초록 ▼

Structure and method for fabrication of a leadless chip carrier have been disclosed. A disclosed embodiment comprises a substrate having a top surface for receiving a semiconductor die. The disclosed embodiment also comprises a printed circuit board attached to a bottom surface of the substrate. The

Structure and method for fabrication of a leadless chip carrier have been disclosed. A disclosed embodiment comprises a substrate having a top surface for receiving a semiconductor die. The disclosed embodiment also comprises a printed circuit board attached to a bottom surface of the substrate. The disclosed embodiment further comprises at least one via in the substrate, which provides an electrical connection between a signal bond pad of the semiconductor die and the printed circuit board. The at least one via also electrically connects a substrate bond pad and the printed circuit board. The substrate bond pad is further connected to the signal bond pad of the semiconductor die by a signal bonding wire. The at least one via further provides an electrical connection between the signal bond pad of the semiconductor die and a land that is electrically connected to the printed circuit board.

대표청구항 ▼

1. A structure comprising:a substrate having a top surface for receiving a die;a printed circuit board attached to a bottom surface of said substrate;a support pad attached to said top surface of said substrate, said support pad being coupled to a ground bond pad of said die by a down bonding wire,

1. A structure comprising:a substrate having a top surface for receiving a die;a printed circuit board attached to a bottom surface of said substrate;a support pad attached to said top surface of said substrate, said support pad being coupled to a ground bond pad of said die by a down bonding wire, said die being mounted on said support pad;at least one via in said substrate;said at least one via providing an electrical connection between a signal bond pad of said die and said printed circuit board.2. The structure of claim 1 wherein said die is a semiconductor die.3. The structure of claim 1 wherein said substrate comprises organic material.4. The structure of claim 3 wherein said organic material is selected from the group consisting of polytetrafluoroethylene material and an FR4 based laminate material.5. The structure of claim 1 wherein said substrate comprises a ceramic material.6. The structure of claim 1 wherein said at least one via provides an electrical connection between a substrate bond pad and said printed circuit board, wherein said substrate bond pad is electrically connected to said signal bond pad of said die.7. The structure of claim 6 wherein said at least one via abuts said substrate bond pad.8. The structure of claim 6 wherein said substrate bond pad is electrically connected to said signal bond pad of said die by a signal bonding wire.9. The structure of claim 1 wherein said at least one via provides an electrical connection between said signal bond pad of said die and a land, said land being electrically connected to said printed circuit board.10. The structure of claim 9 wherein said at least one via abuts said land.11. The structure of claim 1 wherein said at least one via provides an electrical connection between a substrate bond pad and a land, wherein said substrate bond pad is electrically connected to said signal bond pad of said die, and wherein said land is electrically connected to said printed circuit board.12. The structure of claim 11 wherein said at least one via abuts said substrate bond pad and said land.13. The structure of claim 11 wherein said substrate bond pad is electrically connected to said signal bond pad of said die by a signal bonding wire.14. The structure of claim 12 wherein said substrate bond pad is electrically connected to said signal bond pad of said die pad by a signal bonding wire.15. The structure of claim 1 wherein said at least one via comprises copper.16. The structure of claim 1 wherein said at least one via comprises a thermally conductive material.17. A structure comprising:a substrate having a top surface and a bottom surface;a semiconductor die attached to said top surface of said substrate;a heat spreader attached to said bottom surface of said substrate;a support pad attached to said top surface of said substrate, said support pad being connected to said heat spreader;a first via in said substrate;said first via providing a connection between said semiconductor die and said heat spreader, wherein said heat spreader is an electrical conductor, wherein said structure further comprises a substrate down bond area attached to said top surface of said substrate, and wherein said first via provides an electrical connection between said substrate down bond area and said heat spreader.18. The structure of claim 17 wherein a semiconductor die ground bond pad on said semiconductor die is electrically connected to said substrate down bond area by a down bonding wire.19. A structure comprising:a substrate having a top surface and a bottom surface;a semiconductor die attached to said top surface of said substrate;a heat spreader attached to said bottom surface of said substrate;a support pad attached to said top surface of said substrate, said support pad being connected to said heat spreader;a first via in said substrate;said first via providing a connection between said semiconductor die and said heat spreader, said first via further providing an electrical connection between said semiconductor die and said heat spreader.