Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 μm and 300 μm and use of the same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C01B-033/02
B22D-011/01
B22F-009/00
B28B-001/54
B29B-009/00
출원번호
US-0433257
(2001-11-06)
우선권정보
DE-0059594 (2000-11-30)
국제출원번호
PCT//EP01/12804
(2003-05-29)
§371/§102 date
20030529
(20030529)
국제공개번호
WO02//46097
(2002-06-13)
발명자
/ 주소
Block, Hans-Dieter
Kr?uter, Udo
Schreckenberg, Peter
출원인 / 주소
SolarWorld Aktiengesellschaft
대리인 / 주소
McGlew and Tuttle, P.C.
인용정보
피인용 횟수 :
2인용 특허 :
18
초록▼
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 μm can be produced by means of said method and device and can be used to separate high-purity sil
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 μm can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.
대표청구항▼
1. A device for producing globular grains of high-purity silicon by atomizing a silicon melt in an ultrasonic field inside a pressurized vessel filled with inert gas, said device comprising:said vessel containing a heated melting pot for melting said silicon and a set of sonotrodes for producing a s
1. A device for producing globular grains of high-purity silicon by atomizing a silicon melt in an ultrasonic field inside a pressurized vessel filled with inert gas, said device comprising:said vessel containing a heated melting pot for melting said silicon and a set of sonotrodes for producing a sonic field, wherein the melt is fed into said ultrasonic field through a capillary tube, that the heated portion said capillary tube is heat-insulated from said ultrasonic field by a heat shield, and all surfaces which might come into contact with the globular grains in said pressurized vessel comprise at least one of a non-contaminating material, a coating with a liner made of a non-contaminating material and a coating with a non-contaminating material. 2. A device according to claim 1, wherein said ultrasonic field is generated by at least two sonotrodes being arranged at a minimum distance of nine field nodes between each other.3. A device according to claim 1, wherein said capillary tube has a maximum distance of 50 mm from one field node of said ultrasonic field.4. A device according to claim 1, wherein said capillary tube is provided with an additional heating means.5. A device according to claim 1, wherein the distance from a set of walls of said pressurized vessel to an atomisation zone for atomizing said silicon melt is chosen so that the globular grains are completely solidified before the globular grains hit said walls.6. A device according to claim 1, wherein at least one of graphite, silicon carbide and quartz glass are used as said non-contaminating material.7. A device according to claim 1, wherein the silicon is fed into said heated melting pot via a solid matter valve.8. A device according to claim 1, wherein the bottom of said pressurized vessel is provided with a discharge means for discharging the high-purity silicon.9. A device according to claim 8, wherein a cellular wheel sluice is provided as said discharge means.10. A device for producing globular grains of high-purity silicon by atomizing a silicon melt in an ultrasonic field inside a pressurized vessel filled with inert gas, comprising:said vessel containing a heated melting pot for melting said silicon and at least two sonotrodes for producing the ultrasonic field; a capillary tube connected to said heated melting pot for feeding the melt into said ultrasonic field, wherein the ultrasonic field is generated by said sonotrodes being arranged at a minimum distance of nine field nodes between each other; a heat shield adjacent said capillary tube, said heat shield insulating said capillary tube from the ultrasonic field; and all surfaces in said pressurized vessel coming in contact with the globular grains comprise at least one of a non-contaminating material, a coating with a liner made of a non-contaminating material and a coating with a non-contaminating material. 11. A device according to claim 10, wherein said capillary tube has a maximum distance of 50 mm from one field node of said ultrasonic field.12. A device according to claim 10, wherein said capillary tube is provided with a heating means.13. A device according to claim 10, wherein the distance from the walls of said pressurized vessel to an atomization zone for atomizing said silicon melt is chosen so that the globular grains are completely solidified before the globular grains hit said walls.14. A device according to claim 10, wherein at least one of graphite, silicon carbide and quartz glass are used as said non-contaminating material.15. A device according to claim 10, wherein the silicon is fed into said heated melting pot via a solid matter valve.16. A device according to claim 10, wherein the bottom of said pressurized vessel is provided with a discharge means for discharging the high-purity silicon.17. A device according to claim 16, wherein a cellular wheel sluice is provided as said discharge means.18. A device for producing globular grains of high-purity silicon by atomizing a silicon melt in a sonic field inside a pressurized vessel filled with inert gas, comprising:said pressurized vessel; a heated melting pot inside said pressurized vessel for melting a silicon material into the silicon melt; a capillary tube providing a continuous path from said heated melting pot for the silicon melt; a set of sonotrodes for producing the ultrasonic field underneath a bottom of said capillary tube, wherein said capillary tube feeds the silicon melt into said ultrasonic field, and said capillary tube has a maximum distance of 50 mm from one field node of said sonic field; a heat shield adjacent said bottom to insulate said capillary tube from said ultrasonic field; and all surfaces in said pressurized vessel coming in contact with the globular grains comprise at least one of a non-contaminating material, a coating with a liner made of a non-contaminating material and a coating with a non-contaminating material. 19. A device according to claim 18, wherein said ultrasonic field is generated by at least two sonotrodes being arranged at a minimum distance of nine field nodes between each other.20. A device according to claim 18, wherein said capillary tube is provided with heating means.21. A device according to claim 18, wherein the distance from the walls of said pressurized vessel to an atomisation zone for atomizing said silicon melt is chosen so that the globular grains are completely solidified before the globular grains hit said walls.22. A device according to claim 18, wherein at least one of graphite, silicon carbide and quartz glass are used as said non-contaminating material.23. A device according to claim 18, wherein the silicon is fed into said heated melting pot via a solid matter valve.24. A device according to claim 18, wherein the bottom of said pressurized vessel is provided with a discharge means for discharging the high-purity silicon.25. A device according to claim 24, wherein a cellular wheel sluice is provided as said discharge means.26. A device for producing globular grains of high-purity silicon by atomizing a silicon melt in an ultrasonic field inside a pressurized vessel filled with inert gas, the device comprising:said vessel; a heated melting pot inside said vessel for melting a silicon material; a set sonotrodes underneath said heated melting pot for producing a sonic field; a capillary tube between said heated melting pot and said sonic field, wherein said capillary tube is provided with a heating means, and the silicon melt is fed into the ultrasonic field through said capillary tube; a heat shield heat-insulating said capillary tube from said ultrasonic field; and all surfaces coming in contact with the globular grains in said pressurized vessel comprising a non-contaminating material. 27. A device according to claim 26, wherein said ultrasonic field is generated by at least two sonotrodes being arranged at a minimum distance of nine field nodes between each other.28. A device according to claim 26, wherein said capillary tube has a maximum distance of 50 mm from one yield node of said ultrasonic field.29. A device according to claim 26, wherein the distance from the walls of said pressurized vessel to an atomisation zone for atomizing said silicon melt is chosen so that the globular grains are completely solidified before the globular grains hit said walls.30. A device according to claim 26, wherein at least one of graphite, silicon carbide and quartz glass are used as said non-contaminating material.31. A device according to claim 26, wherein the silicon is fed into said heated melting pot via a solid matter valve.32. A device according to claim 26, wherein the bottom of said pressurized vessel is provided with a discharge means for discharging the high-purity silicon.33. A device according to claim 32, wherein a cellular wheel sluice is provided as said discharge means.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (18)
Karlsson Stig A. (Tierp SEX), Apparatus for powder manufacture by atomizing a molten material.
Bauckhage Klaus (Bremen DEX) Kunert Norbert (Bremen DEX) Schreckenberg Peter (Bremen DEX) Vetters Hermann (Bremen DEX), Apparatus for pulverizing at least one jet of molten metal.
Shibuya Munehiro,JPX ; Kitagawa Masatoshi,JPX ; Mukai Yuji,JPX ; Hirao Takashi,JPX ; Yoshida Akihisa,JPX, Method for forming silicon film and silicon film forming apparatus.
Handyside Timothy M. (Newcastle upon Tyne GB2) Morgan Andrew R. (Tyne & Wear GB2), Powder coating compositions and process for the manufacture thereof.
Levendis Yiannis A. (Boston MA) Panagiotou Thomai (Brookline MA) Flagan Richard (La Crescenta CA), Production of polymer particles in powder form using an atomization technique.
Kenney George B. (131 Green St. Medfield MA 02052) Ashdown Charles P. (85 Wachusett Ave. Arlington MA 02174), Tandem atomization method for ultra-fine metal powder.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.