Light emitting diode having an insulating substrate
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/00
H01L-029/12
출원번호
US-0063822
(2002-05-16)
우선권정보
TW-0113284 (2001-05-30)
발명자
/ 주소
Sung, Shu-Wen
Ku, Chin-Fu
Liu, Chia-Cheng
Hsieh, Min-Hsun
Huang, Chao-Nien
Ou, Chen
Chang, Chuan-Ming
출원인 / 주소
Epistar Corporation
인용정보
피인용 횟수 :
31인용 특허 :
7
초록▼
An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact laye
An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.
대표청구항▼
1. A light emitting diode comprising:an insulating substrate; a semiconductor stack positioned over the insulating substrate, the semiconductor stack comprising a first surface and a second surface, a distance between the first surface and the insulating substrate is greater than a distance between
1. A light emitting diode comprising:an insulating substrate; a semiconductor stack positioned over the insulating substrate, the semiconductor stack comprising a first surface and a second surface, a distance between the first surface and the insulating substrate is greater than a distance between the second surface and the insulating substrate; a reverse-tunneling layer over the first surface, the reverse-tunneling layer being a gallium nitride (GaN) based semiconductor; a first transparent ohmic contact electrode positioned directly on the reverse-tunneling layer, the first transparent ohmic contact electrode comprising an oxide; and a second transparent ohmic contact electrode positioned over the second surface. 2. The light emitting diode of claim 1, wherein the insulating substrate comprises sapphire, and the first transparent ohmic contact electrode and the second transparent ohmic contact electrode comprise the same non-metal material.3. The light emitting diode of claim 1, wherein the first transparent ohmic contact electrode or the second transparent ohmic contact electrode comprises at least one selected from a group comprising indium tin oxide (ITO) and cadmium tin oxide (CTO).4. A light emitting diode comprising:an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer comprising a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer; wherein the p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode comprise the same materials. 5. The light emitting diode of claim 4, wherein the insulating substrate comprises sapphire.6. The light emitting diode of claim 4, wherein the p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of at least one selected from a group comprising indium tin oxide and cadmium tin oxide.7. A light emitting diode comprising:an insulating substrate; a semiconductor light emitting stack positioned over the insulating substrate, the semiconductor light emitting stack comprising a first surface and a second surface, a distance between the first surface and the insulating substrate is greater than a distance between the second surface and the insulating substrate; a reverse-tunneling layer over the first surface, the reverse-tunneling layer being a gallium nitride (GaN) based semiconductor; a first non-metal transparent ohmic contact electrode positioned over the reverse-tunneling layer; and a second non-metal transparent ohmic contact electrode positioned over the second surface, wherein the first non-metal transparent ohmic contact electrode and the second non-metal transparent ohmic contact electrode comprise the same oxide material. 8. The light emitting diode of claim 7, wherein the first non-metal transparent ohmic contact electrode and the second non-metal transparent ohmic contact electrode comprise at least one selected from a group comprising indium tin oxide (ITO) and cadmium tin oxide (CTO).9. A light emitting diode comprising:an insulating substrate; a semiconductor stack positioned over the insulating substrate, the semiconductor stack comprising a first surface and a second surface, a distance between the first surface and the insulating substrate is greater than a distance between the second surface and the insulating substrate; a reverse-tunneling layer, which is a gallium nitride (GaN) based semiconductor that has a carrier concentration of approximately 1.5×1020 cm?3, over the first surface; a first transparent ohmic contact electrode directly on the reverse-tunneling layer, the first transparent ohmic contact electrode comprising an oxide; and a second transparent ohmic contact electrode over the second surface. 10. The light emitting diode of claim 9, wherein the reverse-tunneling layer has a thickness of approximately 20 angstroms.11. A light emitting diode comprising:an insulating substrate; a semiconductor stack positioned over the insulating substrate, the semiconductor stack comprising a first surface and a second surface, a distance between the first surface and the insulating substrate is greater than a distance between the second surface and the insulating substrate; a reverse-tunneling layer over the first surface, the reverse-tunneling layer being a gallium nitride (GaN) based semiconductor; and a first transparent ohmic contact electrode directly on the reverse-tunneling layer, the first transparent ohmic contact electrode comprising an oxide. 12. A light emitting diode comprising:an insulating substrate; a buffer layer positioned on the insulating substrate; an n-type contact layer positioned on the buffer layer, the contact layer comprising a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer; wherein the p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode comprise the same materials. 13. The light emitting diode of claim 12, wherein the insulating substrate comprises sapphire.14. The light emitting diode of claim 12, wherein the p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of at least one selected from a group comprising indium tin oxide and cadmium tin oxide.
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