Recombination device and method for catalytically recombining hydrogen and/or carbon monoxide with oxygen in a gaseous mixture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C01B-005/00
C01B-031/20
B01J-035/02
출원번호
US-0937668
(2000-03-15)
우선권정보
DE-0014814 (1999-03-31)
국제출원번호
PCT//DE00/00798
(2001-09-28)
§371/§102 date
20010928
(20010928)
국제공개번호
WO00//60608
(2000-10-12)
발명자
/ 주소
Eckardt, Bernd
Hill, Axel
출원인 / 주소
Framatome ANP GmbH
대리인 / 주소
Venable LLP
인용정보
피인용 횟수 :
3인용 특허 :
34
초록▼
A recombination device (1, 1′) for catalytically recombining hydrogen and/or carbon monoxide with oxygen in a gaseous mixture comprises at least one catalyst system (2) in which a housing (4) is mounted through which the gaseous mixture can flow in free convection in the operational phase. According
A recombination device (1, 1′) for catalytically recombining hydrogen and/or carbon monoxide with oxygen in a gaseous mixture comprises at least one catalyst system (2) in which a housing (4) is mounted through which the gaseous mixture can flow in free convection in the operational phase. According to the invention, said catalyst system (2) is provided with a plurality of sub-areas (T1, T2) in the direction of flow. A first sub-area (T1) comprises in the incoming direction a catalyst body (6) with a surrounding throttle layer (8) for inhibiting the diffusion of the incoming and/or discharged reaction gases. A second sub-area (T2) that adjoins the first sub-area (T1) comprises at least one catalyst body (6) that is directly accessible by the reaction gases.
대표청구항▼
1. A recombination device for catalytic recombination of reaction gases in the form of hydrogen and/or carbon monoxide with oxygen in a gaseous mixture, comprising:a housing through which the gaseous mixture flows; andat least one catalyst system having a first sub region and a second sub region loc
1. A recombination device for catalytic recombination of reaction gases in the form of hydrogen and/or carbon monoxide with oxygen in a gaseous mixture, comprising:a housing through which the gaseous mixture flows; andat least one catalyst system having a first sub region and a second sub region located within said housing;said first sub region including:a first catalyst body positioned within said housing to receive said gaseous mixture; anda retarding layer surrounding said first catalyst body, said retarding layer inhibiting diffusion of the reaction gases; andsaid second sub region including:a second catalyst body positioned in the flow direction after said first catalyst body, the reaction gases having direct access to said second catalyst body.2. The recombination device according to claim 1, wherein said second catalyst body has a higher catalytic activity than said first catalyst body.3. The recombination device according to claim 1, wherein the second catalyst body comprises a plate-shaped sheet metal carrier coated with a catalyst material.4. The recombination device according to claim 3, wherein the catalyst material contains a catalytically active precious metal.5. The recombination device according to claim 4, wherein the precious metal is selected from the group consisting of platinum and palladium.6. The recombination device according to claim 1, wherein said retarding layer is a porous layer of a bulk material.7. The recombination device according to claim 1, wherein said retarding layer is deposited as a porous cover layer onto the first catalyst body.8. The recombination device according to claim 1, wherein a plurality of identical catalyst systems are positioned parallel to each other.9. The recombination device according to claim 8, wherein the catalyst systems are plate-shaped and positioned less than 20 mm apart, and wherein each catalyst system has a total maximum thickness of 1 cm.10. The recombination device according to claim 9, wherein the thickness of each catalyst system is 0.3 mm.11. The recombination device according to claim 1, further comprising an up-current protection device receiving the gaseous mixture before said mixture impinges on said catalyst system, said up-current protection device ensuring a homogeneous recombination.12. The recombination device according to claim 1, further comprising a down-current protection device positioned after the gaseous mixture traverses said catalyst system, said down-current protection device protecting against a change in flow direction inside the recombination device.13. The device according to claim 1, further comprising a teflon coating surrounding the retarding layer, said teflon coating preventing adsorption of water generated by the reaction gases within the retarding layer.14. A method for catalytically recombining reaction gases in the form of hydrogen and/or carbon monoxide with oxygen in a gaseous mixture, comprising the steps of:flowing the gaseous mixture through at least one catalyst system including a first sub region and a second sub region in the flow direction of the gaseous mixture, said first sub region having a first catalyst body and a retarding layer surrounding said first catalyst body, and said second sub region having a second catalyst body;in said first sub region, catalytically recombining the reaction gases on the first catalyst body, inhibiting diffusion of said gases, and limiting catalytic recombination of said gases to produce a gaseous mixture with a reaction concentration below the ignition concentration;flowing said gaseous mixture having a reaction concentration below the ignition concentration into the following second sub region; andin said second sub region, catalytically recombining the reaction gases on the second catalyst body, said second catalyst body being directly accessible to the gaseous mixture.15. The method according to claim 14, further comprising the step of reducing the hydrogen content of the gaseous mixture in the first sub region through oxidation to less than 5% by volume.16. The method according to claim 14, further comprising the step of guiding the gaseous mixture through the retarding layer.17. The method according to claim 14, further comprising the step of guiding the entire gaseous mixture along the retarding layer.18. The method according to claim 14, wherein the reaction temperature in the first sub region is lower than the reaction temperature in the second sub region.19. The method according to claim 18, wherein the reaction temperature in the first sub region is lower than 560° C.20. The method according to claim 18, wherein the reaction temperature in the second sub region is higher than 560° C.
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