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Light emitting diode having an insulating substrate

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
  • H01L-029/12
출원번호 US-0063822 (2002-05-16)
우선권정보 TW-0113284 (2001-05-30)
발명자 / 주소
  • Sung, Shu-Wen
  • Ku, Chin-Fu
  • Liu, Chia-Cheng
  • Hsieh, Min-Hsun
  • Huang, Chao-Nien
  • Ou, Chen
  • Chang, Chuan-Ming
출원인 / 주소
  • Epistar Corporation
인용정보 피인용 횟수 : 31  인용 특허 : 7

초록

An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact laye

대표청구항

1. A light emitting diode comprising:an insulating substrate; a semiconductor stack positioned over the insulating substrate, the semiconductor stack comprising a first surface and a second surface, a distance between the first surface and the insulating substrate is greater than a distance between

이 특허에 인용된 특허 (7)

  1. Sugawara Hideto,JPX ; Ishikawa Masayuki,JPX, GaN based optoelectronic device and method for manufacturing the same.
  2. Ming-Jiunn Jou,TWX ; Biing-Jye Lee,TWX ; Tarn Jacob C.,TWX ; Chuan-Ming Chang,TWX ; Chia-Cheng Liu,TWX, Indium gallium nitride light emitting diode.
  3. Koike Masayoshi,JPX ; Asami Shinya,JPX, Light-emitting semiconductor device using group III nitride compound.
  4. Saito Shinji,JPX ; Hatakoshi Genichi,JPX ; Onomura Masaaki,JPX ; Fujimoto Hidetoshi,JPX ; Iizuka Norio,JPX ; Nozaki Chiharu,JPX ; Nishio Johji,JPX ; Ishikawa Masayuki,JPX, Nitride semiconductor light emitting device and its manufacturing method.
  5. Rennie John,JPX ; Hatakoshi Genichi,JPX, Semiconductor device.
  6. Nitta Koichi,JPX, Semiconductor device and method of manufacturing the same.
  7. Watanabe Yukio,JPX ; Saeki Ryo,JPX ; Nozaki Hideki,JPX, Semiconductor light-emitting element having transparent electrode and current blocking layer, and semiconductor light-emitting including the same.

이 특허를 인용한 특허 (31)

  1. Kim, Seong Jae, Gallium nitride based light emitting diode.
  2. Kim, Seong Jae, Gallium nitride based light emitting diode.
  3. Kim, Seong Jae, Gallium nitride based light emitting diode.
  4. Kim, Seong Jae, Gallium nitride based light emitting diode and fabrication method thereof.
  5. Kasahara, Kenji; Ueda, Kazumasa; Ono, Yoshinobu, Group III nitride semiconductor light emitting device and method for producing the same.
  6. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., LED system and method.
  7. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M., LED system and method.
  8. Kim, Seong Jae, Light emitting diode and fabrication method thereof.
  9. Kim, Seong Jae, Light emitting diode having a first GaN layer and a first semiconductor layer each having a predetermined thickness and fabrication method therof.
  10. Hsieh, Yen-Chang, Light-emitting diode device.
  11. Fang, Kuo-Lung; Weng, Chien-Sen; Chao, Chih-Wei, Method for fabricating LED chip comprising reduced mask count and lift-off processing.
  12. Fang, Kuo-Lung; Weng, Chien-Sen; Chao, Chih-Wei, Method for fabricating LED chip comprising reduced mask count and lift-off processing.
  13. Fang, Kuo-Lung; Weng, Chien-Sen; Chao, Chih-Wei, Method for fabricating LED chip comprising reduced mask count and lift-off processing.
  14. Fang, Kuo-Lung; Weng, Chien-Sen; Chao, Chih-Wei, Method for fabricating LED chip comprising reduced mask count and lift-off processing.
  15. Fang, Kuo-Lung; Weng, Chien-Sen; Chao, Chih-Wei, Method for fabricating LED chip comprising reduced mask count and lift-off processing.
  16. Fang, Kuo-Lung; Weng, Chien-Sen; Chao, Chih-Wei, Method for fabricating lED chip comprising reduced mask count.
  17. Boyama, Shinya; Ushida, Yasuhisa, Method for producing a group III nitride semiconductor light-emitting device.
  18. Lee, Suk Hun, Nitride semiconductor LED and fabrication method thereof.
  19. Narukawa, Yukio; Mitani, Tomotsugu; Ichikawa, Masatsugu; Kitano, Akira; Misaki, Takao, Nitride semiconductor element having a silicon substrate and a current passing region.
  20. Lee, Suk Hun, Nitride semiconductor light emitting device and fabrication method thereof.
  21. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  22. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  23. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  24. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R., Separate optical device for directing light from an LED.
  25. Lai,Mu Jen; Hon,Schang Jing; Sun,Hsueh Feng; Yang,Shih Ming, Structure and manufacturing of gallium nitride light emitting diode.
  26. Ko, Hyunchul; Johnson, Randall E.; Duong, Dung T.; Winberg, Paul N., System and method for a lens and phosphor layer.
  27. Duong, Dung T.; Ko, Hyunchul; Johnson, Randall E.; Winberg, Paul N.; Radkov, Emil, System and method for color mixing lens array.
  28. Duong, Dung T.; Ko, Hyunchul; Johnson, Randall E.; Winberg, Paul N.; Radkov, Emil, System and method for color mixing lens array.
  29. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M.; Khizar, Muhammad, System and method for emitter layer shaping.
  30. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M.; Khizar, Muhammad, System and method for emitter layer shaping.
  31. Duong, Dung T.; Winberg, Paul N.; Vaz, Oscar, Systems and methods for packaging light-emitting diode devices.
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