IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
|
출원번호 |
US-0249770
(2003-05-06)
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§371/§102 date |
20020514
(20020514)
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발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
7 |
초록
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A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C?SiC, and hexagonal SiC, wherein the quantum dots are sandwiched betw
A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C?SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C?SiC, 4H?SiC, 6H?SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C?SiC, 4H?SiC, 6H?SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.
대표청구항
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1. A double heterojunction light emitting device, comprising:an n-type semiconductor cladding layer selected from a group consisting of 3C?SiC, 4H?SiC, 6H?SiC and diamond; said n-type cladding layer having an outer surface and having a first generally flat surface; a plurality of quantum dots formed
1. A double heterojunction light emitting device, comprising:an n-type semiconductor cladding layer selected from a group consisting of 3C?SiC, 4H?SiC, 6H?SiC and diamond; said n-type cladding layer having an outer surface and having a first generally flat surface; a plurality of quantum dots formed of one or more indirect band gap materials selected from a group consisting of Ge, SiGe, SiGeC, 3C?SiC, and hexagonal SiC on said first generally flat surface; each of said quantum dots having a thickness measured generally perpendicular to said first generally flat surface that is no greater than about 250 Angstroms; said plurality of quantum dots defining a second generally flat surface that is spaced from and generally parallel to said first generally flat surface; a p-type semiconductor cladding layer selected from a group consisting of 3C?SiC, 4H?SiC, 6H?SiC and diamond; said p-type cladding layer having an outer surface and having a third generally flat surface that is direct-wafer-bonded to said second generally flat surface; a first metal contact on said outer surface of said n-type cladding layer; and a second metal contact on said outer surface of said p-type cladding layer. 2. The light emitter of claim 1 wherein said wherein said n-type and p-type semiconductor cladding layers are wide band gap materials and the one or more indirect band gap materials is a narrow band gap material, whereby the band gap energy of the n-type and p-type semiconductor cladding layers is greater than the band gap energy of the one or more indirect band gap materials.3. The light emitter of claim 1 wherein said plurality of quantum dots form an ordered array of quantum dots, each quantum dot having a dimension measured parallel to said second generally flat surface that is no greater than about 200 Angstroms, and said plurality of quantum dots having a center-to-center spacing in a range of from about 10 Angstroms to about 1000 Angstroms.4. The light emitter of claim 1 wherein at least one of said n-type and p-type cladding layers is 3C?SiC, and wherein said quantum dots are doped or undoped.5. The light emitter of claim 1 wherein at least one of said n-type and p-type cladding layers is 4H?SiC.6. The light emitter of claim 1 wherein at least one of said n-type and p-type cladding layers is 6H?SiC.7. The light emitter of claim 1 wherein at least one of said n-type and p-type cladding layers is diamond and wherein said quantum dots are doped or undoped.8. The light emitter of claim 1 wherein said one or more indirect band gap materials comprises germanium.9. The light emitter of claim 8 wherein said one or more indirect band gap materials comprises 3C?SiC.10. The light emitter of claim 1 wherein said one or more indirect band gap materials comprises hexagonal SiC.11. The light emitter of claim 1 wherein said one or more indirect band gap materials comprises SiGe.12. The light emitter of claim 1 wherein said one or more indirect band gap materials comprises SiGeC.13. The light emitter of claim 1 wherein said one or more indirect band gap materials comprises elemental germanium.14. A double heterojunction light emitting semiconductor device comprising:a first layer having a first-doping; said first layer having an outer surface and a generally flat surface; a light-emitting semiconductor layer having a thickness that is no greater than about 250 Angstroms, having a first surface, and having a second surface; said light-emitting semiconductor layer being formed of one or more indirect band gap materials and said light-emitting semiconductor layer having a plurality of quantum dots therein; said first surface of said light-emitting semiconductor layer physically engaging said generally flat surface of said first layer; a second layer having a second-doping; said second layer having an outer surface and having a generally flat surface; a first metal contact on said outer surface of said first layer; and a second metal contact on said outer surface of said second layer, wherein at least one of the following statements is true: (i) the first layer is selected from a group consisting of 3C?SiC. 4H?SiC, 6H?SiC and diamond; (ii) the second layer is selected from a group consisting of 3C?SiC. 4H?SiC, 6H?SiC and diamond; and (iii) the one or more indirect band gap materials is selected from a group consisting of Ge, SiGe, SiGeC, 3C?SiC, and hexagonal SiC. 15. The double heterojunction light emitting semiconductor device of claim 14 wherein said plurality of quantum dots form an ordered array of quantum dots, each quantum dot having a dimension measured parallel to said second generally flat surface that is no greater than about 200 Angstroms, and said plurality of quantum dots having a center-to-center spacing in a range of from about 10 Angstroms to about 1000 Angstroms and wherein statement (i) is true.16. The double heterojunction light emitting semiconductor device of claim 14 wherein statement (ii) is true and wherein said first and second layers are wide band gap materials and the one or more indirect band gap materials is a narrow band gap material, whereby the band gap energy of the first and second layers is greater than the band gap energy of the one or more indirect band gap materials.17. The double heterojunction light emitting semiconductor device of claim 14 wherein wherein statement (iii) is true.18. A double heterojunction light emitting device, comprising:an n-type semiconductor cladding layer; the n-type cladding layer having an outer surface and having a first generally flat surface; a plurality of discrete quantum dots formed of one or more narrow band gap materials on the first generally flat surface; each of the quantum dots having a thickness measured generally perpendicular to the first generally flat surface; the plurality of quantum dots defining a second generally flat surface that is spaced from and generally parallel to the first generally flat surface; a p-type semiconductor cladding layer; the p-type cladding layer having an outer surface and having a third generally flat surface in contact with the second generally flat surface; a first metal contact on the outer surface of the n-type cladding layer; and a second metal contact on the outer surface of the p-type cladding layer, wherein the n-type and p-type semiconductor cladding layers are each wide band gap materials and the material forming the quantum dots has a smaller band gap energy than the n-type and p-type semiconductor cladding layers and wherein at least one of the following statements is true: (i) the n-type semiconductor cladding layer is selected from a group consisting of 3C?SiC, 4H?SiC, 6H?SiC and diamond; (ii) the p-type semiconductor cladding layer is selected from a group consisting of 3C?SiC, 4H?SiC, 6H?SiC and diamond; and (ii) the one or more indirect band gap materials is selected from a group consisting of Ge, SiGe, SiGeC, 3C?SiC, and hexagonal SiC. 19. The device of claim 18, wherein the wide band gap materials in the n-type and p-type semiconductor cladding layers each have a band gap energy ranging from about 2.5 to about 3.2 eV and an index of refraction that is smaller than that of the one or more narrow band gap materials forming the quantum dots.20. The device of claim 18, wherein the plurality of quantum dots form an ordered array, each of the quantum dots having a thickness that is no greater than about 250 Angstroms and a width that is no greater than about 200 Angstroms, and adjacent quantum dots have a center-to-center spacing ranging from about 10 Angstroms to about 1000 Angstroms.21. The device of claim 18, wherein statement (i) is true.22. The device of claim 18, wherein statement (ii) is true.23. The device of claim 18, wherein at least one of statements (i) and (ii) is true and at least one of the p-type and n-type semiconductor cladding layers comprises 3C?SiC.24. The device of claim 18, wherein at least one of statements (i) and (ii) is true and at least one of the p-type and n-type semiconductor cladding layers comprises 4H?SiC.25. The device of claim 18, wherein at least one of statements (i) and (ii) is true and at least one of the p-type and n-type semiconductor cladding layers comprises 6H?SiC.26. The device of claim 18, wherein at least one of statements (i) and (ii) is true and at least one of the p-type and n-type semiconductor cladding layers comprises diamond.27. The device of claim 18, wherein statement (iii) is true.28. The device of claim 27, wherein the one or more narrow band gap materials comprises Ge.29. The device of claim 27, wherein the one or more narrow band gap materials comprises SiGe.30. The device of claim 27, wherein the one or more narrow band gap materials comprises SiGeC.31. The device of claim 27, wherein the one or more narrow band gap materials comprises 3C?SiC.32. The device of claim 27, wherein the one or more narrow band gap materials comprises hexagonal SiC.
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