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Semiconductor device structure

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/06
  • H01L-031/0328
  • H01L-031/0336
  • H01L-031/072
  • H01L-029/04
출원번호 US-0116559 (2002-04-04)
발명자 / 주소
  • Cheng, Zhiyuan
  • Fitzgerald, Eugene A.
  • Antoniadis, Dimitri A.
출원인 / 주소
  • Massachusetts Institute of Technology
대리인 / 주소
    Testa Hurwitz &
인용정보 피인용 횟수 : 29  인용 특허 : 197

초록

A method of fabricating a semiconductor structure. According to one aspect of the invention, on a first semiconductor substrate, a first compositionally graded Si1-xGex buffer is deposited where the Ge composition x is increasing from about zero to a value less than about 20%. Then a first etch-stop

대표청구항

1. A semiconductor structure that includes a monocrystalline semiconductor substrate, said semiconductor structure comprising:a first compositionally graded Si1-xGex buffer where x increases from about zero to a value less than about 0.2; a uniform Si1-yGey layer where y is larger than about 0.2; an

이 특허에 인용된 특허 (197)

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  5. Bhattacharyya, Arup; Forbes, Leonard; Farrar, Paul A, Implantation processes for straining transistor channels of semiconductor device structures and semiconductor devices with strained transistor channels.
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  12. Bhattacharyya, Arup; Forbes, Leonard; Farrar, Paul A., Methods for stressing transistor channels of a semiconductor device structure.
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  15. Currie, Matthew T.; Lochtefeld, Anthony J.; Leitz, Christopher W.; Fitzgerald, Eugene A., Methods of fabricating semiconductor devices having strained dual channel layers.
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  29. Bedell,Stephen W.; Fogel,Keith E.; Sadana,Devendra K., Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion.

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