$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Apparatus and a method for forming an alloy layer over a substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • H01L-021/768
출원번호 US-0628949 (2003-07-28)
발명자 / 주소
  • Gavish, Ilan
출원인 / 주소
  • Intel Corporation
대리인 / 주소
    Blakely, Sokoloff, Taylor &
인용정보 피인용 횟수 : 0  인용 특허 : 37

초록

One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamber in which a focused ion beam contacts the t

대표청구항

1. A system comprising:a chamber configured to house a substrate for processing; an energy source coupled to the chamber; a system controller configured to control the introduction of at least two metal constituents to a focused ion beam and to control the introduction of the focused ion beam; and a

이 특허에 인용된 특허 (37)

  1. Gavish, Ilan, Apparatus and a method for forming an alloy layer over a substrate using an ion beam.
  2. Hamamura Yuuichi (Yokohama JPX) Haraichi Satoshi (Tsukuba JPX) Shimase Akira (Yokohama JPX) Azuma Junzou (Yokohama JPX) Itoh Fumikazu (Fujisawa JPX) Yamada Toshio (Hamura JPX) Koizumi Yasuhiro (Sayam, Apparatus for processing a sample using a charged beam and reactive gases.
  3. Guo Ted ; Chen Liang ; Chen Fusen ; Mosely Roderick C., Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer.
  4. Unvala Bhikhu A. (London GBX), Chemical vapor deposition.
  5. Harriott Lloyd R. (Somerville NJ) Panish Morton B. (Springfield NJ) Temkin Henryk (Berkeley Heights NJ) Wang Yuh-Lin (North Plainfield NJ), Device fabrication.
  6. Marsh, Eugene P., Devices containing platinum-iridium films and methods of preparing such films and devices.
  7. Drummond Timothy (Ann Arbor MI) Ginley David (Albuquerque NM), Direct write with microelectronic circuit fabrication.
  8. Marsh Eugene P., Direct writing of low carbon conductive material.
  9. Ilan Gavish IL; Yuval Greenzweig IL, Focused ion beam metal deposition.
  10. Lee Seaung Suk,KRX ; Kim Ho Gi,KRX ; Kim Jong Choul,KRX ; Choi Soo Han,KRX, Hot-wall CVD method for forming a ferroelectric film.
  11. Ximen Hongyu (San Jose CA) Cecere Michael A. (San Jose CA) Masnaghetti Douglas (San Jose CA), Insulator deposition using focused ion beam.
  12. Tao Tao (Somerville MA) Melngailis John (Newton MA), Ion beam induced deposition of metals.
  13. Freitag Douglas W. (Brookeville MD) Beaman Joseph J. (Austin TX) Bourell David L. (Austin TX), Laser-directed fabrication of full-density metal articles using hot isostatic processing.
  14. Jun Hai Liu ; Bor Zeng Jang, Layer manufacturing using electrostatic imaging and lamination.
  15. Reetz Manfred T.,DEX ; Winter Martin,DEX ; Dumpich Gunter,DEX ; Lohau Jens,DEX, Lithographical process for production of nanostructures on surfaces.
  16. Versteeg Vera A. (Rochester NY) Avedisian C. Thomas (Ithaca NY) Raj Rishi (Ithaca NY), Method and apparatus for CVD using liquid delivery system with an ultrasonic nozzle.
  17. Murakami Shingo,JPX, Method and apparatus for film formation by chemical vapor deposition.
  18. Shuman Richard F. ; Noll Kathryn ; Casey ; Jr. J. David, Method and apparatus for milling copper interconnects in a charged particle beam system.
  19. Uesugi Fumihiko (Tokyo JPX) Morishige Yukio (Tokyo JPX), Method and apparatus for writing a line on a patterned substrate.
  20. Hongo Mikio (Yokohama JPX) Mizukoshi Katsuro (Yokohama JPX) Sano Shyuzo (Yokohama JPX) Kamimura Takashi (Yokohama JPX) Takahashi Takahiko (Iruma JPX), Method for modifying wiring of semiconductor device.
  21. Morimoto Hiroaki (Hyogo JPX) Onoda Hiroshi (Hyogo JPX) Nishioka Tadashi (Hyogo JPX), Method for repairing a pattern.
  22. Okada Kenji (Suita JPX) Terui Yasuaki (Neyagawa JPX) Yasui Juro (Toyonaka JPX) Hirai Yoshihiko (Osaka JPX) Niwa Masaaki (Hirakata JPX) Wada Atsuo (Suita JPX) Morimoto Kiyoshi (Neyagawa JPX), Method of fabricating a quantum device.
  23. Kawasaki Minoru (Toyota JPX) Takagi Soya (Toyota JPX) Kato Shinji (Aichi JPX) Mori Kazuhiko (Toyota JPX) Kotetsu Yasuo (Kariya JPX), Method of forming weld bead of pure copper on ferroalloy base material.
  24. Yamaguchi Hiroshi (Fujisawa JPX) Saito Keiya (Yokohama JPX) Itoh Fumikazu (Fujisawa JPX) Ishida Koji (Musashino JPX) Sakano Shinji (Hachiouji JPX) Tamura Masao (Tokorozawa JPX) Shukuri Shoji (Koganei, Method of manufacturing devices having superlattice structures.
  25. Marcus Harris L. (Austin TX) Lakshminarayan Udaykumar (Austin TX) Bourell David L. (Austin TX), Method of producing parts by selective beam interaction of powder with gas phase reactant.
  26. Hongo Mikio (Yokohama JPX) Mizukoshi Katsuro (Yokohama JPX) Sano Shuzo (Yokohama JPX) Kamimura Takashi (Yokohama JPX) Itoh Fumikazu (Fujisawa JPX) Shimase Akira (Yokohama JPX) Haraichi Satoshi (Yokoh, Method of providing a semiconductor IC device with an additional conduction path.
  27. Kaloyeros, Alain E.; Knorr, Andres; Faltermeier, Jonathan, Methodology for in-situ doping of aluminum coatings.
  28. Ohnishi Tsuyoshi (Kokubunji JPX) Kawanami Yoshimi (Fuchu JPX) Madokoro Yuuichi (Kokubunji JPX) Umemura Kaoru (Kokubunji JPX) Ishitani Tohru (Sayama JPX), Methods for device transplantation.
  29. Azuma Junzou,JPX ; Shimase Akira,JPX ; Hamamura Yuichi,JPX ; Koike Hidemi,JPX, Pattern forming method using charged particle beam process and charged particle beam processing system.
  30. Nishioka Tadashi (Itami JPX) Mashiko Yoji (Itami JPX) Morimoto Hiroaki (Itami JPX) Koyama Hiroshi (Itami JPX), Process for forming electrodes for semiconductor devices using focused ion beam deposition.
  31. Nishioka Tadashi (Itami JPX) Mashiko Yoji (Itami JPX) Morimoto Hiroaki (Itami JPX) Koyama Hiroshi (Itami JPX), Process for forming electrodes for semiconductor devices using focused ion beams.
  32. Kaito Takashi (Tokyo JPX) Adachi Tatsuya (Tokyo JPX), Process for forming metallic patterned film.
  33. Kanai Masahiro (Tokyo JPX) Hanna Junichi (Tokyo JPX) Shimizu Isamu (Tokyo JPX), Process for preparing Si or Ge epitaxial film using fluorine oxidant.
  34. Sakurai Junji (Tokyo JPX), Process for producing a three-dimensional semiconductor device.
  35. Kubena Randall L. (Canoga Park CA) Mayer Thomas M. (Chapel Hill NC), Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams.
  36. Takahashi Takahiko (Tokyo JPX) Itoh Funikazu (Fujisawa JPX) Shimase Akira (Yokohama JPX) Yamaguchi HIroshi (Fujisawa JPX) Hongo Mikio (Yokohama JPX) Haraichi Satoshi (Yokohama JPX), Semiconductor integrated circuit device and process for producing the same.
  37. Gavish Ilan (Karmiel ILX), Tungsten-based cemented carbide powder mix and cemented carbide products made therefrom.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로