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A method, system and materials for use in hydrogen gettering in conjunction with microelectronic and microwave components that are generally hermetically sealed in an enclosure typically referred to as a “package”. Gettering materials that can be used include titanium with or without a hydrogen perm

A method, system and materials for use in hydrogen gettering in conjunction with microelectronic and microwave components that are generally hermetically sealed in an enclosure typically referred to as a “package”. Gettering materials that can be used include titanium with or without a hydrogen permeable coating or covering, alloys of zirconium-vanadium iron and zeolites and several ways to apply these materials to the package. In addition, the hydrogen permeable material can be used over a vent from the interior of the package to the exterior wherein hydrogen will escape from the package interior when the hydrogen concentration within the package is greater than without the package.

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1. A method of making a package containing a substantially hydrogen-free interior which comprises the steps of:(a) providing a hermetically sealed package having a hollow interior region;(b) providing a hydrogen degradable semiconductor device material within said hollow interior;(c) forming a hydro

1. A method of making a package containing a substantially hydrogen-free interior which comprises the steps of:(a) providing a hermetically sealed package having a hollow interior region;(b) providing a hydrogen degradable semiconductor device material within said hollow interior;(c) forming a hydrogen permeable layer onto a surface of said package;(d) then forming a vent through said package from said hollow interior region to the exterior of said package through said layer to form a hydrogen permeable layer over said vent.2. The method of claim 1 wherein said hydrogen permeable layer is a layer of palladium.3. The method of claim 1 wherein said device is a gallium arsenide semiconductor.4. The method of claim 2 wherein said device is a gallium arsenide semiconductor.5. The method of claim 4 further including the step of placing said package in an environment where the concentration of hydrogen is less than the concentration of hydrogen in said hollow region.6. The method of claim 1 wherein said hydrogen permeable layer is formed by plating.7. The method of claim 1 wherein said step of forming a vent in said package is provided by etching said package.8. The method of claim 2 wherein said hydrogen permeable layer is formed by plating.9. The method of claim 2 wherein said step of forming a vent in said package is provided by etching said package.10. The method of claim 3 wherein said hydrogen permeable layer is formed by plating.11. The method of claim 3 wherein said step of forming a vent in said package is provided by etching said package.12. The method of claim 4 wherein said hydrogen permeable layer is formed by plating.13. The method of claim 4 wherein said step of forming a vent in said package is provided by etching said package.14. The method of claim 5 wherein said hydrogen permeable layer is formed by plating.15. The method of claim 5 wherein said step of forming a vent in said package is provided by etching said package.