam into a first laser beam and a second laser beam wherein each of said first laser beam and said second laser beam is elongated in one direction on an irradiation surface; andirradiating said non-single crystal semiconductor film with said first laser beam from a front surface of said substrate and with said second laser beam from a back surface of said substrate by relatively moving said substrate in a direction perpendicular to said one direction,wherein a width of the first laser beam on the irradiation surface is smaller than a width of the second laser beam on the irradiation surface.25. A method according to claim 24, wherein an energy of said first laser beam irradiated from the front surface is higher than an energy of said second laser beam irradiated from the back surface.26. A method according to claim 24, wherein a ratio of an energy of said first laser beam irradiated from the front surface and an energy of said second laser beam irradiated from the back surface is between 1 to 1 and 10 to 1.27. A method according to claim 24, wherein said substrate is arranged in a direction parallel to a direction of gravity when said first laser beam and said second laser beam are being irradiated.28. A method according to claim 24, wherein said substrate is disposed into an atmosphere that has a pressure of between an atmospheric pressure and 10?3 Pa.29. A method according to claim 24, wherein said substrate is disposed into an atmosphere formed of gases such as Ar, H2, N2, He, or a gaseous mixture.30. A method according to claim 24, wherein at least the irradiation region of said first laser beam and the irradiation region of said second laser beam in said substrate are heated between 10° C. and 500° C.31. A method according to claim 24, wherein said first laser beam and said second laser beam are excimer laser beams.32. A method according to claim 24, wherein said first laser beam and said second laser beam are XeCl excimer laser beams.33. A method according to claim 24, wherein a half mirror is used in the step of splitting the laser beam.34. A method according to claim 24, wherein said semiconductor device is at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player that uses a recording medium, a digital camera, a portable telephone, and a projector.