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There is provided a method of manufacturing a substrate which has a partial insulating layer under a semiconductor layer. After the first substrate (10c) is formed, it is bonded to the second substrate (20), thereby forming a bonded substrate stack (30). Then, the bonded substrate stack (30) is spli

There is provided a method of manufacturing a substrate which has a partial insulating layer under a semiconductor layer. After the first substrate (10c) is formed, it is bonded to the second substrate (20), thereby forming a bonded substrate stack (30). Then, the bonded substrate stack (30) is split at a separation layer (15). In the step of forming the first substrate (10c), a partial insulating layer (12a) is formed on the substrate, a single-crystal Si layer (13) is grown in the partial insulating layer (12a), and a polysilicon layer (14) is grown on the partial insulating layer (12a). After that, ions are implanted into the substrate, thereby forming the separation layer (15) inside the substrate.

대표청구항 ▼

1. A method for manufacturing a partial SOI substrate, the method comprising:a step of forming a first substrate which has a semiconductor region, a partial insulating layer and a semiconductor layer, the semiconductor region including first and second regions, the partial insulating layer being arr

1. A method for manufacturing a partial SOI substrate, the method comprising:a step of forming a first substrate which has a semiconductor region, a partial insulating layer and a semiconductor layer, the semiconductor region including first and second regions, the partial insulating layer being arranged on the first region so as to be in contact with the first region, and the semiconductor layer being arranged on the second region and the partial insulating layer; a step of implanting ions into the first substrate through a surface of the first substrate to form a separation layer at a position deeper than a position of the partial insulating layer; a step of bonding a second substrate to the surface of the first substrate, in which the separation layer is formed, to form a bonded substrate stack; and a step of splitting the bonded substrate stack at the separation layer to form a partial SOI substrate including an SOI layer comprising the first region arranged on the partial insulating layer so as to be in contact with the partial insulating layer. 2. The method according to claim 1, further comprising a step of planarizing the surface of the first substrate before bonding the second substrate to the first substrate.3. The method according to claim 1, wherein in the step of forming the first substrate, a single-crystal semiconductor layer is formed on the second region surrounded by the partial insulating layer, and a non-single-crystal semiconductor layer is formed on the partial insulating layer.4. The method according to claim 1, wherein the semiconductor region comprises a semiconductor layer formed on the substrate by epitaxial growth.5. The method according to claim 1, wherein at least a surface, to be bonded to the first substrate, of the second substrate comprises an insulator.6. The method according to claim 1, further comprising a step of forming a bonding layer to be bonded to the second substrate across the surface of the first substrate.7. The method according to claim 6, further comprising a step of planarizing a surface of the bonding layer after the step of forming the bonding layer and before the step of forming the bonded substrate stack.8. The method according to claim 6, further comprising a step of planarizing the surface of the first substrate after the step of forming the first substrate and before the step of forming the bonding layer.9. The method according to claim 6, wherein in the step of forming the bonding layer, a layer having a substantially uniform structure across a surface of the layer is formed as the bonding layer.10. The method according to claim 6, wherein in the step of forming the bonding layer, a polycrystalline semiconductor layer is formed as the bonding layer.11. The method according to claim 6, wherein in the step of forming the bonding layer, an amorphous semiconductor layer is formed as the bonding layer.12. The method according to claim 6, wherein in the step of forming the bonding layer, an insulating layer is formed as the bonding layer.13. The method according to claim 12, wherein the insulating layer comprises an oxide film.14. The method according to claim 13, wherein in the step of forming the bonding layer, the oxide film is formed by CVD.15. The method according to claim 1, wherein the step of forming the first substrate includes:a first growth step of growing a single-crystal semiconductor layer on the second region surrounded by the partial insulating layer so that no layer is grown on the partial insulating layer, and a second growth step of further growing a single-crystal semiconductor layer on the single-crystal semiconductor layer and growing a non-single-crystal semiconductor layer on the partial insulating layer. 16. The method according to claim 15, wherein in the first growth step, the single-crystal semiconductor layer is grown to have a thickness larger than a thickness of the partial insulating layer.17. The method according to claim 15, wherein in the first growth step, the single-crystal semiconductor layer is grown such that the non-single-crystal semiconductor layer to be formed in the subsequent second growth step fits in a region on the partial insulating layer.18. The method according to claim 1, wherein the ions include hydrogen ions or helium ions.19. A substrate which can be manufactured by a manufacturing method as defined in claim 1.